Single FETs, MOSFETs

Product OverviewThe HYG012N03LR1TA is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications. It features a low on-resistance of 0.7 m (typ.) at VGS = 10V and 1.0 m (typ.) at VGS = 4.5V, a high continuous drain current of 380A, and is 100% avalanche tested for reliability. This MOSFET is also available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYG (Huayi Microelectronics)Origin: ChinaCertifications: RoHS

Product OverviewThis product line offers a range of semiconductor components designed for various electronic applications. They are compliant with RoHS and Halogen-free standards, meeting stringent environmental requirements. The products are suitable for high-temperature applications, including lead-free peak reflow temperatures.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Molding compounds, die attach materials, tin plateColor: Not specifiedCertifica

Product Overview The HSK3400 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements, featuring advanced high cell density Trench technology, super low gate charge, and excellent Cdv/dt effect decline. It is available as a Green Device. Product Attributes Brand: HS

Product Overview The HSH3024 is a high cell density trenched N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density Trench technology. Product Attributes Brand:

Product Overview The HSK6008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This fast-switching MOSFET meets RoHS and Green Product requirements and offers features such as super low gate charge and excellent CdV/dt effect decline, making it suitable for various power management solutions. Product Attributes Brand: HS-Semi Product Type: N-Channel MOSFET Certifications: RoHS,

Product OverviewThe H12N90 is a high-performance N-Channel MOSFET designed for power switching applications. It features low gate charge, low Crss, and is 100% avalanche tested, making it suitable for demanding applications. This RoHS compliant device offers robust performance and reliability.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: RoHS compliant, ULTechnical SpecificationsSymbolParameterTest

Product Overview The HSX120N20 is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It is designed for power switching applications and offers an excellent Cdv/dt effect decline due to its advanced high cell density trench technology. Product

Product Overview The HSCE4117 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device. Product

Product OverviewThe HYG013N04NR1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for demanding applications. It features a high continuous drain current of 377A and a low on-resistance of 1.1 m (typ.) at VGS = 10V, making it ideal for load switching and lithium battery protection boards. This MOSFET is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available.Product AttributesBrand: HymexaOrigin: ChinaCertifications:

Product Overview The HSH0129 is a P-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It is suitable for DC/DC converters, power tool applications, and offers fast switching speed with advanced high cell density Trench technology. This device is 100% EAS guaranteed and available as a Green Device. Product Attributes Brand: HSH Type: P-Channel MOSFET Voltage Rating: 100V Switching Speed: Fast Technology:

Product OverviewThe HOOYI HY3606P/B is an N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. Key features include a 60V breakdown voltage, 162A continuous drain current, and low on-state resistance (RDS(ON)). It is suitable for inverter systems and switching applications.Product AttributesBrand: HOOYIProduct Series: HY3606P

Product Overview The HSBA6066 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced Trench MOS Technology, it offers low gate charge and low RDS(ON), making it ideal for demanding power management tasks. This device is 100% EAS guaranteed and available in a Green Device option. Key applications include motor control, DC/DC converters, and synchronous rectifier circuits. Product Attributes Brand: HS-Semi Technology: Advanced Trench

Product Overview The HSU6004 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics. This component meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product OverviewThe HYG018N10NS1B6 is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a 100V/322A rating with a low RDS(ON) of 1.4m(typ.)@VGS=10V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen-Free and Green (RoHS Compliant) versions. Ideal for energy storage, battery protection, and battery-operated tools.Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd.)Origin: ChinaCertifications:

Product Overview The HSBA90N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key benefits include super low gate charge and suitability for battery protection and power management systems. Product

Product Overview The HSM0056 is a high-performance N-Channel MOSFET designed for fast switching applications. It features 100V drain-source voltage and low on-resistance, making it suitable for portable equipment, battery-powered systems, and hard switching or high-speed circuits. Key advantages include 100% EAS guaranteed, low gate charge, and compliance with RoHS and Halogen-Free standards. Product Attributes Brand: HS-Semi Product Series: HSM0056 Channel Type: N-Channel

Product Overview The IRLML2502 is a high cell density trenched N-channel MOSFET designed for fast switching and excellent RDS(ON) in low-power switching and load switch applications. It meets RoHS and Green Product requirements, offering super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology. This MOSFET is suitable for applications requiring efficient power management. Product Attributes Brand: HS-Semi Product Type:

Product OverviewThe HYG110P04LQ2 is a P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers reliable and rugged performance with a -40V drain-source voltage and -50A continuous drain current. Key advantages include low on-state resistance (RDS(ON)) at various gate-source voltages and 100% avalanche testing. This device is available in Halogen Free and Green configurations, compliant with RoHS standards

Product OverviewThe HYG018N10NS1/B is a N-Channel Enhancement Mode MOSFET designed for high-power applications. It features a low on-resistance of 1.8m(typ.)@VGS=10V, 100V/280A rating, and is 100% avalanche tested for reliability. Available in Halogen-Free and Green (RoHS Compliant) versions, this MOSFET is suitable for energy storage, battery protection, and motor control applications.Product AttributesBrand: HymexaOrigin: ChinaCertifications: RoHS Compliant, Halogen

Product Overview The HSBB0115 is a P-Channel, 100V Fast Switching MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology. Product Attributes Brand