Single FETs, MOSFETs

Product OverviewThe HY1420C2 is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a breakdown voltage of 200V and a continuous drain current of 31A. Key advantages include low on-state resistance (RDS(ON)=57m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. This device is also available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYMEXA (implied by URL

Product Overview The HSBA1641 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDS(ON) and gate charge characteristics. These MOSFETs are designed for synchronous buck converter applications and meet RoHS and Green Product requirements. They are 100% EAS guaranteed with full function reliability approved, offering super low gate charge and excellent CdV/dt effect decline due to advanced high cell density

Product OverviewThe HY5012W/A is a 125V/300A N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers advantages such as low on-state resistance (RDS(ON)=2.9 m typ. @ VGS=10V), avalanche rating, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HY(Huayi)Origin: ChinaCertifications: RoHS Compliant, Lead Free, Green Devices AvailableTechnical SpecificationsPart

Product Overview The HSM4313 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, ensuring efficient performance. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent Cdv/dt effect decline, leveraging advanced high cell density trench

Product OverviewThe AON7401-HXY is a P-Channel Enhancement Mode MOSFET featuring excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications, offering high power and current handling capability.Product AttributesBrand: HUAXUANYANG HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDProduct ID: AON7401-HXYPack Marking: 50P03 xxx yyyyPackage: DFN5X6-8LCertifications: Lead free

Product OverviewThis 3rd generation SiC Power MOSFET, the DMWS120H100SM4 from HUAXUANYANG ELECTRONICS CO.,LTD, offers high performance with a 1200V drain-source voltage and low on-resistance. It features high-speed switching capabilities, a fast intrinsic diode with low reverse recovery, and an optimized package with a separate driver source pin for improved system efficiency and power density. Applications include renewable energy systems, EV battery chargers, high voltage

Product Overview The HSU3903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density, offering excellent RDSON and gate charge characteristics. These MOSFETs are designed for synchronous buck converter applications and meet RoHS and Green Product requirements. They are 100% EAS guaranteed with full function reliability approval, providing advantages such as super low gate charge and excellent CdV/dt effect decline through advanced

N-Channel Fast Switching MOSFET - HSU0096 The HSU0096 is a high-performance N-Channel Fast Switching MOSFET designed for a wide variety of applications. Leveraging SGT technology, it offers excellent Rds(on), low gate charge, and fast switching characteristics. This device is 100% EAS Guaranteed and compliant with RoHS and Halogen-Free standards. Product Attributes Brand: HS-Semi Technology: SGT Compliance: RoHS and Halogen-Free Technical Specifications Symbol Parameter

Product OverviewThe HY5204W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers avalanche rated, reliable, and rugged performance, making it suitable for demanding applications. This product is RoHS compliant, lead-free, and halogen-free.Product AttributesBrand: HYNIX (implied by HY)Certifications: RoHS Compliant, Halogen Free, Green DeviceMaterial: Molding compounds, die attach material, and tin platingTechnical Specificatio

Product Overview The HSU5P20 is a P-channel, 200V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device. Product

Product Overview The HSW6815 is a dual P-channel, 20V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. The HSW6815 meets RoHS and Green Product requirements and features super low gate charge and excellent Cdv/dt effect decline. It is available as a Green Device. Product Attributes Brand: HSW Product Type: Dual P-Channel MOSFET

Product OverviewThe HYG035N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features high current capability (150A continuous), low on-resistance (3.5 m typ. at VGS=10V), and is 100% avalanche tested for reliability. This device is suitable for load switching and motor drives in electric tools.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS compliant, Halogen-Free (Green)Package Type: TO-252-2LTechnical SpecificationsP

Product Overview The HSBA4909 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA4909 series is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability approval. Product Attributes Brand: HS (HS-Semi) Certifications: RoHS, Green Product Key Features:

Product Overview The HSBB6214 is a dual N-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Product

Product OverviewThe HYG210P06LQ1C2 is a single P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers robust performance with a -60V/-40A rating, low on-resistance of 20m(typ.) at VGS = -10V, and 100% avalanche tested for reliability. This device is available in Halogen-free and Green (RoHS Compliant) versions, making it suitable for environmentally conscious designs.Product AttributesBrand: HYG (HUAYI)Origin:

Product Overview The HSBL020N08 is a high cell density SGT N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous rectification. This product meets RoHS and Halogen-Free compliant requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology. Product

Product OverviewThe HY4008NA2P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low on-resistance of 3.5 m (typ.) at VGS = 10V, 80V/200A rating, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYMExaProduct Series: HY4008Material: Lead-Free and

Product OverviewThe HY3404D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a 45V/147A rating, low on-resistance (RDS(ON) of 3.1m typ. at VGS = 10V), 100% avalanche tested reliability, and is available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYCertifications: RoHS Compliant, Halogen Free, Green Devices AvailableMaterial: Molding

Product Overview The HSM1562 is a dual N-channel MOSFET featuring high cell density trenched technology, designed for excellent RDS(ON) and gate charge performance. It is ideally suited for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It offers super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Product Type: Dual N

Product OverviewThe HYG800P10LR1S is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for power management and load switching applications. It features a -100V/-8A rating, low on-resistance (RDS(ON) of 72 m typ. @ VGS = -10V), 100% avalanche tested, and is available in halogen-free (RoHS compliant) versions. This device offers reliability and ruggedness for DC/DC power management and load switching scenarios.Product AttributesBrand: HymexaOrigin: ChinaCertifications: