Single FETs, MOSFETs

quality Low EMI Super Junction Power MOSFET Bestirpower BMW65N075UC1 Suitable for Switch Mode Power Supplies factory

Low EMI Super Junction Power MOSFET Bestirpower BMW65N075UC1 Suitable for Switch Mode Power Supplies

Product Overview The BMW65N075UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to deliver exceptionally low on-resistance and gate charge. This high-efficiency device utilizes optimized charge coupling technology, providing designers with ...

quality 1200V silicon carbide mosfet Bestirpower BCW120N21M1 with low on resistance and halogen free design factory

1200V silicon carbide mosfet Bestirpower BCW120N21M1 with low on resistance and halogen free design

Product Overview The BCW120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications in solar inverters, EV charging stations, UPS systems, and industrial power supplies. It offers a robust 1200V rating and a low on-resistance of 21m, contributing to ...

quality Soft Switching Silicon N Channel MOSFET ANHI ASW65R072EFDA Suitable for Series Resonance Half Bridge factory

Soft Switching Silicon N Channel MOSFET ANHI ASW65R072EFDA Suitable for Series Resonance Half Bridge

Product Overview The ASW65R072EFDA is a Silicon N-Channel MOSFET designed for soft switching applications. Its key features include a low drain-source on-resistance of 0.060 (typ.) and easy gate switching control with an enhancement mode. This MOSFET is suitable for boost PFC switches, half-bridge, ...

quality N Channel Silicon MOSFET ANHI AUB034N10 Designed for Hard Switching and High Speed DC DC Conversion factory

N Channel Silicon MOSFET ANHI AUB034N10 Designed for Hard Switching and High Speed DC DC Conversion

Product Overview The AUP034N10 and AUB034N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They feature a low drain-source on-resistance (RDS(on) = 2.9m typ.), enhanced body diode dv/dt capability, and improved avalanche ruggedness. These MOSFETs are ideal for ...

quality High Speed Power Switching Device AUP049N10 N Channel Silicon MOSFET with Robust Avalanche Ruggedness factory

High Speed Power Switching Device AUP049N10 N Channel Silicon MOSFET with Robust Avalanche Ruggedness

Product Overview The AUP049N10 and AUB049N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly well-suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters in telecommunicatio...

quality N Channel MOSFET TO263 Package 6 Milliohm RDS on 240 Amp Pulse Current ANHI AUB060N08AG Suitable for DC DC Converters factory

N Channel MOSFET TO263 Package 6 Milliohm RDS on 240 Amp Pulse Current ANHI AUB060N08AG Suitable for DC DC Converters

Product Overview The AUA060N08AG series are N-Channel MOSFETs designed for synchronous rectification and high-speed switching applications. These devices are suitable for DC/DC converters, SMPS, high-speed circuits, and industrial telecom applications. Key features include low drain-source on...

quality Power Management Bestirpower BMB65N100UC1 Super Junction Power MOSFET for Server and Solar Inverter factory

Power Management Bestirpower BMB65N100UC1 Super Junction Power MOSFET for Server and Solar Inverter

Product Overview The BMB65N100UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers ...

quality 850V Depletion Mode MOSFET ARK micro DMZ85200E suitable for power supplies and current regulators factory

850V Depletion Mode MOSFET ARK micro DMZ85200E suitable for power supplies and current regulators

Product OverviewThe DMZ85200E is an 850V Depletion-Mode Power MOSFET from ARK Microelectronics Co., Ltd. Designed for normally-on applications, it features ESD improved capability, fast switching speed, and a high breakdown voltage of 850V. Its small SOT-23 package and RoHS compliance make it ...

quality High Cell Density P Channel MOSFET Axelite Tech AM9435SA Featuring DMOS Trench Technology and Low On Resistance factory

High Cell Density P Channel MOSFET Axelite Tech AM9435SA Featuring DMOS Trench Technology and Low On Resistance

Product Overview The AM9435 is a P-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This advanced process is specifically designed to minimize on-state resistance, offering exceptional on-resistance and maximum DC current ...

quality ASDSemi ASDM30P11TD R P Channel MOSFET with 30 Volt Drain Source Voltage and Low On State Resistance factory

ASDSemi ASDM30P11TD R P Channel MOSFET with 30 Volt Drain Source Voltage and Low On State Resistance

Product Overview The Ascend Semiconductor ASDM30P11TD is a -30V P-Channel MOSFET designed for power switch circuits in adaptors, chargers, and notebook AC-in load switches. It features low FOM (RDS(on)Qgd), 100% avalanche testing, and is easy to use and drive. This RoHS compliant component offers a ...

quality ANPEC APM9435KC TRG P Channel Enhancement Mode MOSFET Designed for Performance in Portable Equipment factory

