Single FETs, MOSFETs
100V N Channel MOSFET HUAKE HST50N10 featuring low RDSon and fast switching for power supply design
Product OverviewThe HST50N10 is a 100V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers excellent performance with a low RDS(on) of 13m (Typ) at VGS=10V, low gate charge, low Crss, 100% avalanche ...
Trenched N channel MOSFET HUASHUO HSM4002 featuring low gate charge and high cell density technology
Product Overview The HSM4002 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. The HSM4002 meets RoHS and Green Product requirements and is 100% EAS ...
N Channel MOSFET HUAYI HYG037N10LS2C2 with 100V drain source voltage and 105A current
Product OverviewThe HYG037N10LS2C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications. It features a high current capability of 100V/105A with low on-resistance (RDS(ON)=3.0 m typ. @ VGS = 10V). This device is 100% avalanche tested, reliable, and rugged, with halogen-free ...
Hangzhou Silan Microelectronics SVF6N60D N Channel MOSFET for DC DC Converters and PWM Motor Drivers
Product OverviewThe SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances on-state resistance minimization, provides superior switching performance, and offers robust high ...
650V N Channel Super Junction Power MOSFET with Low Gate Charge and Improved dvdt HUAKE HCD65R280-S2
Product OverviewThe HCD65R280-S2 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers a continuous drain current of 15.0A and a low on-resistance of 240m (typ.) at VGS=10V. Key features include low gate charge, low Crss, 100% avalanche tested, fast switching, and ...
Power Switching N Channel MOSFET HUAYI HYG101N10LA1D 100V Drain Source Voltage 15A Continuous Current
Product Overview The HYG101N10LA1D is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a 100V drain-source voltage and 15A continuous drain current with a low on-resistance of 80 m typ. at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, ...
Super Junction N Channel MOSFET HUAKE HCD65R360 with Fast Switching and High Drain Current Capability
Product OverviewThe HCD65R360 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers high performance with features like low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is ideal for high-frequency switching ...
N Channel Fast Switching MOSFET HUASHUO HSMA4086 Ideal for SMPS DC DC Converters and Or Ing Circuits
Product Overview The HSMA4086 is a N-Channel Fast Switching MOSFET designed for high-current applications. It features advanced trench technology, low gate charge, and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing applications. This ...
Hangzhou Silan Microelectronics SVD540T MOSFET with Pb Free and Halogen Free Environmental Compliance
Product OverviewThe SVD540T/D/K/F is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary flat low-voltage structure VDMOS technology. This advanced design minimizes on-state resistance, enhances switching performance, and provides robust high-energy pulse ...
20V dual N channel MOSFET HUASHUO HSW8205 featuring fast switching and performance for battery packs
Product Overview The HSW8205 is a dual N-channel, 20V fast switching MOSFET designed with advanced high cell density Trench technology. It features low RDS(ON) and is particularly suitable for Lithium-ion battery pack applications. This product meets RoHS and Green Product requirements with full ...
High cell density trench N channel MOSFET HUASHUO HSBB3016 optimized for synchronous buck converter and RoHS compliance
Product Overview The HSBB3016 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability ...
30V dual N channel MOSFET HUASHUO HSBA3202 with excellent switching performance and RoHS certified design
Product Overview The HSBA3202 is a dual N-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% ...
HUAKE SMT10N60 N Channel MOSFET 600V voltage rating low Crss and avalanche tested for switching performance
Product OverviewThe SMT10N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. Key features include low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high-frequency switching ...
Low RDS ON N Channel MOSFET HUASHUO HSM6056 Suitable for DC DC Converters and Switching Applications
Product Overview The HSM6056 is an N-Channel MOSFET designed for fast switching applications, featuring 60V drain-source voltage and advanced trench MOS technology. It offers low gate charge and low RDS(ON), making it suitable for motor control, DC/DC converters, and synchronous rectifier applicatio...
P Channel 100V MOSFET HUASHUO HSP0139 Fast Switching Device with Low Gate Charge and RoHS Compliance
Product Overview The HSP0139 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench MOSFET technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for a wide variety of applications. This device meets RoHS and Green Product requirements, is 100% ...
Fast Switching N Channel MOSFET HUASHUO HSBB4752 Featuring Low RDS ON and Advanced Trench Technology
Product Overview The HSBB4752 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and ...
N Channel Enhancement Mode MOSFET HUAYI HY1908B 80V 90A Low RDS ON 7m Typical Power Management Device
Product OverviewThe HY1908P/M/B/MF/PS/PM is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with features such as 80V/90A rating, low RDS(ON) of 7m(typ.)@VGS = 10V, 100% avalanche tested, and reliability. ...
Fast Switching N Channel MOSFET Featuring HUASHUO HSBA3006 with Low Gate Charge and High Reliability
Product Overview The HSBA3006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter systems. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% ...
P Channel MOSFET HUASHUO HSU3031 30V Fast Switching Device with Low Gate Charge and High Reliability
Product Overview The HSU3031 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
Complementary MOSFET pair HUASHUO HSW4602 with advanced trench technology and switching performance
Product Overview The HSW4602 is a high-performance complementary N-channel and P-channel MOSFET pair featuring high cell density for excellent RDS(ON) and gate charge characteristics. Designed for synchronous buck converter applications, these MOSFETs offer fast switching capabilities. The HSW4602 ...
