Single FETs, MOSFETs
N Channel Enhancement Mode MOSFET HUAYI HYG065N03LR1C2 with RoHS compliant halogen free construction
HYG065N03LR1C2 - N-Channel Enhancement Mode MOSFETThe HYG065N03LR1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, including Li-battery protection and DC-DC converters. It features low on-state resistance (RDS(ON)) of 5.2 m (typ.) at VGS = 10V and 8.6 m ...
Trench N Channel MOSFET HUASHUO SI2302 Designed for Fast Switching and Load Switch Applications
Product Overview The SI2302 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it ideal for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
load switch MOSFET HUAYI HYG019N04NR1C2 with 2 milliohms RDS ON and 40V maximum drain source voltage
Product OverviewThe HYG019N04NR1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features high performance with a 40V/127A rating and a low RDS(ON) of 2.0 m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is ...
Low On Resistance MOSFET HUAYI HY1210D with 100V 26A Rating and Halogen Free RoHS Compliant Material
Product OverviewThe HY1210D/U/V is a N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 100V/26A rating, low on-resistance (RDS(ON) = 32m typ. @VGS = 10V), and 100% avalanche tested for reliability and ruggedness. Available in TO...
N Channel MOSFET HUAYI HY3410B with 100V Drain Source Voltage and 140A Continuous Current Rating
Product OverviewThe HY3410 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 100V/140A rating and a low RDS(ON) of 6.2 m (typ.) at VGS=10V. This device is reliable, rugged, and available in Lead ...
P Channel MOSFET HXY MOSFET FDMS6681Z HXY Suitable for Switching Applications and Battery Protection
Product OverviewThe FDMS6681Z is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for battery protection and ...
load switch MOSFET HUASHUO HSBG2024 with trenched N channel structure and low gate threshold voltage
Product Overview The HSBG2024 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features a small single switch design, ESD protected gate, and low gate threshold voltage. This MOSFET meets RoHS and ...
HYG012N08NS1TA MOSFET Featuring Low RDS ON and 420 Amp Continuous Drain Current for Power Management
Product OverviewThe HYG012N08NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a low RDS(ON) of 0.9 m (typ.) at VGS = 10V, 80V/420A rating, and is 100% avalanche tested for reliability. Halogen...
High cell density trenched MOSFET HUASHUO HSBB3202 N channel device for synchronous buck converters
Product Overview The HSBB3202 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function ...
Switching Application N Channel MOSFET HUAYI HYG011N04LS1B6 with Low On Resistance and Robust Design
Product OverviewThe HYG011N04LS1B6 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, Li-battery protection, and motor control. It features low on-resistance (RDS(ON) = 0.92 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Available ...
Power Switching N Channel Enhancement Mode MOSFET HUAYI HY3210B with 100V 120A and Low On Resistance
Product OverviewThe HY3210P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high current capability (100V/120A) with a low on-resistance of 6.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and ...
Low RDS ON 5.7 Milliohm N Channel MOSFET HUAYI HY1906C2 Designed for High Frequency Power Conversion
Product OverviewThe HY1906C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 60V/70A rating with a low RDS(ON) of 5.7 m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring ...
High Cell Density Single N Channel Enhancement Mode MOSFET HUAYI HY1303C for Battery Pack Protection
Product OverviewThe HY1303C is a single N-Channel Enhancement Mode MOSFET featuring high cell density for low Rds(on). It is designed for applications requiring efficient power switching and is suitable for battery pack protection and power tools.Product AttributesBrand: Halogen Device Available ...
N channel MOSFET HUASHUO AO3416 featuring high cell density trench technology and 2KV ESD protection
Product Overview The AO3416 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This device meets RoHS and Green Product requirements, offering full function reliability. Key features include super low ...
Low Gate Charge P Channel MOSFET HXY MOSFET FDS4435BZ Suitable for Battery Protection and Switching
Product OverviewThe FDS4435BZ is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 2.5V. This device is ideal for battery protection and other switching applications.Product ...
Robust MOSFET HUAYI HYG017N10NS1TA 100V 330A with Avalanche Tested Reliability and Low On Resistance
Product OverviewThe HYG017N10NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a 100V/330A rating, low on-state resistance (RDS(ON)=1.6m typ. @VGS = 10V), and is 100% avalanche tested for ...
High Current N Channel Enhancement Mode MOSFET HUAYI HYG016N04NR1B with Lead Free RoHS Compliant Package
Product OverviewThe HYG016N04NR1/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It features a high continuous drain current of 240A and a low on-resistance of 1.4 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and ...
N Channel Enhancement Mode MOSFET HUAYI HYG023N04NR1P with Low RDS ON and RoHS Compliant Green Device
HYG023N04NR1P/B N-Channel Enhancement Mode MOSFET The HYG023N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, including Li-battery protection. It offers high performance with a low RDS(ON) of 2.2m(typ.) at VGS = 10V, 45V/179A rating, and 100% avalanche tested for ...
Power management device single n channel enhancement mode mosfet HUAYI HYG082N03LR1C1 rohs compliant
HYG082N03LR1C1 - Single N-Channel Enhancement Mode MOSFETThe HYG082N03LR1C1 is a single N-Channel enhancement mode MOSFET designed for power management and switching applications. It offers high performance with low on-resistance and is 100% avalanche tested for reliability. This device is available ...
N Channel Enhancement Mode MOSFET HUAYI HY3215W 150V 130A Low On Resistance TO 247A Package
Product OverviewThe HY3215W is an N-Channel Enhancement Mode MOSFET designed for high-power applications. It features a 150V/130A rating, low on-resistance of 11.5m (typ.) at VGS=10V, and is 100% avalanche tested for reliability. Available in Halogen Free and Green (RoHS Compliant) versions, it is ...
