Single FETs, MOSFETs
Fast Switching MOSFET HUASHUO HSBB8066 N Channel 80V with Low Gate Charge and High Current Capability
Product Overview The HSBB8066 is a N-Channel, 80V fast switching MOSFET designed for high-frequency switching applications, synchronous rectification, DC/DC converters, and motor drivers. It features advanced high cell density Trench technology, offering super low gate charge, excellent CdV/dt effect decline, and is 100% EAS guaranteed. This MOSFET is available as a Green Device. Product Attributes Brand: HS-Semi Technology: Advanced high cell density Trench technology Green
P Channel 100V MOSFET HUASHUO HSU12P10 with Fast Switching Low Gate Charge and Superior Cdvdt Effect
Product Overview The HSU12P10 is a P-Channel, 100V Fast Switching MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Certifications: RoHS,
Trenched technology MOSFET HUASHUO HSS2300A designed for fast switching and small power load control
Product Overview The HSS2300A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline due to its advanced
N Channel Enhancement Mode MOSFET HUAYI HY1906D Designed for Inverter Systems and Power Electronics
HY1906D/U/V - N-Channel Enhancement Mode MOSFET The HY1906D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various power management applications. It features low on-state resistance, avalanche rating, and a reliable, rugged construction. Available in lead-free and green (RoHS compliant) options, this MOSFET is ideal for inverter systems and other demanding power electronics applications. Product Attributes Brand: HUAYI Origin: China Certifications:
HYG090P03LA1C1 Single P Channel MOSFET Featuring Low RDS ON and RoHS Compliant Green Device Material
Product OverviewThe HYG090P03LA1C1 is a single P-Channel Enhancement Mode MOSFET designed for switching applications. It offers a low RDS(ON) of 7.9 m (typ.) at VGS = -10V and 10.5 m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, and rugged. It is also Halogen Free and Green (RoHS Compliant), making it suitable for lithium battery protection boards.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.)Material: Halogen Free and
40V P channel MOSFET HUASHUO HSU4103 featuring low gate charge and excellent switching performance
Product Overview The HSU4103 is a P-channel 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Product Type: P
switching MOSFET HUASHUO HSS2N15 with super low gate charge and high cell density trench technology
Product Overview The HSS2N15 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is available as a green device. Key advantages include super low gate charge and excellent Cdv/dt effect decline, achieved through advanced high cell density trench technology.
N Channel Enhancement Mode MOSFET HUAYI HYG024N03LR1P with RoHS Compliance and Low On State Resistance
Product Overview The HYG024N03LR1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with low on-state resistance (RDS(ON)) and is 100% avalanche tested for reliability. Lead-free and green devices are available, complying with RoHS standards. Product Attributes Brand: Hymexa Product Code: HYG024N03LR1P/B Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 (MSL classification)
High cell density trenched N channel MOSFET HUASHUO HSH0026 for synchronous buck converter applications
Product Overview The HSH0026 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline, enabled by advanced high cell density Trench
N Channel Fast Switching MOSFET HUASHUO HSBA4088A with 40V Drain Source Voltage and Low Gate Charge
Product Overview The HSBA4088A is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring a 40V drain-source voltage and advanced trench technology, it offers high current capability and low gate charge. This MOSFET is ideal for synchronous rectification in SMPS, DC/DC converters, and OR-ing applications. It is RoHS and Halogen-Free compliant, ensuring environmental responsibility. Product Attributes Brand: HS-Semi Technology:
Fast switching P channel MOSFET HUASHUO HSU4P25 featuring trench technology and green certification
Product Overview The HSU4P25 is a P-channel, 250V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements and has approved full function reliability. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device. Product Attributes Brand: HSU
Switching MOSFET HUAYI HYG045N03LA1C1 N Channel Enhancement Mode with RoHS Compliant Green Material
Product OverviewThe HYG045N03LA1C1 is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. This device is available in Halogen Free and Green versions, complying with RoHS standards.Product AttributesBrand: HYM (Huayi Microelectronics)Origin: ChinaMaterial: Halogen Free and Green Devices Available (RoHS Compliant)Certification
Fast Switching N Channel MOSFET HUASHUO HSU3004 Featuring Low RDS ON and High Cell Density Technology
Product Overview The HSU3004 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench
Low Gate Charge P Channel Fast Switching MOSFET HUASHUO HSBA30P15 for Power Switching Applications
Product Overview The HSBA30P15 is a P-Channel Fast Switching MOSFET designed for a wide variety of applications. It utilizes advanced trench MOSFET technology to achieve excellent RDS(ON) and low gate charge. This device is RoHS and Green Product compliant, 100% EAS guaranteed, and offers full function reliability. Key features include super low gate charge and excellent CdV/dt effect decline, making it suitable for applications requiring efficient power switching. Product
Low On Resistance N Channel MOSFET HUAYI HY3810B6 Suitable for High Current and Voltage Applications
Product OverviewThe HY3810B6 is a N-Channel Enhancement Mode MOSFET designed for switch applications and brushless motor drives. It features high voltage and current ratings, low on-state resistance, 100% avalanche tested, and a reliable, rugged design. Halogen-free and green device options are available, compliant with RoHS standards.Product AttributesBrand: HUAYIPackage Type: TO-263-6LCertifications: RoHS Compliant, Halogen FreeMaterial: Lead-free (matte tin plate
Single N Channel Enhancement Mode MOSFET HUAYI HY1506C2 Featuring Low RDS ON and High Current Rating
HUAYI HY1506C2 Single N-Channel Enhancement Mode MOSFETThe HUAYI HY1506C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers reliable and rugged performance with a 60V/48A rating, low RDS(ON) of 10.5m (typ.) at VGS = 10V, and 100% avalanche tested. Halogen-free devices are available.Product AttributesBrand: HUAYIModel: HY1506C2Material: Halogen-Free Devices AvailableCertifi
Durable Huixin H20N50F 500V N Channel MOSFET featuring improved dvdt capability and avalanche testing
Product OverviewThe H20N50F is a 500V N-Channel MOSFET designed for high-performance switching applications. It features fast switching speed, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications:
HUASHUO HSU3103 30V P channel MOSFET offering low RDS ON and high reliability for advanced power supply designs
Product Overview The HSU3103 is a P-channel 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
N Channel MOSFET Fast Switching 100V Device HUASHUO HSL0004 Suitable for Electronic Applications
HSL0004 N-Ch 100V Fast Switching MOSFETs Product Overview The HSL0004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements, ensuring full function reliability. Product Attributes Brand: HS-Semi Type: N-Channel MOSFET Certifications: RoHS, Green Product Availability:
N Channel Super Junction Power MOSFET HUAKE HCD65R1K0 650V Low Gate Charge Fast Switching Device
Product OverviewThe HCD65R1K0 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high-frequency switching mode power supplies and active power factor correction applications.Product AttributesBrand: HUAKE semiconductorsProduct Series: HCD65R1K0Channel Type: N-ChannelTechnology: Super JunctionVersion: 1.0Chip
