Single FETs, MOSFETs
halogen free green compliant n channel enhancement mode mosfet 100 volt 322 amp HUAYI HYG016N10NS1B6
HYG016N10NS1B6 N-Channel Enhancement Mode MOSFETThe HYG016N10NS1B6 is a 100V/322A N-Channel Enhancement Mode MOSFET featuring low on-state resistance (RDS(ON)=1.5m typ. @ VGS=10V), 100% avalanche tested, and a reliable, rugged design. It is available in Halogen-Free and Green (RoHS Compliant) ...
Power Switching N Channel Enhancement Mode MOSFET HUAYI HY1720P with 200V Drain Source Voltage
Product OverviewThe HY1720P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 200V and a continuous drain current of 64A, with a low on-resistance of 27m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and ...
Fast Switching P channel MOSFET HUASHUO HSCB1216 with Excellent CdV dt Effect and RoHS Green Product
Product Overview The HSCB1216 is a P-channel 12V Fast Switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has ...
switching N Channel Enhancement Mode MOSFET HUAYI HY1804P suitable for power management applications
HY1804P/B N-Channel Enhancement Mode MOSFETThe HY1804P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient switching applications and power management in DC/DC converters. It offers a robust and reliable solution with features such as 100% avalanche testing, low on-state ...
Power MOSFET HUASHUO HSBB6254 dual N channel 60V 22A continuous drain current with trench technology
Product Overview The HSBB6254 is a dual N-channel MOSFET designed for fast switching applications. Featuring 60V drain-source voltage and a continuous drain current of up to 22A, these MOSFETs are built with advanced high cell density Trench technology. They offer super low gate charge, excellent ...
P Channel MOSFET HUAYI HYG190P13NA1P with 72A Drain Current and Lead Free Green Device Availability
Product OverviewThe HYG190P13NA1P/B is a P-Channel Enhancement Mode MOSFET designed for portable equipment and battery-powered systems. It features a high breakdown voltage of -125V and a continuous drain current of -72A, with a low on-resistance of 18 m (typ.) at VGS = -10V. This device is 100% ...
P Channel MOSFET HUAYI HY19P03D Featuring Low RDS ON and Avalanche Tested for Power Management Systems
Product OverviewThe HY19P03 is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers a low on-resistance (RDS(ON)) of 4.8m (typ.) at VGS = 10V and 6.5m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and ...
Thermal Control Power Electronics HUAYI HY3912W TO247A3L TO3P3L Packages for Industrial Applications
Product OverviewThe TO-247A-3L and TO-3P-3L packages offer robust solutions for power electronics applications, designed for high-performance and reliability. These packages are suitable for a wide range of industrial and automotive systems requiring efficient power management and thermal dissipatio...
Fast switching P channel MOSFET HUASHUO HSP3119 30V with low RDS ON and power management performance
Product Overview The HSP3119 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is ...
Durable N Channel Enhancement Mode MOSFET HUAYI HY3503C2 for Power Management and Switching Circuits
HY3503C2 Single N-Channel Enhancement Mode MOSFET The HY3503C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for various switching applications. It offers a low on-state resistance (RDS(ON)) of 2.0m at VGS = 10V and 2.7m at VGS = 4.5V, making it efficient for power management. ...
Low On Resistance P Channel MOSFET HUAYI HYG045P06LA1B Designed for DC DC Converters and Load Switching
Product OverviewThe HYG045P06LA1B is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a low on-resistance of 3.9m (typ.) at VGS = -10V and 4.6m (typ.) at VGS = -4.5V, 100% avalanche tested for reliability, and is Halogen Free and Green (RoHS Compliant). ...
100V fast switching MOSFET HUASHUO HSM8P10 P channel type with low gate charge and high cell density
Product Overview The HSM8P10 is a P-channel, 100V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is ...
Power Management MOSFET HUAYI HY3215B N Channel Enhancement Mode for Switching and Inverter Systems
Product OverviewThe HY3215 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-state resistance and is available in lead-free and green (RoHS compliant) options. The device is reliable, rugged, ...
Channel enhancement transistor HUAYI HY1920W halogen free device for rugged inverter power solutions
Product OverviewThis product offers channel enhancement with MOSFE features, providing avalanche tested, reliable, and rugged performance. It is halogen-free and green device compliant, suitable for power management in inverter systems.Product AttributesBrand: HUAYICertifications: RoHS Compliant, ...
Power Switching MOSFET Huixin HXM10H03NSG Featuring Low On Resistance and High Temperature Operation
Product OverviewThe HXM10H03NSG is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low RDS(on). Its excellent package design ensures efficient heat dissipation, making it suitable for power switching applications and uninterruptible power ...
Fast switching trench technology MOSFET HUASHUO HSM4407 30V P channel for power management solutions
Product Overview The HSM4407 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% ...
Power MOSFET HUAYI HY3810B N Channel 100V 180A rating low RDS ON for inverter and switching systems
Product OverviewThe HY3810 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 100V/180A rating and a low RDS(ON) of 5.0 m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead...
Durable HUAYI HY029N10B6 N Channel MOSFET 100V 280A with Halogen Free Green RoHS Compliant Material
Product OverviewThe HY029N10B6 is a N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It features a 100V/280A rating with a low on-resistance of 2.3 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green ...
500V N Channel MOSFET Huixin H5N50G with total gate charge of 16 nC and 5A continuous drain current rating
Product OverviewThe H5N50G is a 500V N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is ideal for Switch Mode Power Supplies (SMPS), adapters...
N Channel Enhancement Mode MOSFET HUAYI HYG028N10NS1W with 100V 240A Rating and Low On Resistance
Product OverviewThe HYG028N10NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 100V/240A rating, low on-resistance of 2.5m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. This device is available in Halogen...
