Single FETs, MOSFETs

Product OverviewThe HYG053N10NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications, motor control and drive, and battery management. It offers high performance with a 100V/95A rating and a low RDS(ON) of 5.2m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS Compliant).Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd.)Origin: ChinaCertifications: RoHS Compliant

Product Overview The HSS2307 is a P-channel, 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is available as a green device. It exhibits excellent Cdv/dt effect decline. Product Attributes Brand: HSS Product Type: P-Ch MOSFET Voltage Rating: 20V Switching Speed: Fast Certifications

Product OverviewThe HYG025N04NR1C2 is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON) = 1.7 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free options are available. This MOSFET is suitable for load switch and battery protection applications.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin: ChinaMaterial: MOSFETCertifications: RoHS

Product Overview The HSSK6303 is a dual N-channel 20V fast switching MOSFET designed to offer an optimal balance of rapid switching speeds, low on-resistance, and cost-effectiveness. It meets RoHS and Green Product requirements with full functional reliability. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology, making it suitable for applications requiring efficient power management. Product

Product OverviewThe HYG030N03LQ1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) of 2.4m typ. at VGS = 10V and 3.5m typ. at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. This MOSFET is suitable for battery protection and load switch applications.Product AttributesBrand: HYG (HUAYI)Origin: ChinaCertifications: RoHS

HSH3119 P-Channel 30V Fast Switching MOSFET Product Overview The HSH3119 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge performance in synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology, making it

Product OverviewThe HYG060P04LQ1D/U/V is a P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters, including battery protection. It offers high performance with a low RDS(ON) of 5.8 m (typ.) at VGS = -10V and 8.5 m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYMEXTAOrigin: ChinaCertifications:

Product Overview The HSBB60P02 is a P-channel, 20V fast switching MOSFET from HS Semiconductor, featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements with full function reliability approval. Product Attributes Brand: HS Semiconductor Product Type: P-Channel MOSFET Certifications: RoHS, Green Product Technology: Trench

Product OverviewThe HYG016N10NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features high current handling capabilities (100V/370A) and low on-resistance (RDS(ON)=1.35m typ. @VGS = 10V). The device is 100% avalanche tested, offering reliability and ruggedness. Halogen-free and RoHS compliant options are available.Product AttributesBrand: HYGOrigin: ChinaCertifications: RoHS Compliant, Halogen

Product Overview The HSK0008 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include super low gate charge and excellent Cdv/dt effect decline, attributed to its advanced high cell density Trench technology.

Product OverviewThe HY3906P/B is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a 60V/190A rating with a low on-resistance of 4.0m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions. It is ideal for power management in inverter systems and switching applications, offering 100% avalanche tested reliability.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS

Product Overview The HSW2N15 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and offers features such as super low gate charge and excellent Cdv/dt effect decline, thanks to its advanced high cell density trench technology. It is a green device available with full function reliability approved. Product

Product Overview The HSBA6901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for most synchronous buck converter applications. The HSBA6901 series meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full functional reliability approval. Key advantages include super low gate charge and excellent decline in Cdv

Product Overview The HSCC8233 is a dual N-channel fast switching MOSFET featuring low drain-source ON resistance and robust ESD protection. Designed for Lithium-ion battery pack applications, this trenched MOSFET meets RoHS and Green Product requirements, offering full function reliability. It is available as a green device. Product Attributes Brand: HS-Semi Device Type: Dual N-Channel Fast Switching MOSFET Certifications: RoHS Compliant, Green Product Protection: ESD

Product OverviewThe HYG161P10LA1S is a P-Channel Enhancement Mode MOSFET from Huayi Microelectronics, designed for power management and load switching applications. It features a -100V/-6A rating, low on-resistance of 135 m (typ.) at VGS = -10V, and 100% avalanche tested for reliability. Halogen-free and RoHS compliant devices are available.Product AttributesBrand: HYM (Huayi Microelectronics)Origin: ChinaCertifications: RoHS Compliant, Halogen-FreePackage Type: SOP

Product Overview The HSM4410 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology. Product Attributes Brand: HS-Semi Product Series:

Product OverviewThe HYG038N03LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers high performance with a low RDS(ON) of 3.5 m (typ.) at VGS = 10V and 4.9 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Package Type: TO-252-2LCertifications

Product OverviewThe HYG025N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) of 2.1 m (typ.) at VGS = 10V and 3.2 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free options are available, complying with RoHS standards. This MOSFET is ideal for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC

Product OverviewThe HY3203C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management for DC/DC converters. It offers a low on-resistance of 1.9m (typ.) at VGS = 10V and 2.5m (typ.) at VGS = 4.5V, with a drain-source voltage of 30V and a continuous drain current of 120A. This device is 100% avalanche tested, reliable, and rugged. Halogen-free options are available.Product AttributesBrand: HY (HUAYI)Origin: ChinaMaterial: Halogen

Product OverviewThe HYG025N06LS1P is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and a rugged construction. Halogen-free devices are available, complying with RoHS standards. This MOSFET is suitable for high frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power