Single FETs, MOSFETs

Product OverviewThe HXY70P03D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation down to 4.5V gate voltages. This device is ideal for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICSOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDProduct ID: HXY70P03DPackage: TO-252-2LTechnical SpecificationsParameterConditionsMin.Typ.Max.UnitVDS (Drain

Product Overview The HSS3N10 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements with full functional reliability. This device is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.

Product Overview The HSP8119 is a P-channel, 80V fast switching MOSFET designed for synchronous buck converter applications. It features high cell density, excellent RDS(ON), and low gate charge. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers excellent CdV/dt effect decline. It is manufactured using advanced high cell density Trench technology. Product Attributes Brand: HS-Semi Product Type: P-Channel MOSFET Technology: Trench

Product Overview The HSBB0903 series offers N-Channel and P-Channel Fast Switching MOSFETs designed for power management and DC motor control applications. These MOSFETs feature super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline, utilizing advanced high cell density Trench technology. They are available as Green Devices. Product Attributes Brand: HS-Semi Technology: Advanced high cell density Trench technology Certifications: Green Device

Product OverviewThe HYG180N10LS1P&B is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 100V/50A rating with low on-state resistance (RDS(ON) = 16.5m typ. @ VGS = 10V) and is 100% avalanche tested for reliability and ruggedness. Lead-free devices are available, complying with RoHS standards.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin: ChinaMateria

Product OverviewThe HYG020N06LS1P/B is a high-performance N-Channel Enhancement Mode MOSFET from Huayi Microelectronics. It features a low on-resistance (RDS(ON) = 2 m typ. at VGS = 10V), high continuous drain current (250A), and is 100% avalanche tested. Designed for reliability and ruggedness, it is available in Halogen Free and Green (RoHS Compliant) versions. This MOSFET is suitable for demanding applications such as DC-DC switched-mode power supplies, battery management

Product OverviewThe IRLML6344TRPBF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDOrigin: Shenzhen, ChinaMaterial: N-Channel Enhancement Mode MOSFETPackage: SOT-23Marking: A09TTechnical SpecificationsParameterSymbolC

Product OverviewThe HYG025N06LS2C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a low on-state resistance of 2.3 m (typ.) at VGS = 10V and 3.5 m (typ.) at VGS = 4.5V, a continuous drain current of 160A, and is 100% avalanche tested for reliability. This robust device is suitable for high frequency point-of-load synchronous buck converters and power tool applications. Halogen-free devices are available and compliant with

Product OverviewThe SCT3030KLHRC11 is a 3rd Generation SiC Power MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It features N-Channel Enhancement Mode operation, high blocking voltage with low on-resistance, and high-speed switching with low capacitances. Its fast intrinsic diode offers low reverse recovery. This RoHS compliant and halogen-free component enhances system efficiency, reduces cooling requirements, increases power density, and allows for higher system

Product Overview The HSCB10P02 is a P-channel, 20V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology

Product Overview The HSCE2530 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell

Product Overview The HSU6901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDS(ON) and gate charge characteristics. Designed for synchronous buck converter applications, these MOSFETs meet RoHS and Green Product requirements and are 100% EAS guaranteed with full functional reliability. They offer super low gate charge and excellent CdV/dt effect decline due to advanced high cell density Trench technology.

Product OverviewThe HY1103S is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V/11A rating with low on-resistance of 9.5m (typ.) at VGS = 10V and 11.5m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYMEXAOrigin: China (Xi'an Huayi Microelectronics Co., Ltd.)Material: Halogen

Product OverviewThe HYG180N10LS1P is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features a 100V/50A rating with low on-resistance (RDS(ON)= 16.5m typ. @ VGS = 10V). This device is 100% avalanche tested, reliable, and rugged, with lead-free (RoHS compliant) options available. It is suitable for high-frequency point-of-load synchronous buck converters and power tool applications.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.

Product OverviewThe AOD4184-HXY is an N-Channel Enhancement Mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. It is suitable for battery protection and other switching applications.Product AttributesBrand: HUA XUAN YANG ELECTRONICS CO.,LTDOrigin: ShenzhenModel: AOD4184-HXYPackage: TO-252-2L (TO-252-2(DPAK))Marking: HXY OD4184 xxxxxxTechnical SpecificationsParameterSymbolCondition

Product OverviewThe HYG065N15NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high drain-source voltage of 150V and a continuous drain current of 165A, with a low on-state resistance of 6.0m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available, making it compliant with RoHS standards. It is suitable for use in Uninterruptible Power Supplies and

HY045N10P/B N-Channel Enhancement Mode MOSFET The HY045N10P/B is an N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It offers high performance with a voltage rating of 100V and a continuous drain current of 120A. Key advantages include a low on-state resistance of 4.2m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. Lead-free and green devices are available, compliant with RoHS standards. Product

Product OverviewThe IRLR7843TRPBF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and general switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDOrigin: ShenzhenProduct ID: IRLR7843TRPBFPack Marking: 120N03 XXXX YYYYPackage: TO-252-2L (TO-252-2(DPAK))Certifications: Not

Product Overview The HSU80N03 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. Key features include super low gate charge and excellent CdV/dt effect decline, enabled by advanced high cell density trench technology. Product Attributes Brand: HS-Semi Product Type:

Product Overview The HSSK8811 is a dual P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a green device. Key features include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Product Type: Dual P