Single FETs, MOSFETs
Dual N Channel MOSFET Guangdong Hottech 9926A Plastic SOP8 Package Low Voltage Switching Transistor
Product OverviewThe 9926A is a dual N-Channel enhancement mode field-effect transistor encapsulated in a plastic SOP-8 package. It features a low Drain-Source Voltage (VDS) of 20V and a continuous Drain Current (ID) of 7A. With low Static Drain-Source On-Resistance (RDS(ON)) values, it offers ...
Fast Switching Dual N Channel MOSFET HUASHUO HSBA6256 60V Device for DC DC Converters and Motor Control
HSBA6256 Dual N-Channel 60V Fast Switching MOSFETs The HSBA6256 is a dual N-channel MOSFET designed for fast switching applications. It features advanced Trench MOS Technology, low gate charge, and low RDS(ON), making it suitable for motor control, DC/DC converters, and synchronous rectifier ...
Fast Switching P Channel 100V MOSFET HUASHUO HSBA0195A Designed for Power Tools and DC DC Converters
Product Overview The HSBA0195A is a P-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It is ideal for DC/DC converters, power tool applications, and features advanced high cell density Trench technology. This MOSFET is 100% EAS ...
Hangzhou Silan Microelectronics SVF12N65F Power MOSFET Featuring TO 220F 3L Package and 0.64 Ohm RDS
Product OverviewThe SVF12N65F/K/S is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and improves robustness against high energy ...
High density cell dual n channel transistor Guangdong Hottech 2N7002DW low on resistance and compact package
2N7002DW Dual N-Channel Enhancement Mode Field Effect TransistorThe 2N7002DW is a dual N-channel enhancement mode field-effect transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low on-resistance (RDS(ON) 1.9 @ VGS=10V, ID=300mA...
Trench N Channel MOSFET HUASHUO HSP30N15A Featuring Low Gate Charge and Excellent RDS ON Performance
HSP30N15A N-Ch 150V Fast Switching MOSFETs Product Overview The HSP30N15A is a high-performance trench N-channel MOSFET designed for synchronous buck converter applications. It features extreme high cell density, offering excellent RDS(ON) and low gate charge. This MOSFET meets RoHS and Green ...
Trenched N Channel MOSFET HUASHUO HSM6006 Featuring High Cell Density and Fast Switching Performance
Product Overview The HSM6006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS ...
Hangzhou Silan Microelectronics SVF4N65F MOSFET designed for operation in AC DC power supply systems
Product DescriptionThe SVF4N65F/M/MJ/D is an N-channel enhancement mode power MOS field effect transistor utilizing Silan proprietary F-CellTM structure VDMOS technology. This advanced design minimizes on-state resistance, enhances switching performance, and provides superior withstand capability ...
Fast Switching Dual N Channel MOSFET HUASHUO HSBA0204 100V for Switching and Hard Switching Circuits
HSBA0204 Dual N-Channel 100V Fast Switching MOSFETs Product Overview The HSBA0204 is a dual N-channel MOSFET featuring high cell density trenched technology, designed to deliver excellent RDS(ON) and efficiency. This fast-switching MOSFET is ideal for most low-power switching and load switch ...
High cell density trench technology N channel MOSFET HSBA20N15S with excellent switching performance
Product Overview The HSBA20N15S is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This fast-switching MOSFET is designed with advanced high cell density Trench technology, providing ...
Power MOSFET Hangzhou Silan Microelectronics SVF4N65RMJ for High Voltage Switching and Motor Control
Product OverviewThe SVF4N65RD/M/MJ/F/T is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and provides superior ...
N Channel Fast Switching MOSFET HUASHUO HSX80N20 with Low Gate Charge and High Reliability Guarantee
Product Overview The HSX80N20 is a high-performance N-channel Fast Switching MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS ...
Dual N Channel MOSFET HUASHUO HSSX2204 Featuring Low Gate Charge and High Side Switching Capability
Product Overview The HSSX2204 is a dual N-channel MOSFET featuring high cell density and trenched construction, offering excellent RDS(ON) and efficiency. It is designed for small power switching and load switch applications. This MOSFET provides fast switching speed, super low gate charge, high...
Low resistance N channel MOSFET Hangzhou Silan Microelectronics SVF12N60CF for power conversion systems
Product OverviewThe SVF12N60CF is an N-channel enhancement mode power MOS field effect transistor developed using Silan's proprietary F-CellTM structure VDMOS technology. This advanced technology offers reduced on-state resistance, superior switching performance, and enhanced reliability in ...
P channel 60V MOSFET HUASHUO HSU70P06 with fast switching and 100 percent EAS guaranteed performance
Product Overview The HSU70P06 is a P-channel, 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirement...
Low static drain source on resistance N channel MOSFET HSM10N15A ideal for power management circuits
Product Overview The HSM10N15A is a high-performance N-channel MOSFET featuring an extreme high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product ...
10 amp 600 volt N channel MOSFET Hangzhou Silan Microelectronics SVF10N60F optimized for switching in power conversion
Product OverviewThe SVF10N60F/S/K is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced design offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse handling in ...
High cell density P channel mosfet HSBA70P06 60V fast switching device with low gate charge and operation
Product Overview The HSBA70P06 is a P-channel, 60V, fast-switching MOSFET featuring high cell density and excellent RDSON and gate charge. It is designed for synchronous buck converter applications and meets RoHS and Green Product requirements. The device is 100% EAS guaranteed with full function ...
N Channel MOSFET With 5.8A Drain Current High Diode HD3400 Suitable For Load Switching Applications
Product Overview The HD3400 is a high-density N-Channel MOSFET from High Diode Semiconductor, designed for extremely low RDS(ON) and exceptional DC current capability. This SOT-23 packaged semiconductor is ideal for load/power switching and interfacing applications, offering efficient performance ...
Trench N Channel MOSFET HUASHUO BSS138 Offering High Cell Density and Performance for Power Circuits
Product Overview The BSS138 is a high cell density trenched N-channel MOSFET designed for fast switching applications, offering excellent RDS(ON) and gate charge characteristics. It is ideal for most synchronous buck converter applications and meets RoHS and Green Product requirements. This device ...
