Single FETs, MOSFETs

Product OverviewThe HYG050N13NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 135V and a continuous drain current of 200A, with a low on-resistance of 4.0m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS Compliant). It is suitable for use in Uninterruptible Power Supplies and other power switching applications

Product OverviewThe HC3M0045065K1 is a 3rd generation SiC MOSFET from HUAXUANYANG HXY ELECTRONICS CO.,LTD, featuring an optimized package with a separate driver source pin. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET is designed to reduce switching losses, minimize gate ringing, increase system efficiency, lower cooling requirements, boost power density,

Product OverviewThe IRLR8726T is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: IRLR8726TOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDMaterial: N-Channel Enhancement Mode MOSFETPackage: TO-252-2L (TO-252-2

Product OverviewThe HOOYI HY1603D/U/S is a N-Channel Enhancement Mode MOSFET featuring super low gate charge, advanced high cell density Trench technology, and excellent CdV/dt effect decline. It offers 100% EAS guaranteed and is available in a Halogen-Free device. This MOSFET is ideal for high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.Product

Product OverviewThe HY1920B is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a high breakdown voltage of 200V and a continuous drain current of 72A, with a low on-state resistance of 22m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is also suitable for networking DC-DC power systems.Product

Product OverviewThe HY3704P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested, ensuring robust performance.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS Compliant, Lead Free, Green Devices AvailableMaterial: Molding compounds/die attach materials and

Product OverviewThe HYG011N04LS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a low on-state resistance of 0.9 m (typ.) at VGS = 10V and 1.3 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS Compliant).Product AttributesBrand: HYMEXTAOrigin: ChinaCertifications: RoHS Compliant, Halogen-FreeTechni

HYG042N10NS1/B N-Channel Enhancement Mode MOSFETThe HYG042N10NS1/B is a 100V/160A N-Channel Enhancement Mode MOSFET designed for power switching applications and DC-DC converters. It features low on-resistance (RDS(ON)=3.5m typ. @ VGS = 10V), 100% avalanche testing, and a reliable, rugged design. Lead-free and green devices are available, complying with RoHS standards.Product AttributesBrand: HymexaOrigin: ChinaCertifications: RoHS Compliant, Lead-Free, Green Devices

Product OverviewThe PDFN5*6 HYG065N07NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low on-resistance of 5.3 m (typ.) at VGS = 10V, 70V/70A rating, and is 100% avalanche tested for reliability and ruggedness. Halogen-free and RoHS compliant options are available.Product AttributesBrand: HYMExaPackage Type: PDFN5*6, PPAK5*6-8LCertifications: RoHS

Product OverviewThe HY4004P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers reliable and rugged performance with a low on-state resistance and is available in lead-free and green (RoHS compliant) options. This device is 100% avalanche tested.Product AttributesBrand: HY (Huayi Microelectronics)Origin: ChinaCertifications: RoHS Compliant, Lead Free, Green Devices AvailableMaterial: Matte tin plate

HYG026N03LS1C2 - N-Channel Enhancement Mode MOSFET The HYG026N03LS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for various switching applications. It features low on-resistance, 100% avalanche tested, and is available in Halogen Free and Green (RoHS Compliant) options. Ideal for Li-battery protection, DC-DC converters, and motor control. Product Attributes Brand: HYG (Huayi Microelectronics) Product Type: N-Channel Enhancement Mode MOSFET Package:

Product OverviewHUAYI offers lead-free and halogen-free products that are fully compliant with RoHS and meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020 for MSL classification. The term "Green" signifies lead-free (RoHS compliant) and halogen-free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and

Product OverviewThe HYG260P03LR1S is a P-Channel Enhancement Mode MOSFET designed for power management and switching applications. It features a low RDS(ON) of 21.6m (typ.) at VGS = -10V and 42m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions. Applications include DC/DC power management and battery protection.Product AttributesBrand: HYG (HUAYI)Origin: ChinaMaterial: Halogen Free

Product OverviewThe H40N25 is an N-Channel Power MOSFET featuring advanced high cell density Trench technology, super low gate charge, and excellent Cdv/dt effect decline. It is designed for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switch applications. This green device offers efficient performance with reduced switching losses.Product AttributesBrand: 6GMKModel: H40N25Package: TO-220ABCertifications: ULTechnical

Product OverviewThe HYG009N04LS1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in DC/DC converters. It features low on-state resistance (RDS(ON) = 0.75m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free options are available.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.)Certifications: RoHS compliant, Halogen-freeTechnical SpecificationsP

HYG014N03LR1P/B N-Channel Enhancement Mode MOSFET The HYG014N03LR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It features low on-resistance (RDS(ON) = 1.3m typical at VGS = 10V and 1.6m typical at VGS = 4.5V), 100% avalanche tested, and a reliable, rugged construction. Available in lead-free and green (RoHS compliant) versions, this MOSFET is ideal for battery protection and power management in inverter systems. Product

Product OverviewThe NTH4L027N65S3F is a 3rd generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS, featuring an N-Channel Enhancement Mode design. It is optimized with a separate driver source pin for improved performance, offering high blocking voltage with low on-resistance, and high-speed switching with low capacitances. The MOSFET has a fast intrinsic diode with low reverse recovery characteristics, making it suitable for applications requiring high efficiency and

Product OverviewThe HYG110P04LQ2C2 is a single P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 9.0 m (typ.) at VGS = -10V and 13.0 m (typ.) at VGS = -4.5V, 100% avalanche tested, and a reliable, rugged construction. Halogen-free devices are available.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin: ChinaCertifications: RoHS compliant, Halogen-FreeTechnical

Product Overview The HSU150N03 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It features super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.

Product OverviewThe HYG060N08NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features low on-resistance (RDS(ON)=5.7 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYGOrigin: ChinaCertifications: RoHS Compliant, Lead-Free, Green Devices AvailableTechnical SpecificationsMo