Single FETs, MOSFETs

Product OverviewThe HYG025N06LS2P/B is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and is available in lead-free (RoHS Compliant) versions. This MOSFET is ideal for high-frequency point-of-load synchronous buck converters and power tool applications.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin: ChinaCertifications:

HYG028N10NS1/B N-Channel Enhancement Mode MOSFET The HYG028N10NS1/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages such as 100V/230A capability, low on-resistance (RDS(ON)=2.6m typ. @ VGS = 10V), and 100% avalanche tested. This device is also available in Lead-Free and Green (RoHS Compliant) versions, making it suitable for environmentally conscious designs.

Product OverviewThe HY3008 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high breakdown voltage of 80V and a continuous drain current of 100A, with a low on-state resistance of 6.6m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged. Lead-free devices are available, compliant with RoHS standards.Product AttributesBrand: HUAYICertifications: RoHS Compliant, Lead

Product OverviewThe HYG1N15P3 is a single channel enhancement mode MOSFET designed for various power management applications. It offers high reliability, ruggedness, and is available in lead-free devices. This MOSFET is compliant with RoHS standards and is suitable for use in inverter systems, electric vehicle controllers, and lithium battery protection boards.Product AttributesBrand: HYGOrigin: ChinaCertifications: RoHS Compliant, Halogen FreeMaterial: Lead-Free Devices

Product Overview The HSS2301C is a P-channel, 20V fast switching MOSFET utilizing high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Product Type: P-Channel MOSFET

Product OverviewThe HXY4612S is a Dual N+P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, including wireless charging, boost drivers, and brushless motors.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDOrigin: Shenzhen, ChinaPackage: SOP-8Technical SpecificationsM

H18N20D 200V SGT N-Channel MOSFETThe H18N20D is a 200V N-Channel SGT MOSFET designed for high-speed switching applications. It features fast switching speed, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, hard switching and high-speed circuits, power tools, UPS, and motor control applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not

HY3410 N-Channel Enhancement Mode MOSFET The HY3410 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low on-state resistance (RDS(ON) = 6.2 m typ. @ VGS=10V) and a continuous drain current of 100A. This series is reliable, rugged, 100% avalanche tested, and available in Lead Free and Green devices (RoHS Compliant). Product Attributes Brand: HYMEXA Certifications: RoHS

Product OverviewThe HYG400P10LR1P/B is a P-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a -100V drain-source voltage and -40A continuous drain current, with low on-state resistance (RDS(ON) = 42m typ. @ VGS = -10V). This MOSFET is 100% avalanche tested and offers a reliable and rugged design. It is available in lead-free and green (RoHS compliant) versions. Applications include portable equipment, battery-powered systems, DC-DC

Product OverviewThe HY1310D/U/V is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers reliable and rugged performance with features like avalanche rating and low RDS(ON). Available in lead-free and green (RoHS compliant) options.Product AttributesBrand: HuayiOrigin: ChinaCertifications: RoHS Compliant, Lead Free, GreenTechnical SpecificationsModelPackageVDS (V)ID (A) TC=25CID (A) TC=100CRDS(ON) (m) VGS=10VRDS(ON) (m) VGS=4

SiC Power MOSFET N-Channel Enhancement ModeThe HUAXUANYANG HXY SiC Power MOSFET is an N-Channel Enhancement Mode device designed for high-performance power applications. Leveraging Wide bandgap SiC MOSFET technology, it offers reduced switching losses, increased system switching frequency, and higher power density. This leads to reduced heat sink requirements, making it ideal for demanding applications such as switch mode power supplies, renewable energy systems, on-board

Product Overview The HSBE2738 is a low RDS(ON) trenched N-Channel MOSFET with robust ESD protection, designed for fast switching applications. This product is particularly suitable for Lithium-ion battery pack applications and meets RoHS and Green Product requirements with full function reliability approval. Its key advantages include low drain-source ON resistance and availability as a Green Device. Product Attributes Brand: HS-Semi Product Type: N-Channel MOSFET Certificati

Product Overview The HSM4062 is a N-Channel Fast Switching MOSFET designed for efficient power management. Featuring advanced Trench MOS technology, it offers low gate charge and guaranteed 100% EAS performance. This device is ideal for applications such as power management functions, DC-DC converters, and backlighting, with a green device option available. Product Attributes Brand: HS-Semi Technology: Advanced Trench MOS Device Type: N-Channel MOSFET Features: Fast Switching

Product Overview HSP15810C is a N-Channel, 100V Fast Switching MOSFET designed for high-frequency switching applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS Guaranteed performance. This MOSFET is ideal for applications such as motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. A green device option is available. Product Attributes Brand: HS-Semi Model:

Product OverviewThe HY4903P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features low on-resistance, 100% avalanche tested, and excellent CdV/dt effect decline, making it suitable for high-efficiency power solutions. Available in TO-263-2L and TO-220FB-3L packages.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS compliant, Lead-Free, Halogen FreeTechnical SpecificationsModelPackageVDS

Product OverviewThe HYG020N06LS1P is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-resistance (RDS(ON)=2m typ. @ VGS = 10V), 100% avalanche tested, and offers a reliable and rugged design. This device is available in lead-free (RoHS compliant) and green (lead-free and halogen-free) options.Product AttributesBrand: HymexaPackage Type: TO-220FB-3LCertifications: RoHS Compliant, Green (lead-free and

Product OverviewThe HYG065P03LQ1 is a P-Channel Enhancement Mode MOSFET featuring low on-resistance and high current capabilities. It is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions. This MOSFET is designed for power management applications in DC/DC converters, load switching, and motor control.Product AttributesBrand: HYMEXA (implied from www.hymexa.com)Origin: China (implied from Huayi Microelectronics Co., Ltd.

Product OverviewThe HUAXUANYANG HXY ELECTRONICS CO.,LTD SiC Power MOSFET, model IMZA120R014M1HXKSA1, is an N-Channel Enhancement Mode device designed for high-performance power applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitance, and is easy to parallel and simple to drive. Key features include resistance to latch-up and compliance with Halogen Free and RoHS standards. This MOSFET is suitable for applications such as

Product Overview The HSS2305A is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology. Product

HYG065N03LR1C2 - N-Channel Enhancement Mode MOSFETThe HYG065N03LR1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, including Li-battery protection and DC-DC converters. It features low on-state resistance (RDS(ON)) of 5.2 m (typ.) at VGS = 10V and 8.6 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable and rugged design. This device is Halogen Free and Green (RoHS Compliant).Product AttributesBrand: HYGOrigin: