Single FETs, MOSFETs
20V dual P channel MOSFET HUASHUO HSSK8811 featuring trench technology and fast switching for load switch circuits
Product Overview The HSSK8811 is a dual P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product ...
P Channel Enhancement Mode MOSFET HUAYI HY12P03C2 for Networking DC DC Power Systems and Power Tools
Product OverviewThe HY12P03C2 is a P-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It features a low on-state resistance (RDS(ON) of 10.4m typical at VGS = -10V), 100% avalanche ...
N Channel Enhancement Mode MOSFET with 40V 170A rating HUAYI HYG023N04LQ1P rugged switching device
Product OverviewThe HYG023N04LQ1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a low on-state resistance (RDS(ON)) of 2.3 m (typ.) at VGS = 10V and 3.0 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged...
60V 230A N Channel MOSFET HUAYI HY4306W with Low On State Resistance and Wide Operating Temperature
Product OverviewThe HY4306W/A is a 60V/230A N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers reliable and rugged performance with a low on-state resistance of 2.2 m (typ.) at VGS=10V. This device is 100% avalanche tested and available in Lead Free and ...
Dual N Channel Enhancement Mode MOSFET HXY MOSFET AO6800 HXY with Low Gate Charge and Excellent RDS
Product OverviewThe AO6800-HXY is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and general switching applications.Product ...
P channel MOSFET HUASHUO HSBB3115 featuring low gate charge and trench technology for power supplies
Product Overview The HSBB3115 is a P-channel MOSFET featuring high cell density and trench technology, designed to offer excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1D Featuring Low On Resistance for Power Management
HYG180N10LS1D Single N-Channel Enhancement Mode MOSFETThe HYG180N10LS1D is a single N-channel enhancement mode MOSFET designed for high-frequency point-of-load synchronous buck converter applications. It features a low on-resistance of 16m (typ.) at VGS = 10V and 24m (typ.) at VGS = 6V, 100% ...
100V P Channel Fast Switching MOSFET HUASHUO HSP0115 with Low Gate Charge and Electrical Performance
Product Overview The HSP0115 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and ...
switching component Huixin H5NK80 800V N channel MOSFET with low gate charge and avalanche tested
H5NK80 800V N-channel MOSFETThe H5NK80 is an 800V N-channel MOSFET designed for switching applications. It features 100% avalanche testing, minimized gate charge, and very low intrinsic capacitances, ensuring very good manufacturing repeatability. This MOSFET is ideal for various switching ...
High Current N Channel MOSFET HUAYI HY4903B Featuring Low Gate Charge and Halogen Free Construction
Product OverviewThe HY4903P/B is a 290A N-Channel Enhancement Mode MOSFET featuring super low gate charge and advanced high cell density Trench technology. It offers excellent CdV/dt effect decline and is 100% EAS Guaranteed. This device is designed for high frequency synchronous buck converters in ...
High Voltage N Channel MOSFET Huixin H12N65IK with Low On Resistance and ROHS Compliant Construction
Product Overview This N-Channel Power MOSFET features new technology for high voltage devices, offering low on-resistance and low conduction losses in a small package. Its ultra-low gate charge reduces driving requirements. The device is 100% avalanche tested and ROHS compliant. Product Attributes ...
N channel MOSFET HUASHUO HSH3018B designed for synchronous buck converter circuits and fast switching
Product Overview The HSH3018B is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green ...
Trenched N channel MOSFET HUASHUO HSU1241 optimized for fast switching and performance in converters
Product Overview The HSU1241 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter systems. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements, is 100% EAS ...
Low On State Resistance N Channel MOSFET HUAYI HYG030N03LQ1P Suitable for Switching and Protection
Product Overview The HYG030N03LQ1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and battery protection. It offers high performance with low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. Lead-free ...
P channel MOSFET HUASHUO HSU4113 40V featuring fast switching and low conduction losses for power management
Product Overview The HSU4113 is a P-channel, 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS ...
Power Management N Channel MOSFET HUAYI HYG035N08NS2P Featuring Low RDS ON and Switching Performance
Product OverviewThe HYG035N08NS2P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features low on-resistance (RDS(ON)=3.5 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-Free ...
85V 135A N Channel Enhancement Mode MOSFET HUAYI HYG054N09NS1P Low On Resistance for Switching
HYG054N09NS1P/B N-Channel Enhancement Mode MOSFET The HYG054N09NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and motor control. It features a high current capability of 85V/135A with a low on-resistance of 4.8m (typ.) at VGS = 10V. This device is 100% avalanche ...
N Channel Enhancement Mode MOSFET HUAYI HY3606P Designed for Switching Applications and Power Management
Product OverviewThe HY3606P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers reliable and rugged performance with a low on-state resistance and is available in lead-free and green (RoHS compliant) options. The device ...
Power MOSFET HUAYI HY0910D with N Channel Design and Halogen Free Green Device Certification
Product OverviewThe HY-D89 is a N-Channel MOSFET designed for power management in inverter systems. It features avalanche tested, reliable, and rugged performance, with Halogen-Free and Green Devices available. RoHS compliant applications are supported.Product AttributesBrand: HY (Huayi Microelectro...
Low Gate Voltage N Channel HXY MOSFET HXY2102EI Featuring Trench Technology and Switching Performance
Product OverviewThe HXY2102EI is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is suitable for battery protection and other ...
