Single FETs, MOSFETs
High Reliability P Channel HXY MOSFET IRFR5305T with Low Gate Charge and RDS ON Characteristics
Product OverviewThe IRFR5305T is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.Product ...
Power Management N Channel MOSFET HUAYI HY5208W 80V 320A Low On Resistance for Inverter Applications
Product OverviewThe HY5208W/A is a 1.7 N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with features like 80V/320A capability, low on-resistance (RDS(ON)=1.7 m typ. @ VGS=10V), avalanche rating, and a reliable, rugged construction. Lead...
Power switching N Channel MOSFET HUAYI HY3208NA3P 80 Volt 120 Ampere with avalanche tested reliability
Product OverviewThe HYG3208NA3P/B is an N-Channel MOSFET designed for switching applications and power management in inverter systems. It features a high current capability of 80V/120A, low on-resistance (RDS(ON) = 7m typ. @ VGS = 10V), and is 100% avalanche tested for reliability and ruggedness. ...
Low Gate Charge N Channel MOSFET HXY MOSFET AON6508 HXY Suitable for Battery Protection Applications
AON6508 N-Channel Enhancement Mode MOSFET The AON6508 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications. Product Attributes ...
Low On State Resistance Single N Channel MOSFET HUAYI HYG017N04LS1C2 for DC DC Converter Applications
Product OverviewThe HYG017N04LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-state resistance (RDS(ON)) of 1.7m (typ.) at VGS = 10V and 2.3m (typ.) at VGS = 4.5V. This device is ...
High Current N Channel MOSFET HUAYI HY3708P with 170A Drain Current and Avalanche Tested Reliability
Product OverviewThe HY3708 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 80V and a continuous drain current of 170A, featuring a low on-resistance of 3.8 m (typ.) at VGS=10V. This MOSFET is reliable, ...
Power MOSFET Huixin HSCM0020065K Silicon Carbide N Channel with High Blocking Voltage and Power Conversion
Product OverviewThe HSCM0020065K is an N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion. It features high blocking voltage with low on-resistance, high-speed switching capabilities with low capacitances, and is easy to parallel and simple to drive. These ...
N Channel MOSFET HUAYI HYG020N04NR1B 40V 220A Rating Avalanche Tested Lead Free Device for Switching
Product OverviewThe HYG020N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, particularly in Li-battery protection. It offers high performance with a 40V/220A rating, low on-resistance (RDS(ON) = 1.9 m typ. @VGS = 10V), and is 100% avalanche tested for reliability...
N Channel Enhancement Mode MOSFET HUAYI HYG035N04LR1D with Low RDS ON and Avalanche Tested Rugged Design
Product OverviewThe HYG035N04LR1D is a single N-Channel enhancement mode MOSFET designed for various power applications. It features low on-resistance (RDS(ON)) at typical values of 3.0 m @VGS = 10V and 4.0 m @VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are ...
Power MOSFET HUAYI HY3810NA2P with 100 Volt Drain Source Voltage and RoHS Compliant Lead Free Design
Product Overview The HY3810NA2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high voltage (100V) and current (180A) capabilities, a low on-resistance of 4.3m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. This product is ...
HXY MOSFET FDS89161LZ HXY Dual N Channel Enhancement Mode MOSFET with High Drain Current Capability
Product DescriptionThe FDS89161LZ is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product ...
N Channel Enhancement Mode MOSFET HUAYI HYG012N03LR1B with Avalanche Tested and Rugged Construction
HYG012N03LR1P/B N-Channel Enhancement Mode MOSFETThe HYG012N03LR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-state resistance of 1.2 m (typ.) at VGS = 10V and 1.4 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, ...
30V N Channel MOSFET Huixin H7534N Featuring 100 Percent Avalanche Testing and High Speed Switching
Product OverviewThe H7534N is a 30V single N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, ...
HXY MOSFET AO4828 HXY Dual N Channel MOSFET Featuring Low On State Resistance and High Drain Current
Product OverviewThe AO4828-HXY is a Dual N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to offer excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery ...
Low Rds on N channel MOSFET Jilin Sino Microelectronics JCS8N60FB 220MF with TO 220MF package style
Product OverviewThe JCS8N60B is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability. This ...
N Channel Enhancement Mode MOSFET HUAYI HY4008B6 with 80V Voltage Rating and 255A Continuous Current
Product OverviewThe HY4008B6 is a N-Channel Enhancement Mode MOSFET from HUAYI, designed for switch applications and brushless motor drives. It offers high performance with a voltage rating of 80V and a continuous current of 255A, featuring low on-resistance (RDS(ON)= 2.6m typ. @VGS = 10V). This ...
Single N Channel MOSFET HUAYI HYG017N04NR1B6 with 45V Drain Source Voltage and Halogen Free Options
Product OverviewThe HYG017N04NR1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features high current capability (45V/320A) with low on-resistance (RDS(ON) = 1.3 m typ. @VGS = 10V). This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It ...
SiC Power MOSFET HXY MOSFET NTBG040N120SC1-HXY N-Channel Device for EV Chargers and Renewable Energy
Product OverviewThe HUAXUANYANG HXY ELECTRONICS CO.,LTD NTBG040N120SC1 is a SiC Power MOSFET, N-Channel Enhancement Mode device designed for high-efficiency power applications. Leveraging 3rd generation SiC MOSFET technology, it offers reduced switching losses, minimized gate ringing, and higher ...
N channel MOSFET Jilin Sino Microelectronics JCS4N60FC 220MF with fast switching and low gate charge
Product OverviewThe JCS4N60C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability. This RoHS ...
Power Switching MOSFET HUAYI HYG055N08NS1P N Channel Enhancement Mode for Industrial Applications
HYG055N08NS1P/B N-Channel Enhancement Mode MOSFETThe HYG055N08NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a robust and reliable solution with key advantages including low on...
