Single FETs, MOSFETs
Power MOSFET HUAYI HYG065P03LQ1C2 featuring P Channel enhancement mode and avalanche tested rugged design
Product OverviewThe HYG065P03LQ1C2 is a single P-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a high continuous drain current of -70A and a low on-resistance of 5.9m (typ.) at VGS = -10V. This device is 100% avalanche tested, ...
Low on resistance N Channel MOSFET HUAYI HYG068N08NR1P ideal for power management and inverter systems
Product OverviewThe HYG068N08NR1P is an N-Channel Enhancement Mode MOSFET designed for power management applications. It features high performance with low on-resistance (RDS(ON)= 6m typ. @ VGS = 10V), 100% avalanche tested for reliability, and is available in lead-free (RoHS Compliant) devices. ...
High Blocking Voltage Silicon Carbide MOSFET HXY MOSFET AIMW120R035M1HXKSA1-HXY for Power Conversion
Product OverviewThe AIMW120R035M1HXKSA1 is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET offers higher ...
Power Switching MOSFET HUAYI HYG170ND03LA1C1 Featuring 30V VDSS and Halogen Free RoHS Compliant Package
Product OverviewThe HYG170ND03LA1C1 is a Dual N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V drain-source voltage and a continuous drain current of 24A, with low on-resistance of 15.6 m (typ) at VGS=10V and 20.5 m (typ) ...
HXY MOSFET CSD17577Q3A HXY N Channel MOSFET with 30V Drain Source Voltage and 60A continuous current
Product OverviewThe CSD17577Q3A is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product ...
N Channel MOSFET HUAYI HYG080N10LS1D 100V 62A Low On Resistance Suitable for High Frequency Circuits
HYG080N10LS1D Single N-Channel Enhancement Mode MOSFETThe HYG080N10LS1D is a high-performance, single N-channel enhancement mode MOSFET designed for demanding applications. It features a 100V/62A rating, low on-state resistance (RDS(ON) of 7.6m typ. @ VGS=10V), and 100% avalanche tested for ...
N Channel Enhancement Mode MOSFET HUAYI HYG030N03LQ1B Featuring Low On Resistance and 30 Volt Rating
HYG030N03LQ1P/B N-Channel Enhancement Mode MOSFETThe HYG030N03LQ1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications. It offers a 30V/100A rating with low on-resistance (RDS(ON) = 2.8m typ. @ VGS = 10V, 3.8m typ. @ VGS = 4.5V). This device is 100% ...
40V Complementary MOSFET HUAYI HYG190C04LA1S Featuring SOP8L Package and Avalanche Tested Performance
HYG190C04LA1S Complementary MOSFETThe HYG190C04LA1S is a 40V complementary MOSFET designed for high-performance applications. It offers reliable and rugged operation with 100% avalanche testing. Available in SOP8L package, this device is RoHS compliant and halogen-free.Product AttributesBrand: HYG ...
High Current N Channel MOSFET HUAYI HY050N08P 85V 105A for Switch Applications and DC DC Converters
Product OverviewThe HUAYI HY050N08P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It features an 85V/105A rating, low on-resistance (RDS(ON)= 4.7m typ.), 100% avalanche tested, and a reliable, rugged construction. Lead-free and green ...
Switching Device HXY MOSFET 2N7002T N Channel Enhancement Mode with Low On Resistance and Gate Charge
Product OverviewThe 2N7002T is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG (HXY) that utilizes advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and general switching ...
Power Conversion Solutions Featuring HXY MOSFET HC3M0015065K SiC N Channel Enhancement Mode Device
HC3M0015065K SiC Power MOSFETThe HC3M0015065K is a 3rd generation SiC MOSFET featuring an N-Channel Enhancement Mode design. Optimized for high-efficiency power conversion, it offers high blocking voltage with low on-resistance and high-speed switching capabilities. Its advanced technology reduces ...
Low On Resistance P Channel MOSFET HUAYI HYG120P06LR1C2 Designed for Switching and Battery Management
Product OverviewThe HYG120P06LR1C2 is a P-Channel Enhancement Mode MOSFET designed for switching applications and battery management. It features a low on-state resistance (RDS(ON)) of 11 m (typ.) at VGS = -10V and 15.5 m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, rugged, ...
N Channel Enhancement Mode MOSFET HYG063N09NS1P with 90V 120A and Low On Resistance Avalanche Tested
Product OverviewThe HYG063N09NS1P is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high current capability of 90V/120A with a low on-resistance of 5.5 m (typ.) at VGS = 10V. This device is 100% avalanche tested, ...
Power MOSFET Huixin H11N70D N Channel 700V 11A Low On Resistance TO 252 Package
Product OverviewThe H11N70D is an N-Channel Power MOSFET featuring new technology for high voltage applications. It offers low on-resistance, low conduction losses, and ultra-low gate charge for reduced driving requirements. This device is 100% avalanche tested and comes in a small TO-252 package...
Voltage Regulation and Power Switching Semiconductor Components HUAYI HY3003D with TO252 TO251 Packages
Product OverviewThis document details various semiconductor packages including TO-252-2L, TO-251-3L, and TO-251-3S. It provides a comprehensive overview of their characteristics, including pin configurations, electrical parameters, and application guidelines. The content is intended for technical ...
650V GaN on Silicon Power Transistor HXY MOSFET HIGLD60R190D1 with RoHS Pb Free and REACH Compliance
HIGLD60R190D1 650V GaN-on-Silicon Enhancement-mode Power TransistorThe HIGLD60R190D1 is a 650V GaN-on-Silicon enhancement-mode power transistor in an 8mm x 8mm Dual Flat No-lead (DFN) package. Designed as a normally-OFF power switch, it offers ultra-high switching frequency, no reverse-recovery ...
Dual N Channel Enhancement Mode MOSFET Huixin MMBT7002DW with Low RDS ON and High Saturation Current
MMBT7002DW Dual N-Channel Enhancement Mode MOSFETThe MMBT7002DW is a high-density cell design Dual N-Channel Enhancement Mode MOSFET offering low RDS(ON), voltage-controlled small signal switching, high saturation current capability, and high-speed switching. It is designed for various electronic ...
N Channel Enhancement Mode MOSFET HUAYI HY1803C2 with 2.4 Milliohm On Resistance and 80A Drain Current
Product OverviewThe HY1803C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It features a low on-resistance (RDS(ON)) of 2.4m at VGS = 10V and 2.8m at VGS = 4.5V, along with a high continuous drain current capability of 80A. This device is 100% ...
Switching MOSFET HUAYI HYG035N08NS2C2 N Channel Enhancement Mode with RoHS and Halogen Free Material
Product OverviewThe HYG035N08NS2C2 is an N-Channel Enhancement Mode MOSFET from Huayi Microelectronics, designed for switching applications and power management in inverter systems. It features a low on-resistance of 2.8 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. ...
HYG064N08NA1P N Channel MOSFET 80 Volt 120 Amp Low On Resistance 6.4 Milliohm Suitable for Switching
Product OverviewThe HYG064N08NA1P/B is an N-Channel MOSFET designed for switching applications and power management in inverter systems. It features 80V/120A capability with a low on-resistance of 6.4m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free ...
