Single FETs, MOSFETs
Power Switching MOSFET HUAYI HYG032N03LR1C1 Single N Channel Enhancement Mode with RoHS Compliance
Product OverviewThe HYG032N03LR1C1 is a single N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It features a low on-resistance (RDS(ON)) of 3.3m at VGS=10V and 4.3m at VGS=4.5V, 100% avalanche tested, and a reliable, rugged construction. This device is ...
Switching HUAYI HYG050N08NS1B N Channel MOSFET with 80 Volt Voltage Rating and High Current Capacity
Product OverviewThe HYG050N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features high performance with a low on-resistance of 4 m (typ.) at VGS = 10V, 80V/130A rating, and 100% avalanche tested for ...
HXY MOSFET NTTFS5826NL HXY N Channel Enhancement Mode MOSFET with 46 Amp Pulsed Drain Current Rating
Product DescriptionThe NTTFS5826NL is an N-Channel Enhancement Mode MOSFET that utilizes advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other ...
Power switching MOSFET HUAYI HY3410NA2P N Channel type with 140A drain current and lead free package
Product OverviewThe HY3410NA2P is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 100V and a continuous drain current of 140A, with a low on-state resistance of 5.7m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, ...
Battery Protection Load Switching and Power Management with Huixin BC2301 P Channel Power MOSFET
Product OverviewThe BC2301 is a P-Channel Enhancement Mode Power MOSFET designed for surface mount applications. It offers high power and current handling capabilities, making it suitable for battery protection, load switching, and power management in various electronic devices. This product is ...
HXY MOSFET HXY100N03DF N Channel Enhancement Mode MOSFET with 192A Pulsed Drain Current and Low RDS
Product DescriptionThe HXY100N03DF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is suitable for battery protection and other switching ...
High cell density trench technology MOSFET HUAYI HY1603P suitable for telecom power management and industrial
Product OverviewThe HY1603 is a super low gate charge N-Channel Enhancement Mode MOSFET featuring advanced high cell density Trench technology, excellent CdV/dt effect decline, and 100% EAS guaranteed. It is available in TO-220FB-3L and TO-263-2L packages. This MOSFET is designed for high-frequency ...
HXY MOSFET SCT3022KLHRC11 HXY Silicon Carbide Power MOSFET for Renewable Energy and EV Applications
SiC Power MOSFET N-Channel Enhancement ModeThe HUAXUANYANG HXY ELECTRONICS CO.,LTD SiC Power MOSFET offers advanced 3rd generation Silicon Carbide technology for high-efficiency power conversion. It is designed to reduce switching losses, minimize gate ringing, and improve system efficiency, leading ...
Power Management MOSFET HUAYI HYG023N04LS1D Single N Channel Enhancement Mode Device with Performance
Product OverviewThe HYG023N04LS1D is a single N-Channel Enhancement Mode MOSFET designed for power management applications. It offers high performance with a low on-state resistance of 2.0 m (typ.) at VGS = 10V and 2.8 m (typ.) at VGS = 4.5V. This MOSFET is 100% avalanche tested, reliable, and ...
Low RDS ON N Channel MOSFET HYG065N15NS1P avalanche tested and suitable for power switching circuits
Product OverviewThe HYG065N15NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features low on-resistance (RDS(ON)=6.2m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged construction. This device is available in lead-free and ...
N Channel HXY MOSFET DMN26D0UFB4 7 HXY Featuring Trench Technology for Low Gate Charge and Switching
Product OverviewThe DMN26D0UFB4-7 is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to offer excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection ...
Jilin Sino Microelectronics JCS2N60V MOSFET designed for switching in power supplies and UPS applications
Product OverviewThe JCS2N60 is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant...
N Channel Enhancement Mode MOSFET HUAYI HY3712B with 125V Voltage Rating and 170A Continuous Current
Product OverviewThe HY3712 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous current of 170A, featuring a low on-state resistance of 6.3 m (typ.) at VGS=10V. ...
1700V SiC N Channel MOSFET HXY MOSFET HSCT20N170 with RoHS Compliance and Halogen Free Construction
Product OverviewThe HSCT20N170 is a SiC Power MOSFET, N-Channel Enhancement Mode device from HUAXUANYANG ELECTRONICS CO.,LTD. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its resistance to latch-up ...
rugged MOSFET HUAYI HYG092N10LS1C2 for point of load converters power tools and DC DC power systems
Product OverviewThe HYG092N10LS1C2 is a single N-Channel enhancement mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It features a low RDS(ON) of 7.8 m (typ.) at VGS = 10V and 11.5 m (typ.) at VGS = 4.5V, ...
Low on state resistance HUAYI HYG016N04LS1P MOSFET ideal for high current power management solutions
Product OverviewThe HYG016N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for efficient power management. It features a low on-state resistance (RDS(ON)) of 1.4 m (typ.) at VGS = 10V and 1.8 m (typ.) at VGS = 4.5V, making it suitable for high-current applications. This MOSFET ...
HXY MOSFET IPT015N10N5 HXY N Channel MOSFET designed for enhanced ruggedness and power distribution
Product OverviewThe IPT015N10N5 is an N-Channel MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced SGT MOSFET technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, designed for enhanced ruggedness. This device is suitable for applications ...
Power Management and Switching MOSFET HUAYI HY3610P N Channel Enhancement Mode for Inverter Systems
Product OverviewThe HY3610P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche ...
N Channel Enhancement Mode HXY MOSFET BSS123 Suitable for PWM and Uninterruptible Power Supply Systems
BSS123 N-Channel Enhancement Mode MOSFET The BSS123 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications. It is ideal for battery protection, load switching, and uninterruptible power supply systems. ...
RoHS Compliant N Channel MOSFET IPS FTB07N08N with 85V Drain to Source Voltage and 120A Drain Current
Product Overview The FTB07N08N is a N-Channel MOSFET from InPower Semiconductor Co., Ltd. This component is designed for applications requiring low ON resistance and low gate charge, featuring a continuous drain current of 120A and a drain-to-source voltage of 85V. It is RoHS compliant and suitable ...
