Single FETs, MOSFETs

Product OverviewThe HY1515P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 150V/50A rating and a low on-resistance of 28m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green options available. It is suitable for use in Uninterruptible Power Supplies and other power switching circuits.Product AttributesBrand: HY (Huayi)Origin: ChinaCertifications: RoHS

Product OverviewThe HYG032N08NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a low RDS(ON) of 2.8m (typ.) at VGS = 10V and a continuous drain current of 185A. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green (RoHS compliant) options available. It is suitable for Uninterruptible Power Supply (UPS) systems and other power switching applications.Product AttributesBrand:

Product Overview The HSBA3903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA3903 series meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS-Semi Certifications: RoHS, Green Device Available

Product OverviewThe HUAXUANYANG NTHL045N065SC1 is a SiC Power MOSFET, N-Channel Enhancement Mode device featuring 3rd generation SiC MOSFET technology. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. The optimized package includes a separate driver source pin. Benefits include reduced switching losses, minimized gate ringing, higher system efficiency, reduced cooling

Product OverviewThe H14N10FBL is an N-Channel Power MOSFET designed for high power and current handling capabilities. It is suitable for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. This lead-free product is compliant with EU RoHS 2.0 and manufactured using a green molding compound as per IEC 61249 standard.Product AttributesBrand: 6GMKPackage: PDFN5*6-8LCertifications: Lead Free, EU RoHS 2.0, IEC 61249Material:

Product OverviewThe HY029N10P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications, including Uninterruptible Power Supplies. It offers high performance with a 100V/270A rating, low on-resistance of 2.6m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYMExaOrigin: China (Huayi Microelectronics Co., Ltd.)Material:

Product Overview The HSK10N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed and approved for full function reliability, making it suitable for demanding industrial applications. Product Attributes Brand: HS-Semi Product Type: N-Ch Fast Switching MOSFETs

Product Overview The HSM6113 is a P-channel, 60V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key benefits include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product OverviewThe HYG016N04LS1P/B is an N-Channel Enhancement Mode MOSFET designed for power management applications. It features low on-resistance, high continuous drain current capability, and is 100% avalanche tested for reliability. Available in lead-free and green (RoHS compliant) versions, it is suitable for DC/DC power management, battery management, and inverter systems.Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd.)Origin: ChinaMaterial: Lead-Free

Product OverviewThe HYG090N06LS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It offers excellent RDS(ON) characteristics, 100% avalanche testing, and a reliable, rugged design. Available in RoHS compliant and halogen-free options, it is suitable for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems.Product AttributesBrand: HymexaOrigin: ChinaCertifications:

Product Overview The HSP6115 is a P-channel, 60V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. The device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Product Type: P

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFETThe HYG013N03LS1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and a rugged construction. Halogen-free devices are available, complying with RoHS standards.Product AttributesBrand: HYM (Huayi Microelectronics Co.,

N-Channel Enhancement Mode MOSFET The HYG065N15NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key features including 150V/165A rating, low on-resistance of 6.2m (typ.) at VGS = 10V, and 100% avalanche tested. This device is available in lead-free and green (RoHS compliant) versions, making it suitable for environmentally conscious designs. Its rugged construction ensures

N-Channel Enhancement Mode MOSFET The HY1515D is a reliable and rugged N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low RDS(ON) of 29 m (typ.) at VGS = 10V and is 100% avalanche tested. This device is available in Halogen-Free and Green (RoHS Compliant) versions, making it suitable for environmentally conscious designs. Applications include Uninterruptible Power Supply (UPS) systems and general power switching. Product Attributes

Product Overview The HSU50N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology. Product

Product OverviewThe HY1001P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a 70V/80A rating, low RDS(ON) of 7.2m(typ.)@VGS = 10V, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYMEXTAOrigin: ChinaMaterial: Lead-Free and Green Devices Available

HY5608W/A N-Channel Enhancement Mode MOSFETThe HY5608W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 80V and a continuous drain current of 360A (TC=25C). Key advantages include low on-state resistance (RDS(ON)=1.5 m typ. @ VGS=10V), reliability, and ruggedness. This product is available in lead-free and green (RoHS compliant) versions.Product

Product OverviewThe HYG190P13NA1/B is a P-Channel Enhancement Mode MOSFET designed for portable equipment and battery-powered systems. It features a high drain-source voltage of -125V and a continuous drain current of -72A, with a low on-state resistance of 18 m (typ.) at VGS = -10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin:

Product Overview The HSW6800 is a dual N-channel fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it ideal for various small power switching and load switch applications. This product meets RoHS and Green Product requirements and is available as a green device. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Model: HSW6800 Technology:

HYG006N04LS1TA N-Channel Enhancement Mode MOSFET The HYG006N04LS1TA is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a low on-resistance of 0.45 m (typ.) at VGS = 10V and 0.61 m (typ.) at VGS = 4.5V, along with 100% avalanche testing for enhanced reliability and ruggedness. Halogen-free and RoHS compliant options are available. Product Attributes Brand: HYG (Huayi Microelectronics