Single FETs, MOSFETs

Product OverviewThe HYG027N04LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers high performance with a low on-state resistance (RDS(ON)) of 2.6 m typ. at VGS = 10V and 3.1 m typ. at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged. Halogen-free devices compliant with RoHS are available.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.

Product OverviewThe HUAXUANYANG UF4C120070K4S is a 3rd generation SiC Power MOSFET designed for high-efficiency power conversion. It features a 3rd generation SiC MOSFET technology, an optimized package with a separate driver source pin, high blocking voltage with low on-resistance, and high-speed switching with low capacitances. Its fast intrinsic diode offers low reverse recovery (Qrr). This MOSFET is ideal for applications in renewable energy, EV battery chargers, high

Product OverviewThe HY4004P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a reliable and rugged performance with key features like 40V/208A capability and low on-state resistance (RDS(ON) = 2.5 m typ. @ VGS=10V). Available in Lead-Free and Green (RoHS Compliant) options, it undergoes 100% avalanche testing.Product AttributesBrand: HY (Huayi Microelectronics)Origin: ChinaCertifications: RoHS

HYG015N03LR1/B N-Channel Enhancement Mode MOSFETThe HYG015N03LR1/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications and battery protection. It features low on-resistance (RDS(ON)) of 1.8m(typ.) at VGS=10V and 2.4m(typ.) at VGS=4.5V, 100% avalanche tested for reliability, and is available in lead-free and green (RoHS compliant) versions.Product AttributesBrand: HYMOrigin: China (Huayi Microelectronics Co., Ltd.)Certifications:

Product OverviewThe HYG035N10NS2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a voltage rating of 100V and a continuous drain current of 180A. Key features include a low on-state resistance of 3.2m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd

HY1720W N-Channel Enhancement Mode MOSFETThe HY1720W is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages such as a low on-resistance (RDS(ON) of 27 m typ. at VGS = 10V), 100% avalanche tested, and a rugged construction. Available in Halogen Free and Green (RoHS Compliant) versions, this MOSFET is suitable for Uninterruptible Power Supply systems and other demanding

Product OverviewThe AOD2610E-HXY is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG HXYManufacturer: Shenzhen HuaXuanYang Electronics CO.,LTDWebsite: www.hxymos.comPackage:

Product OverviewThe JCS6N70C is an N-channel MOSFET designed for high-frequency switching applications. It features low gate charge, fast switching speeds, improved dv/dt capability, and is 100% avalanche tested. Ideal for use in high frequency switching mode power supplies, electronic ballasts, and UPS systems.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications: RoHSTechnical SpecificationsModelPackageMain CharacteristicsOrder CodeMarkingJCS6N70CTO

Product DescriptionThe AON7400A utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.Product AttributesBrand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)Origin: ChinaMaterial: N-Channel Enhancement Mode MOSFETPackage: DFN3X3-8LTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitVDSDrain-Source

Product OverviewThe HY3403P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers low on-resistance, high continuous drain current capability, and robust avalanche performance, making it suitable for demanding power electronics designs. Available in TO-220FB-3L and TO-263-2L packages, with lead-free options.Product AttributesBrand: HY (Huayi Microelectronics)Product Line: HY3403P/BMaterial: Lead-Free

Product OverviewThe HYG023N04NR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, particularly in Li-battery protection. It features a low on-state resistance (RDS(ON) of 2.2 m typ. @VGS = 10V), 45V/200A rating, 100% avalanche and DVDS tested, and a reliable, rugged design. Halogen-free and green options are available, compliant with RoHS standards.Product AttributesBrand: HYG (Huayi Microelectronics)Origin: ChinaCertifications:

Product OverviewThe HY3010P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 100V/100A rating and a low on-state resistance of 10m (typ.) at VGS = 10V. Key features include 100% avalanche tested, reliability, and availability in lead-free and green (RoHS compliant) versions. This MOSFET is suitable for Uninterruptible Power Supply (UPS) systems and other power switching applications.Product AttributesBrand:

Product DescriptionThis MOSFET is designed for channel enhancement mode applications, offering reliable and rugged performance. It is available in Halogen-Free and Green Devices, RoHS Compliant options. Applications include power management in DC-DC converters, load switching, and motor control.Product AttributesBrand: HUAYICertifications: RoHS Compliant, Halogen Free, Green DeviceMaterial: Molding compounds, die attach material, matte tin platingTechnical SpecificationsSymbo

Product OverviewThe HY3210P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers reliable and rugged performance with low on-resistance and is available in lead-free and green (RoHS compliant) versions.Product AttributesBrand: HOOYICertifications: RoHS Compliant, Lead Free, Green Devices AvailableMaterial: Molding compounds/die attach materials and 100% matte tin plate termination finish (for

Product OverviewThe JCS6N70C is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, fast switching speeds, and improved dv/dt capability, with 100% avalanche testing for reliability. RoHS compliant.Product AttributesBrand: JCSType: N-Channel MOSFETCertifications: RoHSTechnical SpecificationsPart NumberPackageID (A)VDSS (V)RDS(on)-max (@Vgs=10V) ()Qg-typ (nC)Main ApplicationsJCS6N70CTO

Product OverviewThe HY4008P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and a robust, reliable design. Available in various lead-free and green device options, it meets stringent environmental standards.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Lead Free and Green Devices Available (RoHS Compliant)Certifications: RoHS CompliantTechni

SiC Power MOSFET N-Channel Enhancement ModeThe HUAXUANYANG HXY SiC Power MOSFET is a high-performance N-channel enhancement mode device utilizing Wide Bandgap SiC MOSFET technology. It offers reduced switching losses, increased system switching frequency, and higher power density, leading to reduced heat sink requirements. Ideal for demanding applications such as switch mode power supplies, renewable energy systems, on-board chargers, and high voltage DC/DC converters.Product

Product OverviewThe AON3611-HXY is a Dual N+P-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDOrigin: Shenzhen, ChinaModel: AON3611-HXYPackage: DFN3X3B-8LWebsite: www.hxymos

Product OverviewThe H13N50F is a 500V N-Channel MOSFET designed for high-efficiency switching applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is ideal for use in Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications

Product OverviewThe IRFR5305T is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDProduct ID: IRFR5305TOrigin: ShenzhenPackage: TO-252-2L (TO-252-2(DPAK))Technical SpecificationsParameterSymbolConditionMinTypMaxUnitA