Single FETs, MOSFETs

Product OverviewThe HYG007N03LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low RDS(ON) of 0.63m (typ.) at VGS = 10V and 0.96 m (typ.) at VGS = 4.5V, along with 100% avalanche testing for reliability and ruggedness. Halogen-free options are available.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS compliant, Halogen-FreeMaterial: Lead-free

BC2302 N-Channel Enhancement Mode Power MOSFETThe BC2302 is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), offering high power and current handling capabilities. Ideal for battery protection, load switching, and power management applications.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: UL 5Technical

Product Overview The HSBB4252 is a Dual N-Channel Fast Switching MOSFET designed for power management applications. It features 40V drain-source voltage, low on-resistance, and super low gate charge. Key advantages include 100% EAS guaranteed, excellent CdV/dt effect decline, and advanced high cell density Trench technology. Ideal for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial sectors. Product Attributes

Product Overview The HSBA0096 is a fast-switching N-Channel MOSFET designed for high-efficiency applications. Leveraging SGT technology, it offers excellent Rds(on), low gate charge, and rapid switching capabilities. This device is suitable for a wide range of applications requiring reliable performance and robust characteristics. Key features include 100% EAS guaranteed, low static drain-source on-resistance, and compliance with RoHS and Halogen-Free standards. Product

Product OverviewThe HYG025N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON) = 2.6 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. This MOSFET is suitable for high frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems.Product AttributesBrand: HYGModel:

Product Overview The HSP80P10 is a P-Channel Fast Switching MOSFET designed with advanced trench technology, offering excellent RDS(ON) and gate charge. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability. This MOSFET is suitable for a wide variety of applications, including portable equipment and battery-powered systems, and features excellent CdV/dt effect decline. Product Attributes Brand: HS-SMEI Product Type: P-Channel

Product OverviewThe HYG013N04NA1B6 is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-state resistance (RDS(ON)) of 1.1 m(typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. Halogen-free devices are also available. This MOSFET is suitable for load switches and lithium battery protection boards.Product AttributesBrand: HYG (Huayi Microelectronics)Origin: ChinaCertifications: RoHS compliant (lead

Product OverviewThe IRF7103PBF is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, making it suitable for battery protection and other switching applications.Product AttributesBrand: HXYOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: SOP-8Marking: IRF7103PBFTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown

Product OverviewThe HY1906P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 60V/120A rating and low on-resistance (RDS(ON) = 6.0 m typ. @ VGS=10V). This device is avalanche rated, reliable, and rugged. Lead-free and green devices are available, complying with RoHS standards.Product AttributesBrand: HOOYIProduct Series: HY1906P/BCertifications: RoHS Compliant, Lead Free, Green Devices AvailableOrigi

Product OverviewThe HYG032N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features a low on-resistance of 3 m (typ.) at VGS = 10V, 100% avalanche tested, and is available in lead-free and green (RoHS compliant) versions for reliable and rugged performance.Product AttributesBrand: HYMOrigin: China (Huayi Microelectronics Co., Ltd.)Certifications: RoHS Compliant, Lead-Free, Green

Product OverviewThe H4423P is a 30V P-CHANNEL MOSFET featuring Trench Power MOSFET technology for low RDS(ON). It is RoHS and Halogen-Free compliant and is 100% UIS and Rg tested. This MOSFET is suitable for applications such as Notebook AC-in Load Switch and Battery Protection Charge/Discharge.Product AttributesBrand: H4423PCertifications: RoHS and Halogen-Free ComplaintTesting: 100% UIS Tested, 100% Rg TestedTechnical SpecificationsParametersSymbolMinTypMaxUnitsConditionsDr

Product Overview The HSU6113 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench

Product Overview The HSBA4050 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 40V drain-source voltage and high current capability, it is ideal for synchronous rectification in SMPS, DC/DC converters, and OR-ing applications. Its advanced trench technology, low gate charge, and RoHS and Halogen-Free compliance make it a reliable choice for demanding power management solutions. Product Attributes Brand: HS-Semi Model: HSBA4050 Channel

Product OverviewThe HY1707 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 70V and a continuous drain current of 80A, featuring a low on-state resistance of 6m (typ.) at VGS=10V. This device is avalanche rated, reliable, and rugged, with lead-free and green device options available (RoHS compliant).Product AttributesBrand: HY (Hymex)Certifications: RoHS Compliant, Lead Free, Green

HUAXUANYANG SiC Power MOSFET N-Channel Enhancement Mode The HUAXUANYANG HC3M001K170J is a SiC Power MOSFET designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and avalanche ruggedness. This product is suitable for solar inverters, switch mode power supplies, auxiliary power supplies, and smart meters. Product Attributes Brand: HUAXUANYANG Model: HC3M001K170J Origin: Shenzhen, China

Product Overview The HSBB70N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key features include super low gate charge, suitability for battery protection, and power management. Product Attributes

Product Overview The BSS84 is a P-channel, 60V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi (implied from URL) Channel Type: P-Channel

Product Overview The HSSN3134 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features fast switching speed, super low gate charge, high-side switching capability, low threshold voltage, and is ESD protected up to 2KV. This RoHS and Green Product compliant MOSFET is approved for full function reliability. Product Attributes Brand: HS-Semi Product Type: N-Channel MOSFET

Product Overview The HSU0018A is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology. Product Attributes Brand: HSU Product Type: N-ch

Product OverviewThe HYG050N13NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 135V and a continuous drain current of 200A, with a low on-resistance of 4.0m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS Compliant). It is suitable for use in Uninterruptible Power Supplies and other power switching applications