Single FETs, MOSFETs

Product OverviewThe HYG023N04LQ1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a low on-state resistance (RDS(ON)) of 2.3 m (typ.) at VGS = 10V and 3.0 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.)Material: Lead-Free and Green Devices

Product OverviewThe HY12P03C2 is a P-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It features a low on-state resistance (RDS(ON) of 10.4m typical at VGS = -10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Halogen-Free Devices Available (RoHS compliant)Certificat

Product OverviewThe HY4306W/A is a 60V/230A N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers reliable and rugged performance with a low on-state resistance of 2.2 m (typ.) at VGS=10V. This device is 100% avalanche tested and available in Lead Free and Green (RoHS Compliant) versions.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS Compliant, Green Devices AvailableMaterial: Lead Free and Green Devices AvailableTechn

Product OverviewThe AO6800-HXY is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and general switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDOrigin: ShenzhenModel: AO6800-HXYPackage: SOT-23-6LType: Dual N-Channel MOSFETMode: Enhancement ModeWebsite: www.hxymos.comTechnical

Product Overview The HSBB3115 is a P-channel MOSFET featuring high cell density and trench technology, designed to offer excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It provides excellent CdV/dt effect decline and is available as a Green Device. Product Attributes Brand: HS-Semi Certifications: RoHS, Green Product

HYG180N10LS1D Single N-Channel Enhancement Mode MOSFETThe HYG180N10LS1D is a single N-channel enhancement mode MOSFET designed for high-frequency point-of-load synchronous buck converter applications. It features a low on-resistance of 16m (typ.) at VGS = 10V and 24m (typ.) at VGS = 6V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant options are available.Product AttributesBrand: HUAYIModel: HYG180N10LS1DPackage Type: TO-252-2LCertificati

Product Overview The HSP0115 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. It is characterized by super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HSP Product Type: P-Channel

H5NK80 800V N-channel MOSFETThe H5NK80 is an 800V N-channel MOSFET designed for switching applications. It features 100% avalanche testing, minimized gate charge, and very low intrinsic capacitances, ensuring very good manufacturing repeatability. This MOSFET is ideal for various switching applications.Product AttributesCertifications: ULTechnical SpecificationsSymbolTCASE (C)ParameterValueUnit-25Absolute Maximum Ratings---25Electrical Characteristics--Typical Characteristic

Product OverviewThe HY4903P/B is a 290A N-Channel Enhancement Mode MOSFET featuring super low gate charge and advanced high cell density Trench technology. It offers excellent CdV/dt effect decline and is 100% EAS Guaranteed. This device is designed for high frequency synchronous buck converters in computer processor power and high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial applications. It is available in TO-220FB-3L and TO

Product Overview This N-Channel Power MOSFET features new technology for high voltage devices, offering low on-resistance and low conduction losses in a small package. Its ultra-low gate charge reduces driving requirements. The device is 100% avalanche tested and ROHS compliant. Product Attributes Case: Molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Certifications: ROHS compliant, UL 6 (implied

Product Overview The HSH3018B is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability. Product Attributes Brand: HS-Semi Product Type: N-Ch Fast Switching MOSFETs Certifications: RoHS,

Product Overview The HSU1241 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter systems. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline, enabled by advanced high cell density

Product Overview The HYG030N03LQ1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and battery protection. It offers high performance with low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. Lead-free and green device options are available, compliant with RoHS standards. Product Attributes Brand: HYM (Huayi Microelectronics Co., Ltd.) Origin: China Certifications: RoHS Compliant

Product OverviewThe HYG035N08NS2P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features low on-resistance (RDS(ON)=3.5 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-Free and Green devices are available, compliant with RoHS standards.Product AttributesBrand: HYM (Huayi Microelectronics)Material: SiliconCertifications: RoHS Compliant, Lead-Free, Green

Product Overview The HSU4113 is a P-channel, 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS guaranteed and full functional reliability. Product Attributes Brand: HS-Semi Product Type: P-Channel MOSFET Voltage Rating: 40V Switching Speed: Fast Technology: High Cell Density

HYG054N09NS1P/B N-Channel Enhancement Mode MOSFET The HYG054N09NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and motor control. It features a high current capability of 85V/135A with a low on-resistance of 4.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards. Product Attributes Brand: HYMSEXA Origin: China Material: Lead

Product OverviewThe HY3606P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers reliable and rugged performance with a low on-state resistance and is available in lead-free and green (RoHS compliant) options. The device has undergone 100% avalanche testing for enhanced reliability.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Lead Free and Green Devices Available (RoHS Compliant)Certification

Product OverviewThe HY-D89 is a N-Channel MOSFET designed for power management in inverter systems. It features avalanche tested, reliable, and rugged performance, with Halogen-Free and Green Devices available. RoHS compliant applications are supported.Product AttributesBrand: HY (Huayi Microelectronics)Origin: ChinaCertifications: RoHS Compliant, Halogen Free, Green Devices AvailableTechnical SpecificationsModelPackage CodeVDS (V)VGS (V)ID (A)RDS(ON) (m)PD (W)Package TypeHY

Product OverviewThe HXY2102EI is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDProduct ID: HXY2102EIWebsite: www.hxymos.comPackage: SOT-323Marking: TS2Origin: Shenzhen HuaXuanYang

Product Overview The HSS1P25 is a P-channel, 250V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology