Single FETs, MOSFETs

Product OverviewThe HY5208W/A is a 1.7 N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with features like 80V/320A capability, low on-resistance (RDS(ON)=1.7 m typ. @ VGS=10V), avalanche rating, and a reliable, rugged construction. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HY (Huayi)Origin: ChinaCertifications: RoHS Compliant, Lead Free, Green DevicesPackage

AON6508 N-Channel Enhancement Mode MOSFET The AON6508 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications. Product Attributes Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD) Origin: Shenzhen, China Package: DFN5X6-8L (PDFN-8(5.8x4.9)) Technical Specifications Symbol Parameter Conditions Min. Typ. Max

Product OverviewThe HYG3208NA3P/B is an N-Channel MOSFET designed for switching applications and power management in inverter systems. It features a high current capability of 80V/120A, low on-resistance (RDS(ON) = 7m typ. @ VGS = 10V), and is 100% avalanche tested for reliability and ruggedness. Lead-free and green device options are available, compliant with RoHS standards.Product AttributesBrand: HYG (Huayi Microelectronics)Origin: ChinaMaterial: Lead-Free and Green

Product OverviewThe HYG017N04LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-state resistance (RDS(ON)) of 1.7m (typ.) at VGS = 10V and 2.3m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available.Product AttributesBrand: HYGModel: HYG017N04LS1C2Type: Single N-Channel Enhancement

Product OverviewThe HY3708 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 80V and a continuous drain current of 170A, featuring a low on-resistance of 3.8 m (typ.) at VGS=10V. This MOSFET is reliable, rugged, and available in lead-free and green device options, compliant with RoHS standards. It is 100% avalanche tested.Product AttributesBrand: HUAYICertifications: RoHS Compliant,

Product OverviewThe HSCM0020065K is an N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion. It features high blocking voltage with low on-resistance, high-speed switching capabilities with low capacitances, and is easy to parallel and simple to drive. These characteristics lead to higher system efficiency, reduced cooling requirements, increased power density, and the ability to operate at increased system switching frequencies. It is suitable

Product OverviewThe HYG035N04LR1D is a single N-Channel enhancement mode MOSFET designed for various power applications. It features low on-resistance (RDS(ON)) at typical values of 3.0 m @VGS = 10V and 4.0 m @VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin: ChinaMaterial: Halogen-Free Devices Available (RoHS compliant)Certifications: RoHSTechnical

Product OverviewThe HYG020N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, particularly in Li-battery protection. It offers high performance with a 40V/220A rating, low on-resistance (RDS(ON) = 1.9 m typ. @VGS = 10V), and is 100% avalanche tested for reliability. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.)Material: Lead-Free and

Product DescriptionThe FDS89161LZ is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDWebsite: www.hxymos.comTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitVDSDrain-Source

Product Overview The HY3810NA2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high voltage (100V) and current (180A) capabilities, a low on-resistance of 4.3m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. This product is available in lead-free and green (RoHS compliant) versions, suitable for demanding applications like Uninterruptible Power Supplies and Motor Control. Product Attributes Brand: HUAYI

HYG012N03LR1P/B N-Channel Enhancement Mode MOSFETThe HYG012N03LR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-state resistance of 1.2 m (typ.) at VGS = 10V and 1.4 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged construction. This device is available in lead-free and green (RoHS compliant) options, making it suitable for battery management systems and other demanding applications

Product OverviewThe H7534N is a 30V single N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, hard switching and high-speed circuits, power tools, UPS, and motor control.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedC

Product OverviewThe AO4828-HXY is a Dual N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to offer excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG HXYOrigin: Shenzhen, ChinaTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitGeneral FeaturesDrain

Product OverviewThe JCS8N60B is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications: RoHSTechnical SpecificationsOrder CodesMarkingPackageID (A)VDSS (V)Rds(on)-max

Product OverviewThe HY4008B6 is a N-Channel Enhancement Mode MOSFET from HUAYI, designed for switch applications and brushless motor drives. It offers high performance with a voltage rating of 80V and a continuous current of 255A, featuring low on-resistance (RDS(ON)= 2.6m typ. @VGS = 10V). This device is 100% avalanche tested, reliable, and rugged. Lead-Free and Green devices are available, compliant with RoHS standards.Product AttributesBrand: HUAYIModel: HY4008B6Package

Product OverviewThe HUAXUANYANG HXY ELECTRONICS CO.,LTD NTBG040N120SC1 is a SiC Power MOSFET, N-Channel Enhancement Mode device designed for high-efficiency power applications. Leveraging 3rd generation SiC MOSFET technology, it offers reduced switching losses, minimized gate ringing, and higher system efficiency. Its optimized package with a separate driver source pin and high blocking voltage with low on-resistance make it suitable for demanding applications like renewable

Product OverviewThe HYG017N04NR1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features high current capability (45V/320A) with low on-resistance (RDS(ON) = 1.3 m typ. @VGS = 10V). This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for applications such as load switches and lithium battery protection boards.Product AttributesBrand: HymexaModel: HYG017N04NR1B6Package: TO-263-6LCertifications: RoHS

Product OverviewThe JCS4N60C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability. This RoHS compliant product is available in various packages and configurations.Product AttributesBrand: JILIN SINO-MICROELECTRONICS CO., LTD.Certifications: RoHSTechnical SpecificationsOrder

HYG055N08NS1P/B N-Channel Enhancement Mode MOSFETThe HYG055N08NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a robust and reliable solution with key advantages including low on-state resistance (RDS(ON)=5.3 m typ. @VGS = 10V), 100% avalanche tested, and lead-free/green device availability (RoHS compliant).Product AttributesBrand: HYG (Huayi Microelectronics

Product OverviewThe HYG350P13NA1B is a single P-Channel Enhancement Mode MOSFET designed for various power applications. It features a low on-resistance of 35m (typ.) at VGS = -10V, 100% avalanche testing for reliability, and a rugged construction. This device is available in lead-free and green (RoHS compliant) versions. Key applications include power tools, networking, and DC-DC power systems.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin: ChinaMateri