Single FETs, MOSFETs
HSBA4206 Dual N Channel 40V MOSFET Featuring Low Gate Charge and High Cell Density Trench Technology
Product Overview The HSBA4206 is a dual N-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDSON and gate charge, making it suitable for most synchronous buck converter applications. This product meets RoHS and Green Product requirements and ...
Low gate charge and high cell density MOSFET HUASHUO HSU4903 ideal for synchronous buck converter designs
Product Overview The HSU4903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSU4903 series meets RoHS and ...
High cell density trenched mosfet HUASHUO HSBB8008 optimized for synchronous buck converter circuits
Product Overview The HSBB8008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability ...
High cell density trench technology P channel MOSFET HUASHUO HSBB02P15 for power management circuits
Product Overview The HSBB02P15 is a P-channel 150V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, ...
Power Management with HUASHUO HSU3016 N Channel Fast Switching MOSFET and Low Gate Charge Technology
Product Overview The HSU3016 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS ...
4A 650V N channel MOSFET Hangzhou Silan Microelectronics SVF4N65CAF for AC DC power supply designs
Product DescriptionThe SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high...
HYG400N15NS1P N Channel MOSFET Offering 150V Drain Source Voltage and 40A Continuous Drain Current
Product OverviewThe HYG400N15NS1P&B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a 150V/40A rating with a low on-resistance of 34m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, ensuring reliability and ruggedness. Lead-free and green ...
Power MOSFET Guangdong Hottech APM4953 Featuring Low Gate Charge and High Current Handling Capability
Product Overview The 4953 is a P-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for load switch and PWM applications, providing high power ...
Power Management Solution HUASHUO HSU15810C N Channel Fast Switching MOSFET with 100V Voltage Rating
Product Overview The HSU15810C is a N-Channel Fast Switching MOSFET designed for high-performance applications. It features a 100V breakdown voltage and is optimized for fast switching characteristics. This MOSFET is suitable for general applications requiring efficient power management. Product ...
N Channel MOSFET Guangdong Hottech HKTD4N50 with 1.7 Milliohm RDS on and UL 94V 0 Rated TO 252 Package
Product OverviewThis N-CHANNEL Power MOSFET offers high performance with a 500V maximum drain-source voltage and 5A continuous drain current. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. The TO-252 package is ...
N Channel MOSFET HUASHUO HSBB15N15S Featuring 150V Drain Source Voltage and Trench Technology Design
Product Overview The HSBB15N15S is a high-performance N-channel MOSFET featuring an N-Ch 150V rating and fast switching capabilities. It utilizes an advanced high cell density Trench technology, offering excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
High cell density trench P channel MOSFET HUASHUO HSW6113 featuring low gate charge and performance for power stages
Product Overview The HSW6113 is a P-channel, 60V fast-switching MOSFET designed for high cell density trenched applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS ...
High density cell Guangdong Hottech HKTD70N04 N Channel Power MOSFET for power conversion solutions
Product OverviewThe HKTD70N04 is a high-performance N-Channel Power MOSFET designed for demanding applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is housed in a TO-252 package, offering a ...
SOP 8 Package N P Channel MOSFET Hangzhou Silan Microelectronics SVD1055SATR for Switching Applications
SVD1055SA N/P Channel Enhancement Mode Field Effect TransistorThe SVD1055SA is an N/P channel enhancement mode power MOSFET manufactured using Silan Microelectronics' low-voltage planar VDMOS process technology. Its advanced process and cell structure provide low on-resistance, superior switching ...
P Channel MOSFET 60V Fast Switching Device HUASHUO HSH6115 Suitable for Synchronous Buck Converters
Product Overview The HSH6115 is a P-channel, 60V fast-switching MOSFET designed for high-efficiency synchronous buck converter applications. It features high cell density trench technology, offering excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements and is ...
Low On Resistance N Channel MOSFET Guangdong Hottech IRLML0060 With 60V Drain Source Voltage Rating
Product OverviewThe IRLML0060 is an N-channel MOSFET designed for surface mount applications. It features a drain-source voltage of 60V, a continuous drain current of 2.7A, and ultra-low on-resistance (
N Channel MOSFET with High Diode 2SK3018 featuring 30V Drain Source Voltage and Low On Resistance
Product Overview This N-Channel MOSFET, compliant with RoHS 3, features a 30V drain-source voltage and low on-resistance, making it ideal for portable equipment due to its low voltage drive capability. It offers fast switching speeds and easily designed drive circuits, facilitating parallel ...
Power mosfet Guangdong Hottech IRLML6302 P channel type with low profile and molded plastic housing
IRLML6302 P-Channel Power MOSFETThe IRLML6302 is a P-Channel Power MOSFET featuring GenerationV technology, offering ultra-low on-resistance and a low profile (
Electronic circuit components featuring huayi hy1001d mosfets and diodes in various package types for power management
Product OverviewThis document details various semiconductor components, including MOSFETs and diodes, presented in different package types such as TO-251-3S, TO-252-2L, TO-251-3L, and others. It provides pin configurations (S, G, D) and outlines technical specifications for these components, likely ...
High Current N Channel MOSFET HUASHUO HSBA4094 Suitable for SMPS Or ing Circuits and Fast Switching
Product Overview The HSBA4094 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it ideal for synchronous rectification in SMPS, DC/DC converters, and Or-ing circuits. ...
