Single FETs, MOSFETs
power MOSFET Jilin Sino Microelectronics JCS5N50FT 220MF designed for LED and lamp ballast circuits
N-CHANNEL MOSFET JCS5N50T The JCS5N50T is an N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product. Product Attributes Brand: Jilin Sino-microelectronics Co., Ltd Origin: China Certifications: RoHS Technical Specifications Order Codes Marking
High Voltage SiC Power MOSFET HXY MOSFET SCT2080KEC-HXY Suitable for Solar Inverters and Motor Drives
Product OverviewThe SCT2080KEC is a SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. This MOSFET is resistant to latch-up and is Halogen Free and RoHS Compliant, leading to higher system efficiency, reduced cooling requirements, increased power density, and increased system switching frequency. It is suitable for applications
HXY MOSFET TP65H035WS-HXY N Channel Silicon Carbide Transistor with High Power Density and Low Loss
Product OverviewThe HUAXUANYANG HXY TP65H035WS is a 3rd generation SiC Power MOSFET, N-Channel Enhancement Mode, utilizing advanced SiC technology. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. The optimized package features a separate driver source pin, contributing to reduced switching losses, minimized gate ringing, higher system efficiency, reduced cooling
High Blocking Voltage SiC MOSFET HXY MOSFET SCT2080KEGC11 HXY Perfect for Switch Mode Power Supplies
Product OverviewThe SCT2080KEGC11 is a SiC Power MOSFET, N-Channel Enhancement Mode device from HUAXUANYANG ELECTRONICS CO.,LTD. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. This MOSFET is resistant to latch-up and is Halogen Free and RoHS Compliant, leading to higher system efficiency, reduced cooling requirements, increased power density, and increased system switching
N Channel Enhancement Mode MOSFET HXY MOSFET 1N60G Designed for Low Gate Voltage and Power Switching
Product OverviewThe 1N60G is an N-Channel Enhancement Mode MOSFET designed for excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. Its advanced trench technology makes it suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDProduct ID: 1N60GPackage: SOT-223Marking: 1N60GOrigin: Shenzhen, ChinaTechnical SpecificationsParameterConditionsMin.Typ.Max.UnitVDSDrain-Source Voltage600
Low gate charge N Channel MOSFET IPS FTP03N06NA suitable for high power switching and RoHS compliant
Product Overview The FTP03N06NA is an N-Channel MOSFET from InPower Semiconductor Co., Ltd. (IPS) designed for applications such as adaptors, chargers, and SMPS. It features low ON resistance, low gate charge, and is RoHS compliant. This MOSFET offers a continuous drain current of 230A at 25 and 60V Drain-to-Source Voltage, making it suitable for high-power switching applications. Product Attributes Brand: IPS (InPower Semiconductor Co., Ltd.) Product Line: FTP Model:
SiC MOSFET 650 Volt 123 Amp N Channel HXY MOSFET NVHL040N65S3F-HXY Enhancement Mode Device
Product OverviewThe HUAXUANYANG HXY NVHL040N65S3F is a 3rd generation SiC Power MOSFET, N-Channel Enhancement Mode device featuring optimized package design with a separate driver source pin. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This RoHS compliant and halogen-free component is designed to reduce switching losses, minimize gate ringing, improve system
Low gate charge N channel MOSFET Jilin Sino Microelectronics JCS650C 220C for power supply switching and UPS
Product OverviewThe JCS650 is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.Product AttributesBrand: Jilin Sino-microelectronics Co., LtdCertifications: RoHSTechnical SpecificationsModelPackageOrder CodesMarkingMain CharacteristicsApplications
N Channel Enhancement Mode HXY MOSFET SI2318 with Low Gate Charge and Excellent On State Resistance
Product OverviewThe SI2318 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent On-State Resistance (RDS(ON)) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICSOrigin: Shenzhen, ChinaModel: SI2318Package: SOT-23Marking: 2318Website: www.hxymos.comTechnical SpecificationsSymbolPar
Power MOSFET HXY MOSFET HXY30N06DF N Channel Enhancement Mode with Low Gate Voltage and On Resistance
Product OverviewThe HXY30N06DF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: DFN3X3-8LTechnical SpecificationsParameterSymbolConditionMin.Typ.Max.UnitsDrain-Source Breakdown VoltageV(BR
