Single FETs, MOSFETs
Industrial Power MOSFET Bestirpower BMB65N380E1 Featuring 650V Breakdown Voltage and RoHS Compliant Design
Product Overview This Power MOSFET is designed for high-performance power applications, offering robust features such as PFC, hard, and soft switching topologies. It is suitable for both industrial and consumer power supplies. The device is free from Halogen and RoHS compliant, ensuring environmenta...
Low on resistance 160 milliohm silicon carbide mosfet Bestirpower BCZ120N160W1 suitable for high voltage dc dc converters
Product Overview The BCZ120N160W1 is a N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers a high blocking voltage of 1200V combined with low on-resistance (160 m typ.) and high-speed switching capabilities due to low capacitances. This MOSFET is easy to ...
High Commutation Ruggedness Bestirpower BMF65N100UC1 Power MOSFET with Optimized Charge Coupling
Product Overview The BMF65N100UC1 is a Super Junction Power MOSFET developed by Bestirpower, leveraging advanced super junction technology to achieve very low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the ...
SOT 23 Package Power MOSFET BL BLM3404 Offering Low RDS ON and Suitable for Load Switch Applications
Product Overview The Belling BLM3404 is a Pb-Free N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications. This device boasts high power and current handling capability. ...
N Channel Power MOSFET Bestirpower BMW60N076UC1 with Low On Resistance and Optimized Charge Coupling Technology
Product Overview The BMW60N076UC1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology. This MOSFET offers exceptionally low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. ...
Power MOSFET BL BLM04N06 B 60V 150A N Channel with low gate charge and high avalanche current rating
Product Overview The Belling BLM04N06 is a 60V N-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. This green product is suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, and ...
Power MOSFET BLP045N10 P N channel Enhanced type with low gate charge and high avalanche ruggedness
Product Overview The BLP045N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction loss, enhances switching performance, and improves avalanche energy. It is an ideal component for motor drivers and Battery Management ...
1200 Volt 100 Amp N Channel Silicon Carbide MOSFET with High Switching Speed Bestirpower BCBF120N21M1
Product Overview The BCBF120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It offers a 1200 V drain-to-source voltage and a continuous drain current of 100 A, with a low on-resistance of 21 m. This MOSFET provides significant benefits ...
P Channel MOSFET BL BLM3401 Featuring Low RDS ON and Lead Free Package for Power Switching Solutions
Product Overview The Belling BLM3401 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for applications such as load switching and Pulse ...
N Channel Power MOSFET Bestirpower BMD60N600C1 Designed for Low EMI and High Commutation Ruggedness
Product Overview The Bestirpower BMD60N600C1 is a high-performance N-Channel Power MOSFET designed with advanced super junction technology. It offers extremely low losses due to a very low Figure of Merit (FOM) of Rdson*Qg and Eoss, along with very high commutation ruggedness. Optimized charge ...
N Channel Enhancement Mode Power MOSFET BL BLM3400 Pb Free Device for Battery Protection and Switching
Product Overview The Belling BLM3400 is a Pb Free N-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching ...
Super junction power mosfet Bestirpower BMD60N190C1 offering low on resistance and gate charge for power
Bestirpower BMD60N190C1 Super Junction Power MOSFET Product Overview The Bestirpower BMD60N190C1 is a Super Junction Power MOSFET utilizing bestirpowers advanced super junction technology. This design enables very low on-resistance and gate charge, leading to significantly higher efficiency through ...
N Channel Silicon Carbide MOSFET Bestirpower BCW120N40M2 with Low Reverse Recovery and High Frequency
Product Overview The Bestirpower BCW120N40M2 is an N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It features high switching speed with low gate charge and a fast intrinsic diode with low reverse recovery, contributing to system efficiency improvement and higher ...
switching device Bestirpower BMB80N180C1 N Channel MOSFET designed for power supplies and LED lighting
Product Overview The BMB80N180C1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology. This MOSFET offers exceptionally low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. ...
Low on resistance 18m and high blocking voltage 1200V Bestirpower BC018SG12SWSD Power MOSFET device
Product Overview The BC018SG12SWSD is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a high blocking voltage of 1200V combined with a low on-resistance of 18m, enabling system efficiency improvement and higher frequency applicability. Key ...
BL BL13N50 A power MOSFET featuring 100 percent avalanche testing and RoHS compliance for operation
BL13N50 Power MOSFET Product Overview The BL13N50 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is well-suited for applications such as Switched-Mode Power ...
Switching Low EMI Bestirpower BMW65N190UC1 Super Junction MOSFET for Telecom and Server Equipment
Product Overview The BMx65N190UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design facilitates significantly higher efficiency through optimized charge coupling technology, ...
650 Volt 35 Amp N Channel Power MOSFET Bestirpower BMW65N100UC1 Featuring Ultra Fast Body Diode Technology
Product Overview The BMW65N100UC1 is a 650 V, 35 A N-Channel Power MOSFET from Bestirpower, leveraging advanced super junction technology for exceptionally low on-resistance and gate charge. This design optimizes charge coupling for significantly higher efficiency, offering designers the advantage ...
ASDsemi ASDM40N100P T 40V N Channel MOSFET featuring low on resistance and synchronous rectification
Product Overview The Ascend Semiconductor ASDM40N100P is a 40V N-Channel MOSFET designed for high-performance applications. It features low on-resistance and fast switching speeds, making it ideal for DC/DC converters, on-board server power, and synchronous rectification. This device is 100% ...
N Channel Silicon Carbide Power MOSFET Bestirpower BCBF120N40M1 ideal for solar inverters EV charging stations
Product Overview The BCBF120N40M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers superior system efficiency, higher frequency applicability, and increased power density due to its high switching speed, low gate charge, and fast intrinsic ...
