Single FETs, MOSFETs

Product OverviewThe HYG050N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features high performance with a low on-resistance of 4 m (typ.) at VGS = 10V, 80V/130A rating, and 100% avalanche tested for reliability and ruggedness. Lead-Free and Green devices are available, complying with RoHS standards.Product AttributesBrand: HYMEXTAOrigin: ChinaMaterial: Lead-Free and Green

Product DescriptionThe NTTFS5826NL is an N-Channel Enhancement Mode MOSFET that utilizes advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.Product AttributesBrand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: DFN3X3-8LMarking: NTTFS5826NLTechnica

Product DescriptionThe HXY100N03DF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUA XUAN YANG ELECTRONICSProduct ID: HXY100N03DFPackage: DFN3X3-8LOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDMaterial: N-Channel Enhancement

Product OverviewThe BC2301 is a P-Channel Enhancement Mode Power MOSFET designed for surface mount applications. It offers high power and current handling capabilities, making it suitable for battery protection, load switching, and power management in various electronic devices. This product is halogen-free.Product AttributesPackage: SOT-23Certifications: Halogen freeTechnical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitDrain-Source Voltage-VDS20VGate-Source

Product OverviewThe HY3410NA2P is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 100V and a continuous drain current of 140A, with a low on-state resistance of 5.7m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available. It is suitable for use in Uninterruptible Power Supplies and Motor Control systems.Product AttributesBrand:

Product OverviewThe HY1603 is a super low gate charge N-Channel Enhancement Mode MOSFET featuring advanced high cell density Trench technology, excellent CdV/dt effect decline, and 100% EAS guaranteed. It is available in TO-220FB-3L and TO-263-2L packages. This MOSFET is designed for high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial applications.Product

SiC Power MOSFET N-Channel Enhancement ModeThe HUAXUANYANG HXY ELECTRONICS CO.,LTD SiC Power MOSFET offers advanced 3rd generation Silicon Carbide technology for high-efficiency power conversion. It is designed to reduce switching losses, minimize gate ringing, and improve system efficiency, leading to reduced cooling requirements and increased power density. This MOSFET is ideal for high-speed switching applications and is suitable for demanding environments.Product

Product OverviewThe HYG023N04LS1D is a single N-Channel Enhancement Mode MOSFET designed for power management applications. It offers high performance with a low on-state resistance of 2.0 m (typ.) at VGS = 10V and 2.8 m (typ.) at VGS = 4.5V. This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for DC/DC power management scenarios.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.)Material:

Product OverviewThe HYG065N15NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features low on-resistance (RDS(ON)=6.2m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged construction. This device is available in lead-free and green (RoHS compliant) versions, making it suitable for environmentally conscious designs. It is ideal for use in Uninterruptible Power Supply systems and other power switching

Product OverviewThe JCS2N60 is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications: RoHSTechnical SpecificationsOrder CodeMarkingPackageID (A)VDSS (V)Rds(on)-max () (Vgs=10V)Qg (nC)JCS2N60R

Product OverviewThe DMN26D0UFB4-7 is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to offer excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, featuring high performance with VDS = 20V, ID = 0.7A, and low RDS(ON) values.Product AttributesBrand: HUA XUAN YANG ELECTRONICSOrigin: Shenzhen

Product OverviewThe HY3712 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous current of 170A, featuring a low on-state resistance of 6.3 m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) options.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS Compliant, Lead Free,

Product OverviewThe HSCT20N170 is a SiC Power MOSFET, N-Channel Enhancement Mode device from HUAXUANYANG ELECTRONICS CO.,LTD. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its resistance to latch-up and halogen-free, RoHS compliant nature contribute to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequency. This

Product OverviewThe HYG092N10LS1C2 is a single N-Channel enhancement mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It features a low RDS(ON) of 7.8 m (typ.) at VGS = 10V and 11.5 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, making it RoHS compliant.Product AttributesBrand: HYG/HUAYIPackage Type: PDFN8L (5x6

Product OverviewThe HYG016N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for efficient power management. It features a low on-state resistance (RDS(ON)) of 1.4 m (typ.) at VGS = 10V and 1.8 m (typ.) at VGS = 4.5V, making it suitable for high-current applications. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS Compliant). It is ideal for power management in DC/DC converters, battery

Product OverviewThe IPT015N10N5 is an N-Channel MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced SGT MOSFET technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, designed for enhanced ruggedness. This device is suitable for applications such as battery protection and power distribution.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDProduct ID: IPT015N10N5Origin: Shenzhen HuaXuanYang Electronics CO.

Product OverviewThe HY3610P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested for reliability and ruggedness.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS Compliant, Lead FreeTechnical SpecificationsModelPackage TypeDrain-Source

Product Overview The FTB07N08N is a N-Channel MOSFET from InPower Semiconductor Co., Ltd. This component is designed for applications requiring low ON resistance and low gate charge, featuring a continuous drain current of 120A and a drain-to-source voltage of 85V. It is RoHS compliant and suitable for use in adaptors, chargers, and SMPS (Switched-Mode Power Supplies). Product Attributes Brand: IPS Package and Finish: Lead Free Certification: RoHS Compliant Origin: InPower

BSS123 N-Channel Enhancement Mode MOSFET The BSS123 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications. It is ideal for battery protection, load switching, and uninterruptible power supply systems. Product Attributes Brand: HUAXUANYANG ELECTRONICS CO.,LTD Origin: Shenzhen HuaXuanYang Electronics CO.,LTD Product ID: BSS123 Pack Marking: BSS123 Package: SOT-23 ESD Rating: 1500V

Product OverviewThe HYG065P03LQ1C2 is a single P-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a high continuous drain current of -70A and a low on-resistance of 5.9m (typ.) at VGS = -10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green options available, making it suitable for various power electronics needs.Product AttributesBrand: HYGModel: HYG065P03LQ1C2Origin