Single FETs, MOSFETs

Product OverviewThe HYG068N08NR1P is an N-Channel Enhancement Mode MOSFET designed for power management applications. It features high performance with low on-resistance (RDS(ON)= 6m typ. @ VGS = 10V), 100% avalanche tested for reliability, and is available in lead-free (RoHS Compliant) devices. This MOSFET is suitable for inverter systems, electric vehicle controllers, lithium battery protection boards, and general switching applications.Product AttributesBrand: HYG (HUAYI

Product OverviewThe AIMW120R035M1HXKSA1 is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET offers higher system efficiency, reduced cooling requirements, and increased power density, making it suitable for demanding applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.

Product OverviewThe HYG170ND03LA1C1 is a Dual N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V drain-source voltage and a continuous drain current of 24A, with low on-resistance of 15.6 m (typ) at VGS=10V and 20.5 m (typ) at VGS=4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYG (Huayi

Product OverviewThe CSD17577Q3A is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)Origin: ChinaMaterial: N-Channel MOSFETPackage: DFN3X3-8LTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max

HYG080N10LS1D Single N-Channel Enhancement Mode MOSFETThe HYG080N10LS1D is a high-performance, single N-channel enhancement mode MOSFET designed for demanding applications. It features a 100V/62A rating, low on-state resistance (RDS(ON) of 7.6m typ. @ VGS=10V), and 100% avalanche tested for reliability. This rugged device is suitable for high-frequency point-of-load synchronous buck converters.Product AttributesBrand: HUAYIPackage Type: TO-252-2LMaterial Compliance: Halogen

HYG190C04LA1S Complementary MOSFETThe HYG190C04LA1S is a 40V complementary MOSFET designed for high-performance applications. It offers reliable and rugged operation with 100% avalanche testing. Available in SOP8L package, this device is RoHS compliant and halogen-free.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin: ChinaMaterial: Halogen Free and Green Devices Available (RoHS Compliant)Certifications: RoHS Compliant, Halogen FreeTechnical Specification

HYG030N03LQ1P/B N-Channel Enhancement Mode MOSFETThe HYG030N03LQ1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications. It offers a 30V/100A rating with low on-resistance (RDS(ON) = 2.8m typ. @ VGS = 10V, 3.8m typ. @ VGS = 4.5V). This device is 100% avalanche tested, ensuring reliability and ruggedness. Lead-free and green device options are available, compliant with RoHS standards.Product AttributesBrand: HYMOrigin: ChinaCertificatio

Product OverviewThe HUAYI HY050N08P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It features an 85V/105A rating, low on-resistance (RDS(ON)= 4.7m typ.), 100% avalanche tested, and a reliable, rugged construction. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HUAYIModel: HY050N08P/BCertifications: RoHS Compliant, Lead Free, Green Devices AvailableTechnical

Product OverviewThe 2N7002T is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG (HXY) that utilizes advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and general switching applications.Product AttributesBrand: HUAXUANYANG (HXY)Origin: Shenzhen HuaXuanYang Electronics CO.,LTDMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechni

HC3M0015065K SiC Power MOSFETThe HC3M0015065K is a 3rd generation SiC MOSFET featuring an N-Channel Enhancement Mode design. Optimized for high-efficiency power conversion, it offers high blocking voltage with low on-resistance and high-speed switching capabilities. Its advanced technology reduces switching losses, minimizes gate ringing, and allows for increased power density and system switching frequency. The device is suitable for demanding applications such as EV

Product OverviewThe HYG120P06LR1C2 is a P-Channel Enhancement Mode MOSFET designed for switching applications and battery management. It features a low on-state resistance (RDS(ON)) of 11 m (typ.) at VGS = -10V and 15.5 m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Package Type: PDFN5*6-8LCertifications: RoHS

Product OverviewThe HYG063N09NS1P is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high current capability of 90V/120A with a low on-resistance of 5.5 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged. Halogen-free and RoHS compliant versions are available.Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd.)Origin: ChinaCertifications: RoHS Compliant,

Product OverviewThe H11N70D is an N-Channel Power MOSFET featuring new technology for high voltage applications. It offers low on-resistance, low conduction losses, and ultra-low gate charge for reduced driving requirements. This device is 100% avalanche tested and comes in a small TO-252 package.Product AttributesBrand: HX (implied by marking)Certifications: UL 5 A (implied by markings on pages)Technical SpecificationsParameterSymbolValueUnitConditionDrain-Source VoltageVDS7

Product OverviewThis document details various semiconductor packages including TO-252-2L, TO-251-3L, and TO-251-3S. It provides a comprehensive overview of their characteristics, including pin configurations, electrical parameters, and application guidelines. The content is intended for technical professionals involved in the selection and implementation of these components.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedC

HIGLD60R190D1 650V GaN-on-Silicon Enhancement-mode Power TransistorThe HIGLD60R190D1 is a 650V GaN-on-Silicon enhancement-mode power transistor in an 8mm x 8mm Dual Flat No-lead (DFN) package. Designed as a normally-OFF power switch, it offers ultra-high switching frequency, no reverse-recovery charge, and low gate/output charge. This transistor is qualified for industrial applications according to JEDEC Standards and features ESD safeguard. It is RoHS, Pb-free, and REACH

MMBT7002DW Dual N-Channel Enhancement Mode MOSFETThe MMBT7002DW is a high-density cell design Dual N-Channel Enhancement Mode MOSFET offering low RDS(ON), voltage-controlled small signal switching, high saturation current capability, and high-speed switching. It is designed for various electronic applications requiring efficient and reliable MOSFET performance. This device is Halogen and Antimony Free (HAF) and RoHS compliant, ensuring environmental responsibility.Product

Product OverviewThe HY1803C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It features a low on-resistance (RDS(ON)) of 2.4m at VGS = 10V and 2.8m at VGS = 4.5V, along with a high continuous drain current capability of 80A. This device is 100% avalanche tested, offering reliability and robustness for demanding power management tasks.Product AttributesBrand: HYMEXA (HUAYI)Origin: ChinaMaterial: Halogen-Free Devices

Product OverviewThe HYG035N08NS2C2 is an N-Channel Enhancement Mode MOSFET from Huayi Microelectronics, designed for switching applications and power management in inverter systems. It features a low on-resistance of 2.8 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant devices are available.Product AttributesBrand: Huayi MicroelectronicsOrigin: ChinaMaterial: Halogen-Free (RoHS Compliant)Certifications: RoHS

Product OverviewThe HYG064N08NA1P/B is an N-Channel MOSFET designed for switching applications and power management in inverter systems. It features 80V/120A capability with a low on-resistance of 6.4m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd.)Origin: ChinaMaterial: Lead-Free and Green Devices Available (RoHS

BSC0702LS N-SGT Enhancement Mode MOSFET The BSC0702LS is an N-Channel MOSFET utilizing advanced SGT technology, designed to deliver low RDS(ON), minimal gate charge, fast switching speeds, and excellent avalanche characteristics. This device offers enhanced ruggedness, making it suitable for various power supply and motor control applications, including consumer electronics, motor control, synchronous rectification, and isolated DC-DC converters. Product Attributes Brand: