Single FETs, MOSFETs
HXY MOSFET AO3400 ED N Channel MOSFET Featuring Low Gate Threshold and Suitable for Power Management
Product OverviewThe AO3400-ED is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 2.5V. This device is ideally suited for battery protection and other switching ...
N Channel MOSFET Switching Transistor HUAYI HY1607B Suitable for Inverter Power Management Applications
HY1607 N-Channel MOSFETThe HY1607 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers Avalanche Tested, Reliable, and Rugged performance, with Lead-Free and RoHS Compliant devices available. Applications include switching ...
High Current N Channel Enhancement Mode MOSFET HUAYI HY3010B with 10 Milliohm Typical On Resistance
Product OverviewThe HY3010P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high current handling capability (100V/100A), low on-resistance (RDS(ON)=10m typ.), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are ...
N Channel MOSFET HUAYI HY3208AP with 120A Drain Current and Lead Free RoHS Compliant Green Versions
Product OverviewThe HY3208A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 80V and a continuous drain current of 120A. Key features include low on-state resistance (RDS(ON) = 5.5 m typ. @ VGS=10V), ...
N Channel MOSFET HYG023N03LR1D with 30 Volt Drain Source Voltage and 226 Millijoule Avalanche Energy
Product OverviewThe HYG023N03LR1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-resistance of 2.1m (typ.) at VGS = 10V and 2.7m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ...
N Channel MOSFET HUAYI HY5110W 100V 316A Low On Resistance for Power Electronics
Product OverviewThe HY5110W/A is a 2.1 N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 100V/316A rating, low on-resistance (RDS(ON)=2.1m typ. @ VGS=10V), and is avalanche rated for reliability. Available in lead-free and green ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG015N03LS1C2 with Low RDS ON and Rugged Construction
Product OverviewThe HYG015N03LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for various power management applications. It features a low on-state resistance (RDS(ON)) of 1.4m (typ.) at VGS = 10V and 2.2m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. ...
Switching N Channel MOSFET HXY MOSFET SI2302 HXY with Low Gate Threshold and RDS ON in SOT 23 Package
Product OverviewThe SI2302-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideal for battery protection and general switching applications.Product ...
power management using HXY MOSFET AOD413A designed for battery protection and switching applications
Product OverviewThe AOD413A is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS (HXY). Utilizing advanced trench technology, it offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This MOSFET is ideally suited for battery ...
60 Volt 66 Amp N Channel MOSFET HUAYI HY1606B for Power Management and Switching Applications
Product OverviewThe HY1606P/B is an N-Channel Enhancement Mode MOSFET designed for power management and switching applications, particularly in inverter systems. It offers a robust and reliable performance with a 60V/66A rating and low on-state resistance. Available in lead-free and green (RoHS ...
HXY MOSFET IRF100S201 HXY N Channel SGT MOSFET with Low Gate Charge and Robust Avalanche Performance
Product OverviewThe IRF100S201 is an N-Channel SGT Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced SGT MOSFET technology to achieve low RDS(ON), low gate charge, fast switching speeds, and excellent avalanche characteristics. This device is designed for enhanced ruggedness ...
Power Switching MOSFET HUAYI HYG053N10NS1P Featuring 100V Voltage and Low RDS ON for Inverter Systems
Product OverviewThe HYG053N10NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a low RDS(ON) of 4.8 m (typ.) at VGS = 10V and a continuous drain current of 100V/120A. This device is 100% avalanche tested, reliable, and rugged, with ...
synchronous buck converter N channel MOSFET HUASHUO HSBB3004 with super low gate charge and excellent RDS
Product Overview The HSBB3004 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability ...
High cell density trench P channel MOSFET HUASHUO SI2301 with switching and green product compliance
Product Overview The SI2301 is a P-channel, 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements ...
switching MOSFET HUAYI HY1607P with 12 milliohm on state resistance at 10 volt gate source voltage
Product OverviewThe HY1607 is a high-performance N-channel enhancement mode MOSFET designed for various switching applications. It offers avalanche tested reliability, a rugged construction, and is available in Lead-Free and RoHS compliant versions. Key applications include switching applications ...
N Channel Enhancement Mode MOSFET HUAYI HY030N06P with 65V Drain Source Voltage and Low On Resistance
HY030N06 N-Channel Enhancement Mode MOSFET The HY030N06 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a robust and reliable solution with key advantages including a high drain-source voltage of 65V, a ...
Power MOSFET HUAYI HYG035N10NS2B Featuring Low On Resistance and High Current Handling Capability
Product OverviewThe HYG035N10NS2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications, DC-DC converters, and motor control. It features a low on-resistance of 3.2m (typ.) at VGS = 10V, 100% avalanche tested, and is available in lead-free and green (RoHS compliant) ...
Power Switching MOSFET HUAYI HY029N10B Featuring 100V Voltage and 270A Drain Current for Industrial
Product OverviewThe HY029N10P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a voltage rating of 100V and a continuous drain current of 270A. Key advantages include 100% avalanche testing, reliability, and availability in lead...
Dual P Channel Enhancement Mode MOSFET HXY MOSFET AO4805 HXY with Low RDS ON and High Current Rating
Product OverviewThe AO4805-HXY is a Dual P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications, particularly PWM applications. Key features include a VDS of -30V and an ID of -8.5A...
HXY MOSFET HC3M0060065D SiC Power Transistor with Low Reverse Recovery and High Power Density
Product OverviewThe HC3M0060065D is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It features high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET offers higher system ...
