Single FETs, MOSFETs

HY1607 N-Channel MOSFETThe HY1607 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers Avalanche Tested, Reliable, and Rugged performance, with Lead-Free and RoHS Compliant devices available. Applications include switching applications and power management for inverter systems.Product AttributesBrand: HYMEXAOrigin: ChinaCertifications: RoHS Compliant, Lead-FreeTechnical SpecificationsModelPackage

Product OverviewThe HY3010P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high current handling capability (100V/100A), low on-resistance (RDS(ON)=10m typ.), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HY (Huayi Microelectronics)Origin: ChinaCertifications: RoHS Compliant, Lead-Free, Green (Halogen-Free)Technical

Product OverviewThe HY3208A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 80V and a continuous drain current of 120A. Key features include low on-state resistance (RDS(ON) = 5.5 m typ. @ VGS=10V), reliability, ruggedness, and availability in lead-free and green (RoHS compliant) versions. The device is 100% avalanche tested.Product AttributesBrand: HUAYIProduct Series: HY3208AChann

Product OverviewThe HYG023N03LR1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-resistance of 2.1m (typ.) at VGS = 10V and 2.7m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYG (Huayi Microelectronics)Material: Halogen Free and Green Devices

Product OverviewThe HY5110W/A is a 2.1 N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 100V/316A rating, low on-resistance (RDS(ON)=2.1m typ. @ VGS=10V), and is avalanche rated for reliability. Available in lead-free and green (RoHS compliant) versions.Product AttributesBrand: HOOYICertifications: RoHS Compliant, Lead Free, Green Devices AvailableMaterial: Molding compounds/die attach materials and 100%

Product OverviewThe HYG015N03LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for various power management applications. It features a low on-state resistance (RDS(ON)) of 1.4m (typ.) at VGS = 10V and 2.2m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. Ideal for battery protection, switching applications, and DC/DC power management.Product AttributesBrand: HymexaOrigin: ChinaCerti

Product OverviewThe SI2302-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideal for battery protection and general switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICSOrigin: Shenzhen, ChinaPackage: SOT-23Website: www.hxymos.comTechnical SpecificationsProduct IDN-Channel MOSFETVDS (V)ID (A)RDS(ON) (m)VGS(th

Product OverviewThe AOD413A is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS (HXY). Utilizing advanced trench technology, it offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS (HXY)Origin: Shenzhen HuaXuanYang Electronics CO.,LTDProduct ID: AOD413APackage: TO-252-2

Product OverviewThe HY1606P/B is an N-Channel Enhancement Mode MOSFET designed for power management and switching applications, particularly in inverter systems. It offers a robust and reliable performance with a 60V/66A rating and low on-state resistance. Available in lead-free and green (RoHS compliant) versions.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Lead Free and Green Devices Available (RoHS Compliant)Certifications: RoHS Compliant, J-STD-020Technical

Product OverviewThe IRF100S201 is an N-Channel SGT Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced SGT MOSFET technology to achieve low RDS(ON), low gate charge, fast switching speeds, and excellent avalanche characteristics. This device is designed for enhanced ruggedness and suitability in various applications including consumer electronic power supplies, motor control, and synchronous-rectification.Product AttributesBrand: HUAXUANYANG ELECTRONICS

Product OverviewThe HYG053N10NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a low RDS(ON) of 4.8 m (typ.) at VGS = 10V and a continuous drain current of 100V/120A. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS Compliant). It is suitable for power management in inverter systems and battery management applications.Product AttributesBrand: HYM (Huayi

Product Overview The HSBB3004 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology. Product Attributes Brand: HS Product Type: N-channel

Product Overview The SI2301 is a P-channel, 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is approved for full function reliability. Key features include Green Device availability, super low gate charge, and excellent Cdv/dt effect decline. Product Attributes Brand

Product OverviewThe HY1607 is a high-performance N-channel enhancement mode MOSFET designed for various switching applications. It offers avalanche tested reliability, a rugged construction, and is available in Lead-Free and RoHS compliant versions. Key applications include switching applications and power management for inverter systems.Product AttributesBrand: HYNIX (implied by HY)Origin: ChinaCertifications: RoHS Compliant, Halogen Free (Green product definition)Technical

HY030N06 N-Channel Enhancement Mode MOSFET The HY030N06 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a robust and reliable solution with key advantages including a high drain-source voltage of 65V, a continuous drain current of 140A, and low on-state resistance (RDS(ON)) of 2.4 m (typ.) at VGS = 10V. The device is 100% avalanche tested and available in lead-free, RoHS-compliant

Product OverviewThe HYG035N10NS2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications, DC-DC converters, and motor control. It features a low on-resistance of 3.2m (typ.) at VGS = 10V, 100% avalanche tested, and is available in lead-free and green (RoHS compliant) options. This device offers reliability and ruggedness for demanding applications.Product AttributesBrand: HYM, HUAYIOrigin: ChinaCertifications: RoHS Compliant, Lead-Free, Green

Product OverviewThe HY029N10P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a voltage rating of 100V and a continuous drain current of 270A. Key advantages include 100% avalanche testing, reliability, and availability in lead-free and green (RoHS compliant) versions. This MOSFET is suitable for use in Uninterruptible Power Supplies (UPS) and other power switching circuits.Product AttributesBrand:

Product OverviewThe AO4805-HXY is a Dual P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications, particularly PWM applications. Key features include a VDS of -30V and an ID of -8.5A, with RDS(ON) as low as 18m at VGS=-10V and 28m at VGS=-4.5V.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: AO4805-HXYOrigin: Shenzhen, ChinaPackage: SOP-8 (SOIC-8

Product OverviewThe HC3M0060065D is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET offers higher system efficiency, reduced cooling requirements, increased power density, and enables higher system switching frequencies. It is easy to parallel and simple to drive, making it suitable for

Product Overview The HSBA4048 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 40V drain-source voltage and a continuous drain current of up to 100A, this MOSFET is built with advanced trench technology, offering low gate charge and high current capability. It is ideal for use in Switched-Mode Power Supplies (SMPS) for synchronous rectification, DC/DC converters, and Or-ing applications. The product is RoHS and Halogen-Free compliant.