ANPEC APM9435KC TRG P Channel Enhancement Mode MOSFET Designed for Performance in Portable Equipment

Product Overview The SINOPOWER APM9435K is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a super high dense cell design, offering reliable and rugged performance. This device is suitable for use in notebook computers, portable equipment, and battery...

quality Power MOSFET ADQ120N080G2 1200V Silicon Carbide N Channel Suitable for Flyback and Forward Converters factory

Power MOSFET ADQ120N080G2 1200V Silicon Carbide N Channel Suitable for Flyback and Forward Converters

Product Overview The ADQ120N080G2, ADW120N080G2, and ADG120N080G2 are 1200V N-Channel Silicon Carbide Power MOSFETs designed for applications such as asymmetrical bridge converters, inverters, and single-switch forward and flyback converters. These devices feature a low drain-source on-resistance of ...

quality Low Gate Charge N Channel MOSFET ANHI ASD65R350E Designed for PC Power Supplies and Telecom Power Applications factory

Low Gate Charge N Channel MOSFET ANHI ASD65R350E Designed for PC Power Supplies and Telecom Power Applications

Product Overview The ASA MO 1. 2. 3. A65R350 OSFET is a N-Channel MOSFET designed for Power Factor Correction (PFC) and hard switching applications. It is suitable for use in PC power supplies, LCD Adaptors, lighting, servers, and telecom power applications. Key features include low drain-source on...

quality Low Capacitance Silicon Carbide MOSFET Bestirpower BCZ120N16M1 1200V Blocking Voltage for Power Supplies factory

Low Capacitance Silicon Carbide MOSFET Bestirpower BCZ120N16M1 1200V Blocking Voltage for Power Supplies

Product Overview The BCZ120N16M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It features a high blocking voltage of 1200 V and a low on-resistance of 16 m, enabling system efficiency improvements and higher frequency applicability. With its high...

quality Super Junction Power MOSFET 650V Bestirpower BMB65N046UE1 with low switching losses and low gate charge factory

Super Junction Power MOSFET 650V Bestirpower BMB65N046UE1 with low switching losses and low gate charge

BMB65N046UE1: 650V, 46m Super Junction Power MOSFET Product Overview The BMB65N046UE1 is a high-performance Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve very low on-resistance and gate charge. This device offers significantly higher efficiency through ...

quality High speed switching N Channel MOSFET AUB062N08BG with rugged avalanche and enhanced diode features factory

High speed switching N Channel MOSFET AUB062N08BG with rugged avalanche and enhanced diode features

Product Overview The AUA062N08BG series are N-Channel MOSFETs designed for synchronous rectification and hard switching applications. These devices are ideal for high-speed circuits, DC/DC converters, SMPS, telecom, and industrial applications. Key features include low drain-source on-resistance, ...

quality Power MOSFET ASA65R850E N Channel Silicon Device with Low On Resistance and Versatile Package Options factory

Power MOSFET ASA65R850E N Channel Silicon Device with Low On Resistance and Versatile Package Options

Product Overview The ASA65R850E, ASU65R850, and ASD65R850E are N-Channel Silicon MOSFETs designed for various power applications. These devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for boost PFC switch, single-ended flyback, PC power, PD ...

quality High Voltage Silicon N Channel MOSFET ASA80R290E Suitable for Flyback and Forward Topology Circuits factory

High Voltage Silicon N Channel MOSFET ASA80R290E Suitable for Flyback and Forward Topology Circuits

Product Overview The ASA80R290E and ASW80R290E are Silicon N-Channel Power MOSFETs designed for high-efficiency power conversion applications. These MOSFETs feature low drain-source on-resistance (RDS(on)) and easy gate control, making them ideal for single-ended flyback or two-transistor forward ...

quality 30V N Channel MOSFET SOT 23 Package Featuring ASDsemi ASDM3400ZA R Trench Power LV MOSFET Technology factory

30V N Channel MOSFET SOT 23 Package Featuring ASDsemi ASDM3400ZA R Trench Power LV MOSFET Technology

Product Overview The ASDM3400ZA is a 30V N-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for applications such as battery protection, load switching, and power management. ...

quality TO220F Package N Channel MOSFET AUA039N10 with Low RDS on and Typical Threshold Voltage 1.2 to 2.5V factory

TO220F Package N Channel MOSFET AUA039N10 with Low RDS on and Typical Threshold Voltage 1.2 to 2.5V

Product Overview The AUN036N10, AUP039N10, AUA039N10, and AUB039N10 are N-Channel Silicon MOSFETs designed for applications requiring efficient switching. These enhancement-mode devices offer low drain-source on-resistance and are suitable for single-ended flyback or two-transistor forward ...