Single FETs, MOSFETs

SI2333CDS P-Channel Enhancement Mode MOSFETThe SI2333CDS is a P-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications, offering advantages like low on-resistance for efficient power handling. Its applications include battery protection, load switching, and uninterruptible power supplies.Product AttributesBrand: HUAXUANYANG (HXY)Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTDWebsite

Product DescriptionThe JCS6N70C is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, low Crss (typical 14pF), and fast switching speeds. The device is 100% avalanche tested and offers improved dv/dt capability, making it suitable for demanding applications. It is also RoHS compliant.Product AttributesBrand: JCSType: N-Channel MOSFETCertifications: RoHSTechnical SpecificationsModelPackag

Product Overview The HY10N30 is a N-channel enhancement mode MOSFET featuring advanced trench technology for low on-resistance. It is avalanche tested, reliable, and rugged, with lead-free and RoHS compliant options available. This MOSFET is suitable for portable equipment and battery-powered systems, including synchronous rectification applications. Product Attributes Brand: HY Origin: XI AN HUAYI MICROELECTRONICS CO., LTD. Certifications: RoHS Compliant, Halogen Free

Product OverviewThe HY1606D/U/V is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers reliable and rugged performance with features like avalanche rating and low RDS(ON). Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS Compliant, Lead FreeTechnical SpecificationsModelParameterTest ConditionsMin.Typ.Max.UnitHY1606D/U/VAbsolute Maximum

SiC Power MOSFET N-Channel Enhancement Mode The HUAXUANYANG HXY SiC Power MOSFET is an N-Channel Enhancement Mode device designed for high-performance applications. Leveraging Wide bandgap SiC MOSFET technology, it offers low On-Resistance with high blocking voltage, low capacitances for high-speed switching, and low reverse recovery charge (Qrr). This results in reduced switching losses, increased system switching frequency, higher power density, and reduced heat sink

Product OverviewThe JCS10N65T is a N-channel enhancement mode field-effect transistor designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss (typical 20pF), fast switching speed, 100% avalanche tested, improved dv/dt capability, and RoHS compliance.Product AttributesBrand: Jilin Sino-microelectronics Co., LtdCertifications: RoHSTechnical SpecificationsOrder CodesMarkingPackageID (A)VDSS (V)Rdson

Product OverviewThe HC3M0015065D is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD, designed for high-efficiency power applications. This N-Channel Enhancement Mode MOSFET offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. Its features lead to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching

Product OverviewThe HYG080ND03LA1S is a Dual N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It offers low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and is available in Halogen Free and Green (RoHS Compliant) versions. This MOSFET is suitable for DC/DC power management and general switching applications.Product AttributesBrand: HymexaOrigin: Xi'an Huayi Microelectronics Co., Ltd

Product OverviewThe HYG090N06LS1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features low on-resistance (RDS(ON)= 7.7 m typ. @VGS = 10V, 11.8 m typ. @VGS = 4.5V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. This MOSFET is suitable for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power

Product OverviewThe HYG024N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, ensuring RoHS compliance. This MOSFET is suitable for battery protection and power tool applications.Product AttributesBrand: HymexaOrigin: ChinaMaterial: Lead-free (RoHS Compliant), Halogen

Product OverviewThe HYG006N04LS1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-resistance of 0.55m (typ.) at VGS = 10V and 0.72m (typ.) at VGS = 4.5V, with a high continuous drain current of 530A. This MOSFET is 100% avalanche tested, reliable, and rugged, making it suitable for load switches and lithium battery protection boards.Product AttributesBrand: HymexaOrigin: ChinaCertifications: RoHS

Product DescriptionThe Si7850DP-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.Product AttributesBrand: HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDProduct ID: Si7850DP-HXYPackage: DFN5X6-8LMarking: Si7850DP-HXYQuantity per Pack: 5000

Product OverviewThe HYG023N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for power management applications. It features a low on-resistance (RDS(ON)) of 2.1 m typ. at VGS = 10V and 2.9 m typ. at VGS = 4.5V, with a continuous drain current of 170A. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for DC/DC power management.Product AttributesBrand: HymexaOrigin: China

Product OverviewThe AOD409 is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICSOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDModel: AOD409Website: www.hxymos.comTechnical SpecificationsParameterCond

Product OverviewThe HYG055N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a robust and reliable performance with key advantages such as low on-state resistance (RDS(ON)=5.3 m typ. @ VGS = 10V), 100% avalanche tested, and availability in lead-free and green (RoHS compliant) versions.Product AttributesBrand: HYGOrigin: China (Huayi Microelectronics Co., Ltd.)Certifications:

Product OverviewThe HY4504P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-resistance, high current capability, and a reliable, rugged design. Lead-Free and Green devices are available, ensuring RoHS compliance.Product AttributesBrand: HY (HUAYI)Origin: ChinaMaterial: Lead Free and Green Devices Available (RoHS Compliant)Certifications: RoHS Compliant, IPC/JEDEC J

Product OverviewThe SI2308 is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. Utilizing advanced trench technology, this device offers excellent RDS(ON) and is suitable for applications such as battery protection and load switching, including PWM applications and uninterruptible power supplies.Product AttributesBrand: HUAXUANYANG ELECTRONICSOrigin: Shenzhen, ChinaModel: SI2308Website: www.hxymos.comPackage: SOT-23Marking: MS08/6003Technical SpecificationsPa

Product OverviewThe HY3312 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous drain current of 130A, featuring a low on-state resistance of 7.7 m (typ.) at VGS=10V. This device is available in Lead-Free and Green (RoHS Compliant) versions, ensuring reliability and environmental responsibility. It is 100% avalanche tested and constructed

Product OverviewThe SI2301-ZE is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 1.8V. This MOSFET is ideal for PWM applications and serves as an effective load switch.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTD (HXY)Origin: Shenzhen, ChinaModel: SI2301-ZEPackage: SOT-23Product ID: A1SHBMarking: SI2301-ZETechnical SpecificationsParameterSymbo

Product OverviewThe HYG020N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a 40V/220A rating and a low RDS(ON) of 1.9 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.Product AttributesBrand: HYGOrigin: ChinaCertifications: RoHS Compliant, J-STD-020 (MSL classification)Material: Lead-Free and Green Devices