Single FETs, MOSFETs
Low On Resistance MOSFET HYG060N08NS1D with TO 251 3S Package and Lead Free RoHS Compliant Design
Product OverviewThe HYG060N08NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features low on-resistance (RDS(ON)=5.7 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-free and green ...
Low On State Resistance N Channel MOSFET HYG013N04NA1P 40V 260A with RoHS Compliant Lead Free Device
Product OverviewThe HYG013N04NA1P is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications. It features a low on-state resistance of 1.3 m (typ.) at VGS = 10V, 40V/260A rating, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices ...
Low On Resistance N Channel MOSFET HUAYI HY4903B6 Ideal for Switch Applications and Electric Power Steering
Product OverviewThe HY4903B6 is a N-Channel Enhancement Mode MOSFET from HOOYI, designed for switch applications, brushless motor drive, DC-DC conversion, and electric power steering. It features low on-resistance (RDS(ON)) at typical values of 1.3m (VGS=10V) and 1.7m (VGS=4.5V), 100% avalanche ...
power management using Jilin Sino Microelectronics JCS15N70FC N channel MOSFET for UPS and ballasts
Product OverviewThe JCS15N70C is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it a reliable choice for ...
N Channel MOSFET HXY MOSFET 15N10 Featuring Low RDS ON and High Current Rating for Switching Circuits
Product Overview The 15N10 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power switching and DC/DC converters. Key features include VDS = 100V, ...
P Channel Enhancement Mode MOSFET HUAYI HYG200P10LR1B with 100V Drain Source Voltage and Low On Resistance
Product OverviewThe HYG200P10LR1P/B is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a -100V drain-source voltage and -80A continuous drain current, with low on-resistance of 20m (typ.) at VGS = -10V. This MOSFET is 100% avalanche tested, ...
85V 135A N Channel MOSFET HUAYI HYG054N09NS1B Low On Resistance for Switching and Motor Control
HYG054N09NS1/B N-Channel Enhancement Mode MOSFET Product Overview The HYG054N09NS1/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and motor control. It features a high current capability (85V/135A) with a low on-state resistance of 4.8m (typ.) at VGS = 10V. The device ...
Power switching N Channel MOSFET HUAYI HYG200N12NS1C2 with 60A continuous drain current capability
HYG200N12NS1C2 N-Channel Enhancement Mode MOSFETThe HYG200N12NS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-state resistance (RDS(ON) of 14.7m typ. at VGS = 10V) and a high continuous drain current capability of 60A. This ...
Power MOSFET N Channel 80V 90A HUAYI HY1908D with Low On Resistance and Environmental Compliance
Product OverviewThe HOOYI HY1908D/U/S is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with 80V/90A ratings, avalanche ruggedness, and a low on-resistance of 7.8 m (typ.). This device is available in lead-free and green (RoHS ...
HXY MOSFET SI7848BDP T1 E3 HXY N Channel MOSFET with Low RDS ON and High Current Handling Capability
Product OverviewThe SI7848BDP-T1-E3 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is ideal for battery protection and general switching applications, ...
Durable Single N Channel MOSFET HYG170N03LR1C2 with Low On Resistance and Halogen Free Certification
HYG170N03LR1C2 Single N-Channel Enhancement Mode MOSFET The HYG170N03LR1C2 is a single N-Channel enhancement mode MOSFET designed for various applications. It features low on-resistance (RDS(ON)= 14.5 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. This MOSFET is suitable ...
Single N Channel MOSFET HUAYI HYG035N06LS1C2 Featuring Avalanche Tested Reliability and High Current
Product OverviewThe HYG035N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) and high continuous drain current capabilities, making it suitable for load switching, lithium battery protection, and motor ...
Power tool MOSFET with 60V 210A rating HUAYI HYG019N06LS1C2 single N Channel enhancement mode device
Product OverviewThe HYG019N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a robust and reliable performance with features such as 60V/210A rating, low RDS(ON) of 1.6 m (typ.) at VGS = ...
Fast Switching MOSFET HUASHUO HSH100N15 N Channel with 150V Drain Source Voltage and 7.3 Milliohm RDS
Product Overview The HSH100N15 is an N-Channel Fast Switching MOSFET designed for high-frequency applications. It features a 150V drain-source voltage, a continuous drain current of up to 100A, and a low on-resistance (RDS(ON)) of typically 7.3m. This MOSFET utilizes advanced high cell density ...
N channel mosfet huashuo hsu4006 featuring trench technology and low gate charge for power conversion
Product Overview The HSU4006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
Power MOSFET N Channel Enhancement Mode with 135V 200A HUAYI HYG050N13NS1B6 Low On Resistance Device
Product OverviewThe HYG050N13NS1B6 is a N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high voltage (135V) and high current (200A) capabilities with a low on-resistance of 3.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, ...
150V N Channel MOSFET HUAYI HYG065N15NS1B6 with 6 Milliohm On Resistance and 165A Continuous Current
Product OverviewThe HYG065N15NS1B6 is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 150V and a continuous drain current of 165A, with a low on-resistance of 6.0m (typ.) at VGS = 10V. This device is 100% avalanche tested, offering ...
Single P Channel MOSFET HYG045P03LQ1C2 Suitable for DC DC Converters and Switching Applications
HYG045P03LQ1C2 Single P-Channel MOSFET The HYG045P03LQ1C2 is a single P-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 3.8 m (typ.) at VGS = -10V and 6.2 m (typ.) at VGS = -4.5V, 100% avalanche tested, ...
High Speed Switching HXY MOSFET HC3M0016120D Silicon Carbide SiC with Low Capacitance and Fast Diode
Product OverviewThis 3rd generation SiC MOSFET technology offers high blocking voltage with low on-resistance and high-speed switching with low capacitances. It features a fast intrinsic diode with low reverse recovery, making it ideal for applications requiring reduced switching losses, increased ...
P Channel MOSFET HUASHUO HSU25P15 with 150V Drain Source Voltage and Superior CdV dt Effect Decline
Product Overview The HSU25P15 is a P-Channel Fast Switching MOSFET featuring 150V drain-source voltage and advanced trench MOSFET technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This device meets RoHS and Green Product requirements, ...