Jilin Sino Microelectronics JCS640C MOSFET designed for switching in electronic lamp ballasts and UPS
Product Overview The JCS640 is an N-channel enhancement mode MOSFET designed for high-efficiency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant. Product Attributes Brand: Jilin Sino-microelectronics Co., Ltd. Certifications: RoHS Technical Specifications Order Code Package Marking ID (A) VDSS (V) Rds(on)-max (@Vgs=10V) (Ω)
Power MOSFET HXY MOSFET AOD4184A HXY N Channel Enhancement Mode with 40V Drain Source Voltage Rating
Product OverviewThe AOD4184A is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.Product AttributesBrand: HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDWebsite: www.hxymos.comTechnical SpecificationsSymbolParameterConditionMinTypMaxUnitAbsolute Maximum Ratings (TC=25C
N Channel Enhancement Mode SiC MOSFET HXY MOSFET SCT3017ALHRC11-HXY 3rd Generation Power Transistor
Product OverviewThe SCT3017ALHRC11 is a 3rd Generation SiC Power MOSFET with N-Channel Enhancement Mode. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. These features contribute to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequency. It is halogen-free and RoHS compliant.Product AttributesBrand:
HXY MOSFET IPG20N06S4L 26 HXY Dual N Channel MOSFET with excellent avalanche ruggedness and low RDS
Product OverviewThe IPG20N06S4L-26 is a Dual N-Channel MOSFET utilizing advanced SGT MOSFET technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, specifically designed for enhanced ruggedness. This device is suitable for applications in consumer electronic power supplies, motor control, and synchronous-rectification circuits.Product AttributesBrand: HXY (HUAXUANYANG ELECTRONICS CO.,LTD)Origin: Shenzhen, ChinaProduct ID:
Low Gate Voltage N Channel MOSFET HXY MOSFET AO3400 HXY Suitable for Battery Protection Applications
Product OverviewThe AO3400-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUA XUAN YANG ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDProduct ID: AO3400-HXYPackage: SOT-23Marking: A09TQuantity: 3000 PCSTechnical Specificat
HXY MOSFET AOD442 HXY Featuring Low RDS ON and Gate Voltage Operation Starting at 4.5V for Switching
Product OverviewThe AOD442-HXY is an N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and general switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICSOrigin: Shenzhen, ChinaModel: AOD442-HXYPackage: TO-252-2L (TO-252-2(DPAK))Marking: 50N06 XXXX YYYYOrdering Information:
Switching Solutions with HXY MOSFET AOD4185 P Channel Enhancement Mode and Low Gate Charge Characteristics
Product OverviewThe AOD4185 is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS (HXY). It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTD (HXY)Product ID: AOD4185Origin: Shenzhen, ChinaPackage: TO-252(DPAK) / TO252
P Channel MOSFET HXY MOSFET SI2319 ideal for high frequency circuits and power switching performance
Product OverviewThe SI2319 is a P-Channel Enhancement Mode MOSFET designed for excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications including power switching, hard switched and high frequency circuits, and DC-DC converters.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDProduct ID: SI2319Package Marking: 2319 AOrigin: Shenzhen, ChinaWebsite: www.hxymos.comTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitGeneral
Huixin BC3407 P Channel Enhancement Mode Transistor Designed for Load Switching and PWM Applications
Product OverviewThe BC3407 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.Product AttributesMarking: 3407Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMaximum RatingsDrain-Source VoltageVDS-30VGate-Source VoltageVGS±20VContinuous Drain CurrentID-4.1APower DissipationPD350mWThermal Resistance from Junction
Dual N P Channel Enhancement Mode HXY MOSFET FDS4559 HXY with Low Gate Charge and 60V Voltage Rating
FDS4559-HXY Dual N+P-Channel Enhancement Mode MOSFET The FDS4559-HXY utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This dual N+P-Channel MOSFET is suitable for battery protection and various switching applications, including wireless charging and brushless motor drivers. Product Attributes Brand: HUAXUANYANG ELECTRONICS Origin: Shenzhen HuaXuanYang Electronics CO.,LTD Product ID:
