Single FETs, MOSFETs
Synchronous buck converter mosfet with super low gate charge and trench technology HUASHUO HSU6040
Product Overview The HSU6040 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
N channel Power MOSFET Guangdong Hottech HKTD5N20 with High Density Cell Design and 0.6 Ohm Maximum RDS
Product OverviewThis N-CHANNEL Power MOSFET features a high-density cell design for ultra-low on-resistance and is characterized by its 200V drain-source voltage and 5A continuous drain current. Designed for efficient power switching applications, it offers a maximum RDS(ON) of 0.6 at VGS=10V and is ...
N channel MOSFET HUASHUO HSBA0048 designed for fast switching and synchronous rectification circuits
Product Overview The HSBA0048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous rectification in AC/DC quick chargers. This MOSFET is 100% EAS guaranteed, RoHS and Halogen-Free ...
N channel 40v fast switching mosfet huashuo hsu4054 perfect for dc dc converters and or ing circuits
Product Overview The HSU4054 is a N-Channel 40V Fast Switching MOSFET designed for high-efficiency power applications. Featuring advanced trench technology and low gate charge, it is ideal for SMPS synchronous rectification, DC/DC converters, and Or-ing circuits. This MOSFET offers fast switching ...
Compact low voltage n channel mosfet Guangdong Hottech AO3400 ideal for pwm load switch applications
Product OverviewThe AO3400 is a low voltage N-channel MOSFET designed for high-efficiency applications. It features ultra-low on-resistance, making it suitable for PWM and load switch applications. This surface mount device is housed in a compact SOT-23 package.Product AttributesBrand: HOTTECHOrigin...
high cell density MOSFET HUASHUO HSBA8024A designed for synchronous rectification and fast switching
Product Overview The HSBA8024A is a high cell density trenched N-channel MOSFET designed for fast switching applications, offering excellent RDS(ON) and gate charge for synchronous rectification. This RoHS and Halogen-Free compliant device is 100% EAS guaranteed with full function reliability ...
High Current Handling N Channel MOSFET Guangdong Hottech HKTD80N03 with 170 Amp Pulsed Drain Current
Product OverviewThe HKTD80N03 is a N-CHANNEL Power MOSFET designed for high-performance applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is suitable for various power management tasks requiring ...
N Channel Power MOSFET Hangzhou Silan Microelectronics SVF20NE50PN for AC DC and DC DC Power Applications
Product OverviewThe SVF20NE50PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching ...
Low On Resistance N Channel Power MOSFET Guangdong Hottech IRLML2402 in SOT 23 Molded Plastic Package
Product OverviewThis N-CHANNEL POWER MOSFET, DSG312, is designed for surface mount applications. It features ultra-low on-resistance and is housed in a SOT-23 case made of molded plastic with UL flammability classification 94V-0. It is moisture sensitive, rated Level 1 per J-STD-020, and weighs ...
Low gate charge trench n channel mosfet HUASHUO HSBA0715 designed for synchronous buck converters
Product Overview The HSBA0715 is a high-performance Super trench N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, with 100% EAS guaranteed and full functional ...
Power switching MOSFET HUASHUO FDN335N featuring low RDS ON and excellent dv dt effect at 20V voltage
Product Overview The FDN335N is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in most small power switching and load switch applications. This fast-switching MOSFET operates at 20V and features super low gate charge, excellent Cdv/dt effect decline, and ...
100V P channel MOSFET HUASHUO HSS0127 trench technology super low gate charge switching component
Product Overview The HSS0127 is a P-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements ...
Load Switching Power MOSFET Guangdong Hottech HKTQ30N03 Featuring Trench Technology and Low Gate Charge
Product OverviewThe v4.0 N-Channel Enhancement Mode Power MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications including high current load applications, load switching, hard switched and high ...
Durable P Channel MOSFET HUASHUO HSBB10P15 Featuring Low Gate Charge and Green Product Certification
Product Overview The HSBB10P15 is a P-Channel Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, and is 100% EAS guaranteed with ...
N channel power MOSFET Guangdong Hottech HKTD50N03 suitable for load switch and DC to DC converters
Product OverviewThe HKTD50N03 is an N-CHANNEL Power MOSFET designed for efficient power management. It features ultra-low on-resistance and is suitable for low power DC to DC converter applications and load switch applications. This surface mount device comes in a TO-252 package.Product AttributesBr...
Fast Switching N Channel MOSFET HUASHUO HSBB4052 with Advanced Trench Technology and RoHS Compliance
Product Overview The HSBB4052 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and ...
N channel enhancement mode MOSFET Hangzhou Silan Microelectronics SVS11N65FJD2 for power electronics
Product DescriptionThe SVS11N65D/F/S/FJD2 is an N-channel enhancement mode high voltage power MOSFET from Silan Microelectronics, utilizing advanced super junction MOS technology. This design offers low conduction and switching losses, enabling high efficiency, high power density, and superior ...
Durable N channel MOSFET Guangdong Hottech HKTD90N03 designed for power switching and drive circuits
Product OverviewThe HKTD90N03 is an N-channel MOSFET designed for efficient power switching applications. It features low on-resistance, fast switching speed, and is easily designed for drive circuits and paralleling. This MOSFET is suitable for various applications requiring reliable power ...
N Channel MOSFET Guangdong Hottech SI2306 Plastic Encapsulation Ideal for Various Electronic Circuits
Product OverviewThe SI2306 is a plastic-encapsulated N-Channel MOSFET designed for general-purpose applications. It offers reliable and rugged performance with low on-resistance, making it suitable for various switching and amplification tasks.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO...
Hangzhou Silan Microelectronics SVF20N50F Power MOSFET with Optimized Switching Characteristics
Product OverviewThe SVF20N50F/PN is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. Designed with an improved planar stripe cell and guard ring terminal, it offers reduced on-state resistance, superior switching ...
