Single FETs, MOSFETs
1200 Volt 34 Amp N Channel Silicon Carbide Power MOSFET Bestirpower BCBF120N80M1 for Power Conversion
Bestirpower BCBF120N80M1 N-Channel Silicon Carbide Power MOSFET The Bestirpower BCBF120N80M1 is a 1200 V, 34 A, 80 m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. This MOSFET offers significant advantages including system efficiency improvement, ...
Power MOSFET Dual N Channel ASDsemi ASDM30DN30E R 30 Volt designed for and power management solutions
Product Overview The ASDM30DN30E is a 30V Dual N-Channel Power MOSFET from Ascend Semiconductor Co., Ltd. It features advanced high cell density Trench technology, offering 100% EAS Guaranteed, super low gate charge, and excellent CdV/dt effect decline. This MOSFET is designed for high-performance ...
650V 11A Super Junction Power MOSFET Bestirpower BMD65N380E2 with Low On Resistance and Gate Charge
Product Overview The BMD65N380E2 is a 650V, 11A, 380m Super Junction Power MOSFET from Bestirpower, leveraging advanced super junction technology for very low on-resistance and gate charge. This device is designed to achieve high efficiency through optimized charge coupling technology, offering ...
1200V 60A N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N40M1 for Industrial Power Systems
BCZ120N40M1 N-Channel Silicon Carbide Power MOSFET The BCZ120N40M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It offers a 1200V drain-to-source voltage, 60A continuous drain current, and a low on-resistance of 40m. This MOSFET provides ...
Low loss N Channel MOSFET Bestirpower BMF65N120UC1 with super junction technology and fast switching
Product Overview The BMF65N120UC1 is a high-performance N-Channel Power MOSFET from Bestirpower, leveraging advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design contributes to significantly higher efficiency, making it ideal for applications ...
power mosfet Bestirpower BCZ65N45M1 silicon carbide 650 volt 45 milliohm for industrial and telecom power
Product Overview The BCZ65N45M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. Featuring a 650V breakdown voltage and a low on-resistance of 45 m, this MOSFET offers significant advantages including improved system efficiency, higher frequency ...
Power MOSFET 800V 23A N Channel Bestirpower BMW80N180C1 with Ultra Fast Body Diode and Rugged Design
Product Overview The BMW80N180C1 is an 800V, 23A N-Channel Power MOSFET from Bestirpower, utilizing advanced super junction technology for very low on-resistance and gate charge. This MOSFET offers extremely low losses due to its very low FOM Rdson*Qg and Eoss, contributing to high efficiency ...
Silicon Carbide N Channel Power MOSFET Bestirpower BCW120N40M1 1200V for Industrial Power Applications
BCW120N40M1 - 1200V 40m Silicon Carbide Power MOSFET Product Overview The BCW120N40M1 is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power applications. It offers system efficiency improvement, higher frequency applicability, increased power density, and reduced ...
Super Junction Power MOSFET Bestirpower BMD65N340E2 with Low Switching Losses and High Drain Current
Product Overview The BMD65N340E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This device is designed to deliver significantly higher efficiency through optimized charge coupling ...
Silicon N channel Enhanced MOSFET BL BL18N20 designed for high speed switching and power electronics
Product Overview The BL18N20 is a silicon N-channel Enhanced MOSFET designed for high-frequency switching applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy capabilities. This transistor is well...
Low On Resistance 95m Typ 100V N Channel MOSFET ASDsemi ASDM100N15KQ R Suitable for UPS Applications
Product Overview The ASDM100N15KQ is a 100V N-Channel MOSFET designed for high-performance applications. It offers a continuous drain current of 15A and a low on-resistance of 95m (Typ.) at VGS = 10V. Key features include low total gate charge, low reverse transfer capacitance, improved dv/dt ...
Lead Free P Channel Power MOSFET BL BLM9435 with Low RDS ON and Enhanced Switching Performance
Product Overview The Belling BLM9435 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for use as a load switch or in Pulse Width ...
N Channel Silicon Carbide MOSFET 1700V 5A Bestirpower BCBF170N1000P1 for DC DC Converter Applications
Product Overview The Bestirpower BCBF170N1000P1 is a 1700V, 5A N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitance, and is easy to parallel and simple to drive. This ...
Depletion mode MOSFET ARK micro DMZ1521E optimized for telecom infrastructure and converter circuits
DMZ1521E High-threshold Voltage Depletion-Mode Power MOSFETThe DMZ1521E is a high-threshold voltage, depletion-mode power MOSFET from ARK Microelectronics Co., Ltd. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure, offering ESD improved capability ...
ASDsemi ASDM3401ZA R P Channel MOSFET with Excellent On Resistance and Maximum DC Current Capability
Product Overview The Ascend Semiconductor ASDM3401ZA is a P-Channel MOSFET designed for high-density cell applications, offering extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is suitable for PWM applications, load switching, and power management scenarios. ...
High voltage N Channel MOSFET Bestirpower BCZ120N21M1 with 100 percent avalanche tested reliability
Product Overview The BCZ120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. With a robust 1200 V breakdown voltage and a low on-resistance of 21 m, this MOSFET offers significant system efficiency improvements, higher frequency applicabili...
n channel enhanced power mosfet BL BLP02N06 T with low gate charge and improved switching performance
Product Overview The Belling BLP02N06 is an N-channel Enhanced Power MOSFET designed using advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy capabilities. It is an ideal component for synchronous ...
High voltage 650V Silicon Carbide MOSFET Bestirpower BCBF65N45M1 45m on resistance power transistor
Product Overview The BCBF65N45M1 is a 650V, 45m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability. This MOSFET is ...
voltage clamping ARK micro DMX1315EL power MOSFET designed for Type C PD chargers and current sources
Product OverviewThe DMZ1315EL/DMX1315EL is an UltraVt depletion-mode power MOSFET manufactured by ARK Microelectronics. It utilizes proprietary advanced planar and Ultrahigh Vth technologies, offering ESD improved capability and a high threshold voltage. This device is designed for applications ...
1700V 8A N Channel Silicon Carbide Power MOSFET Bestirpower BCBF170N650T1 for Industrial Electronics
Silicon Carbide Power MOSFET The BCBF170N650T1 is a 1700V, 8A, 650m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers superior performance characteristics, including high blocking voltage, low on-resistance, and high-speed switching ...
