Single FETs, MOSFETs

Product Overview The AUA060N08AG series are N-Channel MOSFETs designed for synchronous rectification and high-speed switching applications. These devices are suitable for DC/DC converters in SMPS, telecommunications, and industrial sectors. Key features include low drain-source on-resistance, high-speed switching, enhanced body diode, and rugged avalanche capability. Product Attributes Brand: AUA Channel Type: N-Channel Technology: MOSFET Body Diode: Enhanced Avalanche

Product Overview The ASDM3020 is a 30V Dual N-Channel MOSFET from Ascend Semiconductor Co., Ltd. Designed for enhancement mode operation and featuring fast switching capabilities, it is ideal for power management applications, particularly in inverter systems and for synchronous rectification. Its logic-level control at 5V makes it highly versatile for various power electronics designs. Product Attributes Brand: Ascend Semiconductor Product Line: ASDM Package Type: SOP-8

Product Overview The ASA65R350E, ASU65R350, and ASD65R350E are N-Channel Silicon MOSFETs designed for various power applications. They feature a low drain-source on-resistance (RDS(on)) and are easy to control, operating in enhancement mode. These MOSFETs are suitable for PFC stages, hard switching PWM, resonant switching PWM, PC Silverbox, Adaptors, LCD & PDP TVs, Lighting, Server Power, Telecom Power, and UPS applications. Product Attributes Brand: Not specified Origin: Not

Product Overview The ASA60R210E is a Silicon N-Channel MOS MOSFET designed for high-efficiency power switching applications. It features a low drain-source on-resistance of 0.18 (typ.) and is easy to control due to its enhancement mode operation. This MOSFET is suitable for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge. Its applications span across PC

Product Overview The AUD060N055, AUN042N055, AUB050N055, and AUP060N055 are N-Channel Silicon MOSFETs designed for high-efficiency power conversion applications. These enhancement-mode devices feature low drain-source on-resistance and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Product Attributes Brand: Not specified Origin: Not

Product Overview The ASW65R041EFDA is a Silicon N-Channel MOSFET designed for soft switching boost PFC and full bridge topologies. It is ideal for applications such as phase-shift-bridge (ZVS), LLC half bridge, AHB, and LLC half bridge, commonly found in Telecom Power, EV Charging, Solar applications, and Server Power. This MOSFET features low drain-source on-resistance (RDS(on) = 0.035 typ.), easy gate control, and operates in enhancement mode with a threshold voltage (Vth)

Product Overview This product line includes models ASW65R120EFD, ASA65R120EFD, and ASR65R120EFD. Further details regarding its function, usage, advantages, and application scenarios are not explicitly provided in the input text. Product Attributes No specific product attributes such as brand, origin, material, or color were identified in the provided text. Technical Specifications Model Specification ASW65R120EFD 65R120EFD ASA65R120EFD 65R120EFD ASR65R120EFD 65R120EFD

Product Overview The AUB033N08BG, AUP033N08BG, and AUW033N08BG are N-Channel MOSFETs designed for synchronous rectification and hard switching in DC/DC converters. They are suitable for high-speed circuits, telecommunications, and industrial applications. Key features include low drain-source on-resistance, high switching speed, enhanced body diode ruggedness, and dv/dt capability. Product Attributes Brand: AUB/AUP/AUW Channel Type: N-Channel Technology: MOSFET Technical

Product OverviewThe ARK Microelectronics DMZ1315EL/DMX1315EL is an UltraVt depletion-mode power MOSFET featuring ESD improved capability and a proprietary advanced planar technology with Ultrahigh Vth. This normally-on device utilizes its sub-threshold characteristics to provide stable power to loads and clamp voltage without the need for a Zener diode, thereby reducing circuit consumption. It is suitable for applications such as quick chargers, current sources, voltage

Product Overview The AUB033N08BG series are N-Channel MOSFETs designed for high-speed switching applications. These devices feature low drain-source on-resistance, high switching speed, enhanced body diode, and rugged avalanche ruggedness. They are ideal for synchronous rectification in DC/DC converters, hard switching and high-speed circuits, and applications in telecom and industrial sectors. Available in TO-263, TO-220, and TO-247 packages. Product Attributes Brand: AUB

Product Overview The AUP034N10, AUB034N10, and AUR030N10 are N-Channel MOSFETs designed for high-efficiency applications. These devices feature low drain-source on-resistance, high-speed power switching, and enhanced body diode dv/dt capability. They are ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), as well as hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Key performance parameters include a VDS of

Product Overview The AUR014N10 is a Silicon N-Channel MOS MOSFET designed for high-speed power switching applications. It features a low drain-source on-resistance of 1.2m (typ.) and enhanced body diode dv/dt capability, making it ideal for synchronous rectification in SMPS, hard switching, and high-speed DC/DC circuits within the telecommunications and industrial sectors. Its robust design also includes enhanced avalanche ruggedness. Product Attributes Brand: Not specified

Product Overview The Ascend Semiconductor ASDM40N60KQ is a 40V N-Channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. The MOSFET offers excellent thermal dissipation properties and special process technology for high ESD capability. It is suitable for load switching, hard switched and high frequency circuits, and uninterruptible

Product Overview The ASA60R330E and ASD60R330E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance and are easy to control, making them suitable for boost PFC switches, single-ended flyback converters, half-bridge, asymmetric half-bridge, two-transistor forward, and series resonance half-bridge topologies. Key applications include PC power supplies, PD adapters, LCD & PDP TVs,

Product Overview The ASA60R090EFD and ASW60R090EFD are N-Channel Silicon MOSFETs designed for soft-switching applications. They are ideal for Boost PFC, Half-Bridge, Full-Bridge, Phase-Shift-Bridge (ZVS), and LLC resonant topologies. These MOSFETs are suitable for use in Telecom Power, EV Charging, Solar Inverters, and Application Servers. Key features include low drain-source on-resistance (RDS(on)) and easy gate switching control, with a typical RDS(on) of 0.080 and a

Product Overview The ASA65R280E, ASD65R280E, and ASM65R280E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These enhancement-mode MOSFETs feature low drain-source on-resistance (RDS(ON) = 240m typ.) and easy gate switching control. They are ideal for single-ended flyback or two-transistor forward topologies in applications such as PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Product Attributes Brand: Not specified Origin:

Product Overview The AUP034N10, AUB034N10, and AUR030N10 are N-Channel Silicon MOSFETs designed for high-performance applications. They are particularly suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC conversion circuits in telecommunications and industrial sectors. Key features include low drain-source on-resistance, high-speed power switching, an enhanced body diode with dv/dt capability, and improved

Product Overview The ASW65R031EFD is a Silicon N-Channel MOSFET designed for high-efficiency power conversion applications. It features a low drain-source on-resistance of 0.027 (typ.) and is easy to control with a gate switching enhancement mode. This MOSFET is ideal for soft switching boost PFC circuits, HB, AHB, and LLC half-bridge and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC configurations. Its applications span Server Power, Telecom Power, EV

Product Overview The Ascend Semiconductor ASDM30N90KQ is a 30V N-Channel MOSFET designed for efficient power management. It features advanced trench technology, providing excellent RDS(ON) and low gate charge for optimal performance. This MOSFET offers high power and current handling capabilities, making it suitable for load switch and PWM applications. Product Attributes Brand: Ascend Semiconductor Product Line: ASDM Technology: Advanced Trench Technology Channel Type: N

Product Overview The AUP026N085, AUB026N085, and AUR020N085 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters within the telecommunications and industrial sectors. Key features include low drain-source on-resistance (RDS(on)), enhanced body diode dv/dt capability, and improved avalanche ruggedness, ensuring