Single FETs, MOSFETs
N Channel MOSFET Hangzhou Silan Microelectronics SVF7N80F Designed for AC DC and DC DC Power Systems
Silan Microelectronics SVF7N80T/F/KL/K/FD N-CHANNEL MOSFET The SVF7N80T/F/KL/K/FD is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching ...
N Channel MOSFET HUASHUO HSBA0048A Featuring 100V Drain Source Voltage and 78A Continuous Current
Product Overview The HSBA0048A is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced Trench MOS Technology, it offers 100V drain-source voltage and a continuous drain current of up to 78A. This MOSFET is characterized by its fast switching ...
600V N channel MOSFET Hangzhou Silan Microelectronics SVF4N60CAD transistor for power supply designs
Product OverviewThe SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse ...
p channel mosfet HUASHUO HSBA6117 featuring fast switching and low gate charge for power management solutions
Product Overview The HSBA6117 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
N Channel MOSFET Trenched Technology RoHS Compliant HUASHUO HSBA8048 for Fast Switching Applications
Product Overview The HSBA8048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous rectification. This device meets RoHS and Halogen-Free compliance and is 100% EAS guaranteed with full ...
Durable High Diode BSS138 N Channel MOSFET offering continuous drain current and low on resistance
Product Overview The BSS138 is a high-density cell design N-Channel MOSFET in a SOT-23 package, offering extremely low RDS(on) for rugged and reliable performance. It is designed for direct logic-level interface with TTL/CMOS and is suitable for driving various loads including relays, solenoids, ...
n channel mosfet HUASHUO HSP80N20 featuring fast switching and low rds on for power supply solutions
Product Overview The HSP80N20 is a high-performance N-channel Fast Switching MOSFET featuring an extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS ...
60 Volt 150 Amp N Channel MOSFET HSBA6076 HUASHUO Ideal for Synchronous Buck Converter Circuits
Product Overview The HSBA6076 is a high cell density SGT N-channel MOSFET designed for fast switching applications. It offers excellent RDSON and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed ...
Dual N channel 100V fast switching MOSFET HUASHUO HSBB0210 with low Rds on and super low gate charge
Product Overview The HSBB0210 is a dual N-channel 100V fast switching MOSFET featuring advanced trench MOS technology. It offers low Rds(on) and super low gate charge, making it suitable for hard switching and high-speed circuit applications. This device is 100% EAS guaranteed and available in a ...
N Channel Enhancement Mode MOSFET HUAYI HY3712P Featuring Low On Resistance and High Current Capacity
Product OverviewThe HY3712 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous current of 170A, featuring a low on-resistance of 6.3 m (typ.) at VGS=10V. This ...
Low Gate Charge N Channel MOSFET Guangdong Hottech FL8205 with High Current Capability and Performance
Product OverviewThe FL8205 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, ...
220 3L package Hangzhou Silan Microelectronics SVD640T N channel MOSFET for power supply applications
Product OverviewThe SVD640T/D/S is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary S-RinTM structure VDMOS technology. This advanced technology offers minimized on-state resistance, superior switching performance, and enhanced robustness against high ...
Power MOSFET HUAYI HY3215B N Channel Enhancement Mode Device for Switching and Inverter Applications
Product OverviewThe HY3215P/M/B/PS/PM is a N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low on-state resistance and is available in lead-free and green (RoHS compliant) versions. The device is ...
High Cell Density Trenched P Channel MOSFET HUASHUO HSL6107 Suitable for Synchronous Buck Converters
Product Overview The HSL6107 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
Power MOSFET Guangdong Hottech HKTD120N04 with 40V drain source voltage and 120A continuous drain current
Product OverviewThe HKTD120N04 is an N-CHANNEL Power MOSFET designed for high-performance applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is suitable for applications requiring efficient power ...
40 Volt 240 Amp Power MOSFET Hangzhou Silan Microelectronics SVT042R5NT TO220 Package for Switching
Product OverviewThe SVT042R5NL5(T) is an N-channel enhancement mode power MOS field-effect transistor manufactured using advanced LVMOS technology. It offers minimized on-state resistance and superior switching performance, making it ideal for UPS and Power Management for Inverter Systems. Key ...
power MOSFET Hangzhou Silan Microelectronics SVF4N90F for DC DC converters and PWM motor driver circuits
Product OverviewThe SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy ...
SOT23 Package 30V MOSFET Featuring High Diode 3402 Ideal for Load Switches and Battery Applications
Product Overview This is a 30V N-Channel MOSFET in a SOT-23 plastic-encapsulated package, designed for high-performance applications. It features TrenchFET technology for excellent RDS(on) and low gate charge, making it ideal for DC/DC converters, load switches for portable devices, and battery ...
High Cell Density N Channel MOSFET HUASHUO HSBA4016 Designed for Fast Switching and Low Gate Charge
Product Overview The HSBA4016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS ...
P Channel MOSFET SOT 23 Package Featuring HUASHUO FDN338P Ideal for Power Switching Applications
FDN338P P-Ch 20V Fast Switching MOSFETs The FDN338P is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. This MOSFET ...
