Single FETs, MOSFETs
N Channel Enhancement Mode MOSFET HUAYI HYG025N06LS1P Designed for High Frequency Power Applications
Product OverviewThe HYG025N06LS1P is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and a rugged construction. Halogen-free devices are ...
Power MOSFET HUAYI HY1420C2 with 31A Drain Current and RoHS Compliant Halogen Free Packaging Options
Product OverviewThe HY1420C2 is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a breakdown voltage of 200V and a continuous drain current of 31A. Key advantages include low on-state resistance (RDS(ON)=57m typ. @ VGS = 10V), 100% ...
complementary MOSFET HUASHUO HSBA1641 with trench technology and full function reliability approval
Product Overview The HSBA1641 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDS(ON) and gate charge characteristics. These MOSFETs are designed for synchronous buck converter applications and meet RoHS and Green Product requiremen...
Low gate charge trenched P channel MOSFET HUASHUO HSM4313 designed for synchronous buck converters
Product Overview The HSM4313 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, ensuring efficient performance. This device meets RoHS and Green Product requirements and is 100% EAS ...
Low On Resistance N Channel MOSFET HUAYI HY5012W 125V 300A for Power Management in Inverter Systems
Product OverviewThe HY5012W/A is a 125V/300A N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers advantages such as low on-state resistance (RDS(ON)=2.9 m typ. @ VGS=10V), avalanche rating, and a reliable, rugged design. Lead-free and green devices are ...
HXY MOSFET AON7401 HXY P Channel MOSFET Featuring Low Gate Charge and Operation at 4.5V Gate Voltage
Product OverviewThe AON7401-HXY is a P-Channel Enhancement Mode MOSFET featuring excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications, offering high power and current handling capability.Product ...
SiC Power MOSFET HXY MOSFET DMWS120H100SM4-HXY 1200V 32A N Channel Enhancement Mode Device
Product OverviewThis 3rd generation SiC Power MOSFET, the DMWS120H100SM4 from HUAXUANYANG ELECTRONICS CO.,LTD, offers high performance with a 1200V drain-source voltage and low on-resistance. It features high-speed switching capabilities, a fast intrinsic diode with low reverse recovery, and an ...
High cell density complementary MOSFETs HUASHUO HSU3903 designed for power switching and reliability
Product Overview The HSU3903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density, offering excellent RDSON and gate charge characteristics. These MOSFETs are designed for synchronous buck converter applications and meet RoHS and Green Product ...
N Channel MOSFET HUASHUO HSU0096 Featuring Fast Switching High Pulsed Current and RoHS Compliance
N-Channel Fast Switching MOSFET - HSU0096 The HSU0096 is a high-performance N-Channel Fast Switching MOSFET designed for a wide variety of applications. Leveraging SGT technology, it offers excellent Rds(on), low gate charge, and fast switching characteristics. This device is 100% EAS Guaranteed and ...
Rugged N Channel MOSFET HUAYI HY5204W Suitable for Inverter Systems and High Temperature Applications
Product OverviewThe HY5204W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers avalanche rated, reliable, and rugged performance, making it suitable for demanding applications. This product is RoHS compliant, lead-free, and halogen-free.Product ...
power switching P channel MOSFET HUASHUO HSU5P20 with super low gate charge and green product status
Product Overview The HSU5P20 is a P-channel, 200V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
Dual P channel mosfet HSW6815 featuring fast switching and 20V drain source voltage for load switch
Product Overview The HSW6815 is a dual P-channel, 20V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. The HSW6815 meets RoHS and Green Product ...
Low On Resistance N Channel MOSFET HUAYI HYG035N06LS1D with 65V Drain Source Voltage and 150A Current
Product OverviewThe HYG035N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features high current capability (150A continuous), low on-resistance (3.5 m typ. at VGS=10V), and is 100% avalanche tested for reliability. This device is suitable for load ...
Dual N Channel 60V Fast Switching MOSFET HUASHUO HSBB6214 with Low Gate Charge and RoHS Compliant Green Product
Product Overview The HSBB6214 is a dual N-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
complementary MOSFET HUASHUO HSBA4909 with super low gate charge and excellent switching performance
Product Overview The HSBA4909 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA4909 series is RoHS and ...
HYG210P06LQ1C2 MOSFET Single P Channel 60 Volt 40 Amp Low On Resistance for Switching Application
Product OverviewThe HYG210P06LQ1C2 is a single P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers robust performance with a -60V/-40A rating, low on-resistance of 20m(typ.) at VGS = -10V, and 100% avalanche tested for reliability...
Low gate charge N Channel MOSFET HUASHUO HSBL020N08 with excellent RDS ON and switching performance
Product Overview The HSBL020N08 is a high cell density SGT N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous rectification. This product meets RoHS and Halogen-Free compliant requirements and is 100% EAS ...
Switching MOSFET HUAYI HY4008NA2B with 200 Ampere Current Rating and Avalanche Tested Reliability
Product OverviewThe HY4008NA2P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low on-resistance of 3.5 m (typ.) at VGS = 10V, 80V/200A rating, and is 100% avalanche tested for ...
synchronous buck converter dual N channel MOSFET HUASHUO HSM1562 with trench technology and RoHS certification
Product Overview The HSM1562 is a dual N-channel MOSFET featuring high cell density trenched technology, designed for excellent RDS(ON) and gate charge performance. It is ideally suited for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% ...
N Channel MOSFET HUAYI HY3404D 45V 147A Rating with Halogen Free and RoHS Compliant Options
Product OverviewThe HY3404D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a 45V/147A rating, low on-resistance (RDS(ON) of 3.1m typ. at VGS = 10V), 100% avalanche tested reliability, and is ...
