Single FETs, MOSFETs
SOT 23 Package N Channel Enhancement Mode Field Effect Transistor JSCJ CJ3400 for High Density Cells
Product OverviewThe CJ3400 is an N-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for high-density cell applications. It offers extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability, making it suitable for various electronic applications.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDProduct Code: CJ3400Package: SOT-23Encapsulation: PlasticOrigin:
Dual channel MOSFET JSCJ CJ3439KDW with low logic level gate drive and surface mount SOT 363 package
Product OverviewThe CJ3439KDW is a SOT-363 plastic-encapsulated MOSFET featuring a surface mount package, low RDS(on), and operation at low logic level gate drive. It includes both N-channel (CJ3134K) and P-channel (CJ3139K) MOSFETs independently within a single package. This device is ESD protected at the gate and is suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifting.Product AttributesBr
Low RDS ON N Channel MOSFET JSCJ CJAC2R0SN04C with High Energy Pulse Capability and Heat Dissipation
Product OverviewThe CJAC2R0SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology minimizes on-state resistance, offers superior switching performance, and withstands high energy pulses in avalanche and commutation modes. It is well-suited for high efficiency fast switching applications such as battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and
Low gate charge N Channel MOSFET JSCJ CJ2310 suitable for battery protection and switching circuits
Product OverviewThe CJ2310 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, featuring high power and current handling capability and a lead-free product option. It is available in a surface mount SOT-23 package.Product AttributesBran
N Channel Power MOSFET JSCJ CJU50N06A with Low Reverse Transfer Capacitance and Avalanche Energy Rating
Product OverviewThe CJU50N06A is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include an excellent package for good heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDModel:
Load switch and uninterruptible power supply P Channel MOSFET JSCJ CJAC70P06 with high density cell design
Product OverviewThe CJAC70P06 is a P-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It offers a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent thermal dissipation, and special process technology for high ESD capability. Ideal for battery switches, load switches, uninterruptible power supplies, SMPS, general purpose
Dual N Channel MOSFET JSCJ CJ8820 Offering Excellent RDS ON and Thermal Stability for Power Electronics
Product OverviewThe CJ8820 is a Dual N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with ESD protection. Its common-drain configuration makes it suitable for uni-directional or bi-directional load switch applications.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-23Material: Plastic-EncapsulateTechnical SpecificationsParame
Load Switching P Channel Enhancement Mode Transistor JSCJ CJ3401A with Plastic Encapsulation Package
Product OverviewThe CJ3401A is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for high-density cell applications. It offers extremely low RDS(ON) and exceptional on-resistance, making it suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-23Material: Plastic-EncapsulateOrigin: China (implied by
High Stability N Channel Power MOSFET JSCJ CJAB30N02 with Fully Characterized Avalanche Voltage and Current
Product OverviewThe CJAB30N02 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully
Fast Switching N Channel MOSFET JSCJ CJ3134KW for in Drivers of Relays Solenoids and Power Supplies
Product OverviewThe CJ3134KW is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It is designed for high-side switching applications, offering low on-resistance, low threshold voltage, and fast switching speeds. This MOSFET is suitable for use in drivers for relays and solenoids, battery-operated systems, power supply converter circuits, and load/power switching in devices like cell phones, pagers, lamps, hammers, displays, and memories.Product
N Channel Power MOSFET JSCJ CJQ4410 featuring trench technology and excellent shoot through immunity
Product OverviewThe CJQ4410 is an N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON), shoot-through immunity, superior body diode characteristics, and ultra-low gate resistance. This device is ideal for low-side switching applications in Notebook CPU core power conversion, battery switches, and load switches.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,
TSSOP8 Package Plastic Encapsulate Dual N Channel MOSFET JSCJ CJS2019 for Surface Mount Applications
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET Product Overview: This TSSOP8 Plastic-Encapsulate MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD is a dual N-Channel MOSFET featuring TrenchFET technology for excellent RDS(on) and low gate charge. It offers high power and current handling capabilities, making it suitable for surface mount applications. Key advantages include its robust design for battery
Low Gate Charge P Channel MOSFET JSCJ CJU40P03 Suitable for Battery Powered and Notebook Applications
Product OverviewThe CJU40P03 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers, portable equipment, and battery-powered systems. Its key features include a reliable and rugged design with a high-density cell for ultra-low on-resistance.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY
Low RDS ON P Channel MOSFET JSCJ CJQ60P05 with Excellent Avalanche Voltage and Current Characteristics
Product OverviewThe CJQ60P05 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The SOP8 package provides good heat dissipation, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and DC-DC converters.Product
High Current Handling N Channel MOSFET JSCJ CJAC40N04 Featuring Low RDS ON and Excellent Heat Dissipation
Product OverviewThe CJAC40N04 from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications requiring high power and current handling capabilities. Its high-density cell design ensures ultra-low RDS(ON), and the lead-free product is acquired. The package provides good heat dissipation, stability, and uniformity with
Power Switching Device JSCJ CJAC80SN10 N Channel Power MOSFET with Low Gate Charge and Fast Switching
CJAC80SN10 N-Channel Power MOSFETThe CJAC80SN10 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include excellent heat dissipation, ultra low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS
Complementary mosfet pair JSCJ CJQ6601 with p channel and n channel offering low rds on in sop8 package
Product OverviewThe CJQ6601 is a complementary MOSFET pair, featuring a P-channel CJ3401 and an N-channel CJ3400, integrated into a single SOP8 package. Utilizing advanced trench technology, these MOSFETs offer excellent RDS(ON) and low gate charge, making them ideal for high-speed power inverter applications. The device is designed for surface mounting and provides a cost-effective solution for various electronic designs.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS
Power MOSFET N Channel JSCJ CJU20N06A Featuring Low Gate Charge and Fast Switching for Power Control
Product OverviewThe CJU20N06A is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology for excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications. Key features include excellent heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.Product AttributesBrand: JIANGSU CHANGJING
High reliability N Channel MOSFET JSCJ CJAE28SN06 with excellent avalanche current and voltage ratings
Product OverviewThe CJAE28SN06 is an N-Channel Power MOSFET utilizing SGT technology and design, offering excellent RDS(ON) with low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The package provides good heat dissipation, making it suitable for a wide variety of applications including battery and loading switching.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,
JSCJ 2N7002 G N Channel MOSFET Featuring High Saturation Current and Low Resistance in SOT 23 Package
Product OverviewThe JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7002 is an N-Channel MOSFET in a SOT-23 package. It features a high-density cell design for low RDS(ON), acting as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, making it suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT
