Single FETs, MOSFETs

Product OverviewThe HY1720P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 200V and a continuous drain current of 64A, with a low on-resistance of 27m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS Compliant) options available. It is suitable for use in Uninterruptible Power Supplies and other power switching circuits.Product AttributesBr

Product Overview The HSCB1216 is a P-channel 12V Fast Switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device. Product Attributes Brand:

HY1804P/B N-Channel Enhancement Mode MOSFETThe HY1804P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient switching applications and power management in DC/DC converters. It offers a robust and reliable solution with features such as 100% avalanche testing, low on-state resistance, and availability in lead-free and green (RoHS compliant) versions. The device is available in TO-220FB-3L and TO-263-2L packages.Product AttributesBrand: HY (HUAYI

Product Overview The HSBB6254 is a dual N-channel MOSFET designed for fast switching applications. Featuring 60V drain-source voltage and a continuous drain current of up to 22A, these MOSFETs are built with advanced high cell density Trench technology. They offer super low gate charge, excellent CdV/dt effect decline, and are 100% EAS guaranteed. Available in a Green Device option, the HSBB6254 is ideal for load switching, battery protection, lighting, and bridge topologies.

Product OverviewThe HYG190P13NA1P/B is a P-Channel Enhancement Mode MOSFET designed for portable equipment and battery-powered systems. It features a high breakdown voltage of -125V and a continuous drain current of -72A, with a low on-resistance of 18 m (typ.) at VGS = -10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant).Product AttributesBrand: HYM (Huayi Microelectronics Co., Ltd.)Product

Product OverviewThe HY19P03 is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers a low on-resistance (RDS(ON)) of 4.8m (typ.) at VGS = 10V and 6.5m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.Product AttributesBrand: HOOYIMaterial: Lead Free and Green Devices Available (RoHS Compliant)Certifications: RoHS

Product OverviewThe TO-247A-3L and TO-3P-3L packages offer robust solutions for power electronics applications, designed for high-performance and reliability. These packages are suitable for a wide range of industrial and automotive systems requiring efficient power management and thermal dissipation.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsPackage TypeDevice

Product Overview The HSP3119 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers excellent Cdv/dt effect decline. It is designed for high-efficiency power management solutions. Product Attributes Brand: HS-Semi Product Series:

HY3503C2 Single N-Channel Enhancement Mode MOSFET The HY3503C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for various switching applications. It offers a low on-state resistance (RDS(ON)) of 2.0m at VGS = 10V and 2.7m at VGS = 4.5V, making it efficient for power management. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available. Key applications include switching circuits, power management for DC/DC

Product OverviewThe HYG045P06LA1B is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a low on-resistance of 3.9m (typ.) at VGS = -10V and 4.6m (typ.) at VGS = -4.5V, 100% avalanche tested for reliability, and is Halogen Free and Green (RoHS Compliant). Ideal for DC/DC converters and load switching.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Lead-free, Halogen-free (Green Devices)Certifications: RoHS Compliant, IPC/JEDEC J

Product Overview The HSM8P10 is a P-channel, 100V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi

Product OverviewThe HY3215 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-state resistance and is available in lead-free and green (RoHS compliant) options. The device is reliable, rugged, and 100% avalanche tested.Product AttributesBrand: HUAYIMaterial: Lead Free and Green Devices Available (RoHS Compliant)Certifications: RoHS CompliantTechnical SpecificationsModelPa

Product OverviewThe HXM10H03NSG is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low RDS(on). Its excellent package design ensures efficient heat dissipation, making it suitable for power switching applications and uninterruptible power supplies. Key features include a VDS of 100V and an ID of 3A with RDS(on) less than 160m at VGS=10V.Product AttributesBrand: HXMModel: HXM10H03NSGPackage: SOT-23-6Marking Code:

Product OverviewThis product offers channel enhancement with MOSFE features, providing avalanche tested, reliable, and rugged performance. It is halogen-free and green device compliant, suitable for power management in inverter systems.Product AttributesBrand: HUAYICertifications: RoHS Compliant, Halogen Free, Green Device AvailableMaterial: Halogen Free DeviceTechnical SpecificationsSymbolParameterRatingUnitTest ConditionsMinTypMaxAbsolute Maximum RatingsVDSSDrain Source

Product Overview The HSM4407 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench

Product OverviewThe HY3810 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 100V/180A rating and a low RDS(ON) of 5.0 m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) options. It is 100% avalanche tested.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Lead Free and Green Devices Available (RoHS Compliant

Product OverviewThe HY029N10B6 is a N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It features a 100V/280A rating with a low on-resistance of 2.3 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green (RoHS compliant) options available. It is suitable for applications such as brushless motor drive and electric power steering.Product AttributesBrand: HYMExaOrigin: China (Huayi

Product OverviewThe H5N50G is a 500V N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is ideal for Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Lead FreeTechni

Product OverviewThe HYG028N10NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 100V/240A rating, low on-resistance of 2.5m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. This device is available in Halogen-Free and Green (RoHS Compliant) versions, making it suitable for Uninterruptible Power Supply and Motor Control systems.Product AttributesBrand: HYGModel: HYG028N10NS1WPackage: TO

Product Overview The HSBB3054 is an N-Channel 30V Fast Switching MOSFET designed for power management applications. It features advanced high cell density Trench technology, offering advantages such as 100% EAS Guaranteed, super low gate charge, and excellent CdV/dt effect decline. This MOSFET is ideal for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial sectors. Product Attributes Brand: HS-Semi Device Type: N