Single FETs, MOSFETs
P channel MOSFET HUASHUO HSS1P25 250V fast switching device with high cell density trench technology
Product Overview The HSS1P25 is a P-channel, 250V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
Durable Power MOSFET HUAYI HYG055N10NS1P with 100V Drain Source Voltage and Halogen Free Construction
Product OverviewThe HYG055N10NS1P/B is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features high performance with a low on-state resistance (RDS(ON) = 4.3 m typ. @ VGS = 10V), 100V drain-source voltage, and 130A ...
Switching and Motor Control Applications Using HUAYI HYG065N07NS1B N Channel Enhancement Mode MOSFET
Product OverviewThe HYG065N07NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems and motor control. It features low on-resistance, high continuous drain current, and is 100% avalanche tested for reliability and ruggedness. Lead...
Load Switch N Channel MOSFET HUASHUO HSS3404A with Excellent Switching Performance and Low Gate Charge
Product Overview The HSS3404A is a high cell density trenched N-channel MOSFET designed for fast switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full functional reliability. Key features include super low gate ...
N Channel MOSFET HUAYI HY1908P with 90 Amp Continuous Current and 25 Volt Gate Source Voltage Rating
Product OverviewThe HY1908 is a N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with an 80V/90A rating, low on-resistance of 7m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. Lead-free ...
Power Management and Motor Control N Channel MOSFET HUAYI HYG050N08NS1C2 Featuring Low On Resistance
HYG050N08NS1C2 N-Channel Enhancement Mode MOSFETThe HYG050N08NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a low on-resistance of 4.1 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable ...
High Voltage N Channel MOSFET HUAYI HY1915P with 150V Breakdown and 15 Milliohm On State Resistance
Product OverviewThe HY1915P/B V2.0 is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a high breakdown voltage of 150V and a continuous drain current of 85A, with a low on-state resistance of 15m (typ.) at VGS = 10V. This device is 100% avalanche tested, ...
N Channel Enhancement Mode MOSFET Model HYG060N08NS1P for Power Management and Switching Systems
Product OverviewThe HYG060N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features low on-resistance (RDS(ON)=5.5 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-free and ...
N Channel Enhancement Mode MOSFET 68V 80A Current Rating HUAYI HYG067N07NQ1P Lead Free and Green Device
N-Channel Enhancement Mode MOSFETThis N-Channel Enhancement Mode MOSFET features a high voltage and current rating (68V/80A) with a low on-resistance (6.5m typ. @VGS = 10V). It is 100% avalanche tested, reliable, rugged, and available in lead-free and green (RoHS compliant) versions. Ideal for ...
Power Switching MOSFET HUAYI HYG050N08NS1P N Channel Enhancement Mode for Motor Control and Inverter
Product OverviewThe HYG050N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features high performance with low on-resistance (RDS(ON)= 4 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged ...
High Cell Density Trench MOSFET HUASHUO HSM3056 with Operation and Low Gate Charge Characteristics
Product Overview The HSM3056 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and ...
N Channel Enhancement Mode MOSFET HUAYI HY3708B with 80V Voltage and RoHS Compliant Lead Free Design
Product OverviewThe HY3708 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 80V and a continuous drain current of 170A. Key features include a low on-resistance of 3.8 m (typ.) at VGS=10V, reliability, and ...
Power MOSFET Huixin H3N80D with 800 Volt Drain to Source Voltage and Wide Operating Temperature Range
Product OverviewThe H3N80D is an N-Channel Enhancement Mode MOSFET designed for various power applications. It offers robust thermal characteristics, including a low junction-to-case thermal resistance, and a wide operating junction temperature range. Its maximum ratings support high voltage and ...
Low RDS ON dual N channel MOSFET HUASHUO HSO8205 20V fast switching device ideal for Lithium ion battery packs
Product Overview The HSO8205 is a dual N-channel, 20V fast switching MOSFET designed with advanced high cell density Trench technology. It features low RDS(ON) and super low gate charge, making it suitable for Lithium-ion battery pack applications. The HSO8205 meets RoHS and Green Product requiremen...
Battery Protection MOSFET HUAYI HY0C20C Dual N Channel Device with Low Rds on and Halogen Free Build
Product OverviewThe HY0C20C is a Dual N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low Rds(on) due to its high cell density, making it suitable for battery pack protection and power tools. This device is available as a halogen-free option.Product ...
Trench Technology N Channel MOSFET HUASHUO HSBA90N15 with 150V Drain Source Voltage and Green Device
Product Overview The HSBA90N15 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring a 150V drain-source voltage and a super low RDS(ON), it offers advanced high cell density Trench technology for efficient power management. This MOSFET is 100% EAS guaranteed and ...
Low RDS ON Dual P-Channel Enhancement Mode MOSFET HXY MOSFET SI4925BDY-T1-E3-HXY for PWM Applications
SI4925BDY-T1-E3 Dual P-Channel Enhancement Mode MOSFET The SI4925BDY-T1-E3 is a Dual P-Channel Enhancement Mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications, particularly PWM applicatio...
Power Switching Device HUAYI HY1904B MOSFET with Low On Resistance and High Avalanche Energy Rating
Product OverviewThe HY1904P/B/M is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features a high continuous drain current of 90A and a low on-resistance of 4.7m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable...
Rugged Construction MOSFET HUAYI HYG011N04LS1C2 Suitable for DC DC Converters and Switching Circuits
Product OverviewThe HYG011N04LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features low on-resistance, 100% avalanche testing, and a reliable, rugged construction. Halogen-free options are available.Product ...
Power Distribution with HXY MOSFET AOTL66912 N SGT Enhancement Mode MOSFET Featuring Low Gate Charge
Product OverviewThe AOTL66912 N-SGT Enhancement Mode MOSFET utilizes advanced SGT MOSFET technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. It is specifically designed for enhanced ruggedness, making it suitable for applications such as ...
