Single FETs, MOSFETs

Product OverviewThe HYG019N04NR1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features high performance with a 40V/127A rating and a low RDS(ON) of 2.0 m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for load switch and battery protection applications.Product AttributesBrand: HymexaModel: HYG019N04NR1C2Certifications: RoHS compliant, Halogen-freeTechnical SpecificationsPa

Product Overview The SI2302 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it ideal for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and features super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology. Product Attributes Brand: HS-Semi Product Type: N-Channel

Product OverviewThe HY1210D/U/V is a N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 100V/26A rating, low on-resistance (RDS(ON) = 32m typ. @VGS = 10V), and 100% avalanche tested for reliability and ruggedness. Available in TO-252-2L, TO-251-3L, and TO-251-3S packages, it is also offered in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HY1210D/U/V (Huayi Microelectronics

Product OverviewThe HY3410 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 100V/140A rating and a low RDS(ON) of 6.2 m (typ.) at VGS=10V. This device is reliable, rugged, and available in Lead Free and Green (RoHS Compliant) versions, with 100% avalanche testing.Product AttributesBrand: HYMEXACertifications: RoHS Compliant, Green Devices AvailableMaterial: Lead Free and

Product OverviewThe FDMS6681Z is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.Product AttributesBrand: HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: DFN5X6-8L(Power(5x6))Technical SpecificationsSymbolParameterConditi

Product OverviewThe HYG012N08NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a low RDS(ON) of 0.9 m (typ.) at VGS = 10V, 80V/420A rating, and is 100% avalanche tested for reliability. Halogen-free and RoHS compliant devices are available.Product AttributesBrand: HymexaOrigin: ChinaCertifications: RoHS Compliant, Halogen-FreeTechnical SpecificationsModelParameterTest

Product Overview The HSBG2024 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features a small single switch design, ESD protected gate, and low gate threshold voltage. This MOSFET meets RoHS and Green Product requirements with full function reliability approval. Product Attributes Brand: HSBG Product Type: N-Ch MOSFET Voltage Rating: 20V Switching Speed: Fast Switching

Product OverviewThe HYG011N04LS1B6 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, Li-battery protection, and motor control. It features low on-resistance (RDS(ON) = 0.92 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Available in halogen-free and green (RoHS compliant) versions.Product AttributesBrand: HYGOrigin: China (Huayi Microelectronics Co., Ltd.)Material: Halogen Free and Green Devices Available

Product Overview The HSBB3202 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, providing excellent Cdv/dt effect decline through advanced high cell density trench technology. Product Attributes Brand: HS-Semi Model: HSBB3202 Certifications:

Product OverviewThe HY3210P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high current capability (100V/120A) with a low on-resistance of 6.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for use in Uninterruptible Power Supplies and other power switching applications.Product AttributesBrand: HUAYIProduct Series:

Product OverviewThe HY1906C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 60V/70A rating with a low RDS(ON) of 5.7 m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available.Product AttributesBrand: HUAYIOrigin: Xi'an Huayi Microelectronics Co., Ltd.Certifications: RoHS compliant, Halogen-Free

Product OverviewThe HY1303C is a single N-Channel Enhancement Mode MOSFET featuring high cell density for low Rds(on). It is designed for applications requiring efficient power switching and is suitable for battery pack protection and power tools.Product AttributesBrand: Halogen Device Available (implied by HY1303C and www.hymexa.com)Certifications: RoHS compliant, Halogen FreeMaterial: Lead-free product with 100% matte tin plate termination finishTechnical SpecificationsMode

Product OverviewThe FDS4435BZ is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 2.5V. This device is ideal for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG HXYManufacturer: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: SOP-8 (SOIC-8)Technical SpecificationsSymbolParameterTest ConditionMin.Typ.Max

Product Overview The AO3416 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This device meets RoHS and Green Product requirements, offering full function reliability. Key features include super low gate charge, excellent Cdv/dt effect decline, advanced high cell density Trench technology, and ESD protection (2KV). Product Attributes Brand: HS-Semi Product Type: N-Channel

Product OverviewThe HYG017N10NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a 100V/330A rating, low on-state resistance (RDS(ON)=1.6m typ. @VGS = 10V), and is 100% avalanche tested for reliability and ruggedness. Halogen-free and RoHS compliant versions are available.Product AttributesBrand: HYG (Huayi Microelectronics)Origin: ChinaCertifications: RoHS Compliant,

Product OverviewThe HYG016N04NR1/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It features a high continuous drain current of 240A and a low on-resistance of 1.4 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant). It is suitable for applications such as Li-battery protection.Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd.)Material:

HYG023N04NR1P/B N-Channel Enhancement Mode MOSFET The HYG023N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, including Li-battery protection. It offers high performance with a low RDS(ON) of 2.2m(typ.) at VGS = 10V, 45V/179A rating, and 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards. Product Attributes Brand: Hymexa Model: HYG023N04NR1P/B Certifications: RoHS

HYG082N03LR1C1 - Single N-Channel Enhancement Mode MOSFETThe HYG082N03LR1C1 is a single N-Channel enhancement mode MOSFET designed for power management and switching applications. It offers high performance with low on-resistance and is 100% avalanche tested for reliability. This device is available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYG (Huayi Microelectronics)Origin: ChinaMaterial: Lead-free (RoHS Compliant), Halogen FreeCertificati

Product OverviewThe HY3215W is an N-Channel Enhancement Mode MOSFET designed for high-power applications. It features a 150V/130A rating, low on-resistance of 11.5m (typ.) at VGS=10V, and is 100% avalanche tested for reliability. Available in Halogen Free and Green (RoHS Compliant) versions, it is suitable for demanding applications such as Brushless Motor Drive and Electric Power Steering.Product AttributesBrand: HY (Huayi Microelectronics)Package Type: TO-247A-3LCertificati

HYG420N06LR1D/U/V N-Channel Enhancement Mode MOSFETThe HYG420N06LR1D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for power management applications, including DC/DC conversion and synchronous rectification. It offers a 60V/22A rating with low on-resistance of 35m (typ.) at VGS = 10V and 44m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ensuring reliability and ruggedness. It is available in RoHS compliant, Halogen-free, and Green device