Single FETs, MOSFETs

Product OverviewThe HYG013N04NA1P is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications. It features a low on-state resistance of 1.3 m (typ.) at VGS = 10V, 40V/260A rating, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HymexaOrigin: ChinaMaterial: Lead-Free and Green Devices Available (RoHS Compliant)Certifications: RoHS

Product OverviewThe HY4903B6 is a N-Channel Enhancement Mode MOSFET from HOOYI, designed for switch applications, brushless motor drive, DC-DC conversion, and electric power steering. It features low on-resistance (RDS(ON)) at typical values of 1.3m (VGS=10V) and 1.7m (VGS=4.5V), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, complying with RoHS standards.Product AttributesBrand: HOOYIModel: HY4903B6Material: Lead Free and

Product OverviewThe JCS15N70C is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it a reliable choice for demanding applications. This RoHS-compliant product is available in TO-220C and TO-220MF packages.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications:

Product Overview The 15N10 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power switching and DC/DC converters. Key features include VDS = 100V, ID = 15A, and RDS(ON) < 112m @ VGS=10V. Product Attributes Brand: HUAXUANYANG HXY Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD Product ID: 15N10 Package Type: TO252-2L

Product OverviewThe HYG200P10LR1P/B is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a -100V drain-source voltage and -80A continuous drain current, with low on-resistance of 20m (typ.) at VGS = -10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant). It is ideal for portable equipment, battery-powered systems, and DC-DC converters.Product

HYG054N09NS1/B N-Channel Enhancement Mode MOSFET Product Overview The HYG054N09NS1/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and motor control. It features a high current capability (85V/135A) with a low on-state resistance of 4.8m (typ.) at VGS = 10V. The device is 100% avalanche tested, offering reliability and ruggedness. Lead-free and green devices compliant with RoHS are available. Product Attributes Brand: HYM (Huayi Microelectronics

HYG200N12NS1C2 N-Channel Enhancement Mode MOSFETThe HYG200N12NS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-state resistance (RDS(ON) of 14.7m typ. at VGS = 10V) and a high continuous drain current capability of 60A. This device is 100% avalanche tested, ensuring reliability and ruggedness. It is available in Halogen-Free and Green (RoHS Compliant) versions. Ideal for high-frequency synchronous

Product OverviewThe HOOYI HY1908D/U/S is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with 80V/90A ratings, avalanche ruggedness, and a low on-resistance of 7.8 m (typ.). This device is available in lead-free and green (RoHS compliant and halogen-free) options, ensuring reliability and environmental consciousness.Product AttributesBrand: HOOYICertifications: RoHS Compliant, Green Devices AvailableMaterial:

Product OverviewThe SI7848BDP-T1-E3 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is ideal for battery protection and general switching applications, including uninterruptible power supplies.Product AttributesBrand: HXY (HUAXUANYANG HXY ELECTRONICS CO.,LTD)Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage Marking: SI7848BDP

HYG170N03LR1C2 Single N-Channel Enhancement Mode MOSFET The HYG170N03LR1C2 is a single N-Channel enhancement mode MOSFET designed for various applications. It features low on-resistance (RDS(ON)= 14.5 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. This MOSFET is suitable for load switch and battery protection applications. Halogen-free devices are available. Product Attributes Brand: Hymexa Product Code: HYG170N03LR1C2 Package Type: PDFN8L(5x6)

Product OverviewThe HYG035N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) and high continuous drain current capabilities, making it suitable for load switching, lithium battery protection, and motor drive applications in electric tools. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available.Product AttributesBrand: HYGModel: HYG035N06LS1C2P

Product OverviewThe HYG019N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a robust and reliable performance with features such as 60V/210A rating, low RDS(ON) of 1.6 m (typ.) at VGS = 10V, and 100% avalanche tested. Halogen-free and RoHS compliant devices are available.Product AttributesBrand: HYG (Huayi)Origin: ChinaMaterial: Halogen-Free Devices Available

Product Overview The HSH100N15 is an N-Channel Fast Switching MOSFET designed for high-frequency applications. It features a 150V drain-source voltage, a continuous drain current of up to 100A, and a low on-resistance (RDS(ON)) of typically 7.3m. This MOSFET utilizes advanced high cell density Trench technology, offering super low RDS(ON) and guaranteed 100% EAS. It is suitable for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous

Product Overview The HSU4006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology

Product OverviewThe HYG050N13NS1B6 is a N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high voltage (135V) and high current (200A) capabilities with a low on-resistance of 3.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for use in Uninterruptible Power Supply systems.Product AttributesBrand: HYG (Huayi Microelectronics Co.

Product OverviewThe HYG065N15NS1B6 is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 150V and a continuous drain current of 165A, with a low on-resistance of 6.0m (typ.) at VGS = 10V. This device is 100% avalanche tested, offering reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd.)Origin:

HYG045P03LQ1C2 Single P-Channel MOSFET The HYG045P03LQ1C2 is a single P-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 3.8 m (typ.) at VGS = -10V and 6.2 m (typ.) at VGS = -4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available. Product Attributes Brand: Hymexa Product Code: HYG045P03LQ1C2 Package: PPAK5*6-8L Certifications: RoHS compliant,

Product Overview The HSU25P15 is a P-Channel Fast Switching MOSFET featuring 150V drain-source voltage and advanced trench MOSFET technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key advantages include a super low gate charge, excellent CdV/dt effect decline, and advanced high cell density

Product OverviewThis 3rd generation SiC MOSFET technology offers high blocking voltage with low on-resistance and high-speed switching with low capacitances. It features a fast intrinsic diode with low reverse recovery, making it ideal for applications requiring reduced switching losses, increased system efficiency, and higher power density. The device is halogen-free and RoHS compliant.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDOrigin: Shenzhen, ChinaMaterial:

Product OverviewThe AO3400-ED is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 2.5V. This device is ideally suited for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDOrigin: ShenzhenModel: AO3400-EDPackage: SOT-23Marking: A09TTechnical SpecificationsParameterSymbolConditionMinTypM