Single FETs, MOSFETs
power management mosfet huayi hyg072n10ls1p n channel enhancement mode 100 volt 80 amp rating device
HYG072N10LS1P N-Channel Enhancement Mode MOSFETThe HYG072N10LS1P is a 100V/80A N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and general power management for DC/DC applications. It offers low on-state resistance (RDS(ON) = 6.7 m typ. @ VGS = ...
Switching MOSFET HUAYI HYG007N03LS1C2 Single N Channel Enhancement Mode with Low On State Resistance
Product OverviewThe HYG007N03LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low RDS(ON) of 0.63m (typ.) at VGS = 10V and 0.96 m (typ.) at VGS = 4.5V, along with 100% avalanche testing ...
power management component Huixin BC2302 N Channel Enhancement Mode Power MOSFET with switching and low resistance
BC2302 N-Channel Enhancement Mode Power MOSFETThe BC2302 is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), offering high power and current handling capabilities. Ideal for battery protection, load ...
Dual N-Channel MOSFET HSBB4252 Featuring Fast Switching and Low On Resistance for Power Applications
Product Overview The HSBB4252 is a Dual N-Channel Fast Switching MOSFET designed for power management applications. It features 40V drain-source voltage, low on-resistance, and super low gate charge. Key advantages include 100% EAS guaranteed, excellent CdV/dt effect decline, and advanced high cell ...
Low gate charge N Channel MOSFET HUASHUO HSBA0096 designed for and robust performance in electronics
Product Overview The HSBA0096 is a fast-switching N-Channel MOSFET designed for high-efficiency applications. Leveraging SGT technology, it offers excellent Rds(on), low gate charge, and rapid switching capabilities. This device is suitable for a wide range of applications requiring reliable ...
Low On Resistance N Channel MOSFET HUAYI HYG025N06LS1D Suitable for High Frequency Power Applications
Product OverviewThe HYG025N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON) = 2.6 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. ...
P Channel MOSFET HUASHUO HSP80P10 with RoHS Certification and Excellent Gate Charge Characteristics
Product Overview The HSP80P10 is a P-Channel Fast Switching MOSFET designed with advanced trench technology, offering excellent RDS(ON) and gate charge. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability. This MOSFET is suitable for a wide variety ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG013N04NA1B6 with Construction and Battery Protection
Product OverviewThe HYG013N04NA1B6 is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-state resistance (RDS(ON)) of 1.1 m(typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. Halogen-free devices are also available. This ...
Lead free green compliant n channel mosfet HUAYI HY1906P featuring 6 milliohm on resistance for power management
Product OverviewThe HY1906P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 60V/120A rating and low on-resistance (RDS(ON) = 6.0 m typ. @ VGS=10V). This device is avalanche rated, reliable, and rugged. Lead-free and green ...
Dual N-Channel Enhancement Mode MOSFET HXY MOSFET IRF7103PBF-HXY with Low Gate Charge and Excellent RDS
Product OverviewThe IRF7103PBF is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, making it suitable for battery protection and other switching applications.Product ...
Low RDS ON 30V P channel MOSFET Huixin H4423P ideal for battery protection charge discharge circuits
Product OverviewThe H4423P is a 30V P-CHANNEL MOSFET featuring Trench Power MOSFET technology for low RDS(ON). It is RoHS and Halogen-Free compliant and is 100% UIS and Rg tested. This MOSFET is suitable for applications such as Notebook AC-in Load Switch and Battery Protection Charge/Discharge...
Low On Resistance N Channel Enhancement Mode MOSFET HUAYI HYG032N08NS1P Suitable for Inverter Systems
Product OverviewThe HYG032N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features a low on-resistance of 3 m (typ.) at VGS = 10V, 100% avalanche tested, and is available in lead-free and green (RoHS ...
High Cell Density Trenched P Channel MOSFET HUASHUO HSU6113 Suitable for Switching Applications
Product Overview The HSU6113 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and ...
Power Management N Channel MOSFET HUASHUO HSBA4050 Featuring 40V Voltage and High Current Capability
Product Overview The HSBA4050 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 40V drain-source voltage and high current capability, it is ideal for synchronous rectification in SMPS, DC/DC converters, and OR-ing applications. Its advanced trench technology, ...
High current 80A mosfet HUAYI HY1707P with 6 milliohm on resistance and RoHS compliant construction
Product OverviewThe HY1707 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 70V and a continuous drain current of 80A, featuring a low on-state resistance of 6m (typ.) at VGS=10V. This device is avalanche ...
SiC Power MOSFET N Channel HXY MOSFET HC3M001K170J with Avalanche Ruggedness and High Pulsed Current
HUAXUANYANG SiC Power MOSFET N-Channel Enhancement Mode The HUAXUANYANG HC3M001K170J is a SiC Power MOSFET designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and avalanche ruggedness. This product is ...
Synchronous buck converter MOSFET HUASHUO HSBB70N02 high cell density N channel device for switching
Product Overview The HSBB70N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
switching P channel MOSFET HUASHUO BSS84 with excellent C dv dt effect and 100 percent EAS guaranteed
Product Overview The BSS84 is a P-channel, 60V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is ...
RoHS compliant N channel MOSFET HUASHUO HSSN3134 with fast switching speed and super low gate charge
Product Overview The HSSN3134 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features fast switching speed, super low gate charge, high-side switching capability, low threshold voltage, and is ...
synchronous buck converter MOSFET HUASHUO HSU0018A featuring low gate charge and trench cell design
Product Overview The HSU0018A is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function ...
