Single FETs, MOSFETs

Product OverviewThe H15N10D is a single N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, hard switching and high-speed circuits, power tools, UPS, and motor control applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not

Product OverviewThe AOD403-HXY is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDModel: AOD403-HXYPackage: TO-252-2L (TO-252-2(DPAK))Website: www.hxymos

Product OverviewThe H10N65F is a 650V N-Channel MOSFET designed for high-efficiency power applications. It features fast switching speeds, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.Product AttributesBrand: H (implied by product code H10N65F)Origin: China (implied by +86 phone prefix)Certifications: Lead FreeTechni

Product OverviewThe BSC097N06NS is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICSProduct ID: BSC097N06NSMarking: 097N06NSWebsite: www.hxymos.comOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDTechnical SpecificationsParameterSymbolTes

Product OverviewThe SI1032R-T1-GE3 is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It features advanced trench technology, offering excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: SOT-523(SC-75A)Marking: SI1032R-T1-GE3Technical Specificati

Product OverviewThe H15N65D is an N-Channel Super Junction Power MOSFET featuring new technology for high voltage devices. It offers low on-resistance, low conduction losses, and a small package with ultra-low gate charge for reduced driving requirements. This device is 100% avalanche tested and ROHS compliant, making it suitable for applications such as Power Factor Correction (PFC), Switched Mode Power Supplies (SMPS), and Uninterruptible Power Supplies (UPS).Product

Product OverviewThe IRFR024NT is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDOrigin: Shenzhen, ChinaPackage: TO-252-2(DPAK)Marking: 30N06XXXXTechnical SpecificationsSymbolParameterRatingUnitsConditionsMin.Typ.Max

Product Overview The RU20P7C is a P-Channel Advanced Power MOSFET designed for efficient load switching and power management applications. It features a super high-density cell design, offering low On-Resistance of 20m (Typ.) at VGS=-4.5V and 30m (Typ.) at VGS=-2.5V. This MOSFET is reliable, rugged, and available in lead-free and green devices (RoHS Compliant). It is suitable for battery protection and general power management circuits. Product Attributes Brand: Ruichips

Product OverviewThe IRFR5305TRPBF is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, offering advantages like high power dissipation and a wide operating temperature range.Product AttributesBrand: HUAXUANYANG ELECTRONICSProduct ID: IRFR5305TRPBFP

Product OverviewThe MMBT7002 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON) and high saturation current capability. It is suitable for voltage-controlled small signal switching and high-speed switching applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: PlasticColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinMaxUnitD

Product OverviewThe JS65R170M is a N-channel enhancement mode field-effect transistor designed for high-frequency switching applications. It features low gate charge, low Crss, fast switching speed, and improved dv/dt capability. The product is 100% avalanche tested and RoHS compliant. Applications include high frequency switching mode power supplies, electronic ballasts, and LED power supplies.Product AttributesBrand: Jilin Sino-microelectronics Co., LtdCertifications:

SiC Power MOSFET N-Channel Enhancement Mode The HUAXUANYANG HXY HC3M0045065D is a 3rd generation SiC Power MOSFET featuring an N-Channel Enhancement Mode design. It utilizes optimized package with a separate driver source pin for enhanced performance. This MOSFET offers high blocking voltage with low on-resistance and high-speed switching with low capacitances. Its fast intrinsic diode with low reverse recovery (Qrr) contributes to reduced switching losses and minimized gate

Product OverviewThe JCS2N60C is a high-performance N-channel MOSFET designed for high efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss (typical 3.1pF), fast switching speed, 100% avalanche tested, and improved dv/dt capability, all while being RoHS compliant.Product AttributesBrand: JCSCertifications: RoHSTechnical SpecificationsOrder CodesMarkingPackageID (A)VDSS (V)Rdson-max () (Vgs=10V)Qg-typ (nC

HOOYI HY12P03S P-Channel Enhancement Mode MOSFET The HOOYI HY12P03S is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers a reliable and rugged solution with features such as low on-state resistance and avalanche rating. Available in a SOP-8 package, this device is lead-free and RoHS compliant. Product Attributes Brand: HOOYI Product Code: HY12P03S Package: SOP-8 Certifications: RoHS Compliant, Lead Free

Product OverviewThe IRLZ44NPBF is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for high-efficiency switch-mode power supplies and power factor correction applications. It is also applicable in electronic lamp ballasts.Product AttributesBrand: HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: TO-220 (TO-220AB)Quantity

Product OverviewThe 5N10-HXY N-Channel MOSFET utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICSOrigin: Shenzhen, ChinaModel: 5N10-HXYPackage: SOT-23Marking: MA6Certifications: None specifiedTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitVDSDrain

Product OverviewThe HYG032N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features a high continuous drain current of 180A and a low on-state resistance of 3 m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant).Product AttributesBrand: HYMOrigin: China (Huayi Microelectronics Co.,

Product OverviewThe JCS50N20T is a high-performance N-channel MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speeds, 100% avalanche tested, and improved dv/dt capability. This RoHS-compliant product is available in TO-247 and TO-3PB packages.Product AttributesBrand: JCSCertifications: RoHSTechnical SpecificationsOrder CodeMarkingPackageID (A)VDSS (V)Rds(on)-max (@Vgs

Product DescriptionThe IRFP450 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible using gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications.General FeaturesAdvanced trench technologyExcellent RDS(ON)Low gate chargeOperation with gate voltages as low as 4.5VApplicationsBattery protectionLoad switchUninterruptible power

Product OverviewThe HYG032N03LR1C1 is a single N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It features a low on-resistance (RDS(ON)) of 3.3m at VGS=10V and 4.3m at VGS=4.5V, 100% avalanche tested, and a reliable, rugged construction. This device is available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYM (Hymexa)Origin: China (Huayi Microelectronics Co., Ltd.)Certifications: RoHS Compliant,