Single FETs, MOSFETs
1200V SiC N-Channel MOSFET Bruckewell CMS120N080WK Fast Switching for High Voltage Power Electronics
Product Overview The Bruckewell CMS120N080WK is a SiC N-Channel 1200-V (D-S) MOSFET designed for high-speed switching applications. It offers high blocking voltage and fast reverse recovery, leading to low capacitance and high system efficiency. This MOSFET is ideal for demanding applications such ...
Power MOSFET BORN BMF20N65G with 650 volt drain source voltage and 20 amp continuous current rating
Product Overview The BMx20N65 is a high-performance N-Channel MOSFET designed by BORN SEMICONDUCTOR, INC. This MOSFET features a high drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 20A, with a low on-resistance (RDS(ON)) of 0.5 at VGS=10V. Its fast switching characteristi...
Power management component BORN BM3402 N Channel Enhancement Mode MOSFET in compact SOT 23 package
Product Overview The BM3402 is an N-Channel Enhancement-Mode MOSFET in a SOT-23 package, designed for efficient power management. It features low RDS(on) at 10V VGS and 3.3V logic-level control, making it suitable for DC-to-DC converters, power management in battery-driven portables, low-side load ...
electronic component Bruckewell MSH60N063 N Channel MOSFET with excellent RDS ON and low gate charge
Product Overview The MSH60N063 is a high-performance N-Channel MOSFET from Bruckewell Technology Corporation, designed with extreme high cell density for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device ...
Fast Switching N Channel MOSFET BLUE ROCKET BRB80N08A Suitable for Demanding Power Supply Applications
Product Overview The BRB80N08A is an N-channel MOSFET designed for high-efficiency switching DC/DC converters and switch-mode power supplies. It features low gate charge, low feedback capacitance, and fast switching speeds, making it suitable for demanding power applications. This product is halogen...
Power management solution BORN BM2300 N Channel MOSFET with RoHS compliance and SOT 23 compact package
Product Overview The BM2300 is an N-Channel MOSFET featuring advanced trench process technology and high-density cell design for ultra-low on-resistance. It is designed for efficient power management applications and is RoHS compliant, packaged in a SOT-23. This MOSFET offers excellent electrical ...
60 Volt Dual N Channel MOSFET Bruckewell MSHM60N29D for Motor Control and DC DC Converter Applications
Product Overview The MSHM60N29D is a Dual N-Channel 60-V (D-S) MOSFET from Bruckewell Technology Corporation, utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust high-energy pulse handling in ...
P Channel MOSFET Bruckewell MSD100P12 designed to meet RoHS compliance and green device requirements
Product Overview The MSD100P12 is a high-performance P-Channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function ...
High Density Cell Design and Ultra Low On Resistance P Channel MOSFET BORN BMS2301 in SOT 323 Package
Product Overview The BMS2301 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-323 surface mount package, offering efficient performance for various applications. Key electrical characteristics ...
N Channel 100 Volt Mosfet Bruckewell MSP100N27 Trench DMOS Technology for Fast Switching Applications
Product Overview The MSP100N27 is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is well-suited for high...
N Channel MOSFET for Power Switch Circuits BORN BMF4N65 Featuring Fast Switching and Low Gate Charge
Product Overview The BMx4N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET features a high drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 4A. It offers fast switching ...
N Channel MOSFET Bruckewell MSHM30N46 30 Volt Drain Source Voltage for Synchronous Buck Converter
Product Overview The MSHM30N46 is a high-performance N-Channel 30-V (D-S) MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS ...
N Channel MOSFET BLUE ROCKET BRCS019N10SHTL with Low On Resistance and High Continuous Drain Current
Product Overview The BRCS019N10SHTL is an N-Channel MOSFET designed for high-power applications. It features a TOLL-8L plastic package and is a Halogen-Free (HF) product. This MOSFET is suitable for use in LCD TV appliances and high-power inverter systems, offering a drain-source voltage of 100V and ...
SOT 23 P Channel MOSFET Bruckewell MS40P05 Suitable for MB VGA Vcore POL and Load Switch Applications
Product Overview The MS40P05AU is a high-performance P-Channel MOSFET featuring extreme high cell density, designed to deliver excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full ...
Power BORN SI2300 N Channel MOSFET featuring super high dense cell design and compact SOT 23 package
Product Overview The SI2300 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. It features a super high dense cell design for extremely low RDS(ON), offering reliable and rugged performance. This MOSFET is available in a SOT-23 surface mount package, making it suitable for various electronic ...
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with advanced trench DMOS technology
Product Overview The MSH30P100 is a P-Channel 30-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal RDS(ON), superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high ...
switching P Channel MOSFET BORN AO3407 with trench process and low on resistance in SOT 23 package
Product Overview The AO3407 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, offering efficient performance for various applications. Product Attributes Brand: Not ...
Power Switching N Channel MOSFET BORN BNT15N10 with Low Gate Charge and 15A Continuous Drain Current Rating
Product Overview The BNT15N10 is an N-Channel MOSFET featuring Trench Technology for enhanced performance. It offers a Drain-Source Voltage (VBR(DSS)) of 100V and a continuous Drain Current (ID) of 15A. Key advantages include low RDS(ON) at 88m (typ.) at 10V, low gate charge, and low gate resistance...
60 Volt P Channel MOSFET Bruckewell MS23P11B featuring low gate charge and excellent RDS ON for load switching
Product Overview The MS23P11B is a high-performance P-channel MOSFET featuring advanced trench technology with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green ...
Power Switch N Channel MOSFET BLUE ROCKET BRD4N70 Featuring Low Gate Charge and Fast Switching Speeds
Product Overview The BRD4N70 is an N-channel MOSFET in a TO-252 plastic package, designed for power switch circuits in adapters and chargers. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for these applications. Product Attributes Brand: FS ...
