Single FETs, MOSFETs

Product Overview The AUN065N10 and AUP065N10 are N-Channel Silicon MOSFETs designed for applications requiring efficient power management. Leveraging proprietary new trench technology, these MOSFETs offer a fast recovery body diode and low gate charge, contributing to minimized switching losses. They are ideal for synchronous rectification, general power management, and load switch applications. Product Attributes Brand: Not specified Origin: Not specified Material: Silicon

Product Overview The AUP034N06 is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features low drain-source on-resistance (RDS(on) = 3m typical), enhanced body diode dv/dt capability, and superior avalanche ruggedness. This MOSFET is ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching circuits, and high-speed DC/DC converters within the telecommunications and industrial sectors. Product Attributes

Product OverviewThe ARK Microelectronics DMX42C10A/DMS42C10A is a 100V N-Channel Depletion-Mode Power MOSFET designed for various applications requiring normally-on switches, surge current suppression, and constant current sources. Leveraging proprietary advanced planar technology with a rugged polysilicon gate cell structure, these MOSFETs offer excellent temperature characteristics, fast switching speeds, and high reliability. They are ideal for automotive electronic

Product Overview The ASDM100R045NQ is a 100V N-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(on). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. The MOSFET is housed in an excellent package for effective heat dissipation and is optimized for synchronous rectification. Its applications include automotive systems, hard-switched and high-frequency circuits, BLDC motor

Product OverviewThe FTD03N20G is a 200V N-Channel Enhancement-Mode MOSFET from ARK Microelectronics Co., Ltd. It features a rugged polysilicon gate cell structure, integrated gate-to-source resistor and Zener diode, low on-resistance, low threshold voltage, and low input capacitance. This MOSFET offers fast switching speeds, is free from secondary breakdown, and is available in RoHS compliant and Halogen-free options. It is suitable for applications such as amplifiers,

Product Overview The DMZ6005E is a Depletion-Mode Power MOSFET from ARK Microelectronics, featuring an advanced planar technology and a rugged polysilicon gate cell structure. It offers ESD improved capability, fast switching speed, and is RoHS compliant with a halogen-free option available. This device is designed for applications requiring normally-on switches, SMPS start-up circuits, linear amplifiers, converters, and constant current sources, particularly in the

Product Overview This series of N-Channel Silicon MOSFETs, including models AUP056N08BGL, AUD056N08BGL, AUN050N08BGL, AUA056N08BGL, and AUB056N08BGL, are designed for efficient power management applications. They feature low drain-source on-resistance (RDS(ON) = 4.9m typ.) and easy gate switching control due to their enhancement mode operation with a typical threshold voltage (Vth) of 1.2 to 2.5 V. These MOSFETs are suitable for single-ended flyback or two-transistor forward

Product OverviewThe ARK Microelectronics DMX11C55EA is a 600V N-Channel Depletion-Mode Power MOSFET designed for various switching and current source applications. It features a depletion mode (normally-on) operation, free from secondary breakdown, and utilizes proprietary advanced planar technology with a rugged polysilicon gate cell structure. This MOSFET offers improved ESD capability, high input impedance, and is RoHS compliant, with a halogen-free option available

Product OverviewThe FTE15C35G is a 350V N+P Dual Channel MOSFET from ARK Microelectronics Co., Ltd. It features proprietary advanced planar technology, a rugged polysilicon gate cell structure, and fast switching speed. This RoHS compliant and halogen-free available component is suitable for power management, load switch, and motor driver applications.Product AttributesBrand: ARK Microelectronics Co., Ltd.Origin: Chengdu, ChinaCertifications: RoHS Compliant, Halogen-free

Product OverviewThe ARK Microelectronics DMX22C40A is a 400V depletion-mode (normally-on) Power MOSFET designed for high-voltage applications. It features fast switching speeds, a small SOT-89 package, and is RoHS compliant with a halogen-free option available. This MOSFET is suitable for use in solid-state relays, converters, linear amplifiers, constant current sources, and power supply circuits, including telecom applications.Product AttributesBrand: ARK Microelectronics Co

Product OverviewThe DMX1072/DMS1072 are depletion-mode (normally-on) power MOSFETs from ARK Microelectronics, utilizing proprietary advanced planar technology and a rugged polysilicon gate cell structure. These devices offer ESD improved capability and fast switching speeds, making them suitable for suppressing surge current, acting as normally-on switches, constant current sources, and protection circuits. They are RoHS compliant with halogen-free options available.Product

Product OverviewThe FTF50P35DHVT is a Dual P-Channel 350V Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features proprietary advanced planar technology, a rugged polysilicon gate cell structure, and advanced high Vth technology. This product is RoHS compliant and available in a halogen-free option. It is designed for applications requiring high voltage and specific P-Channel MOSFET characteristics.Product AttributesBrand: ARK Microelectronics Co., Ltd.Origin:

Product Overview The SI2300 is a N-Channel TrenchFET Power MOSFET designed for applications such as load switching in portable devices and DC/DC converters. It offers a drain-source voltage rating of 20V and is encapsulated in a SOT-23 plastic package. Product Attributes Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. Model: SI2300 Type: N-Channel MOSFET Package: SOT-23 Plastic-Encapsulate Marking: AOSHB Technical Specifications Symbol Parameter Test Conditions Min Typ

AKF20P45D Dual P-Channel 20V Enhancement Mode MOSFETThe AKF20P45D is a Dual P-Channel 20V Enhancement Mode MOSFET from ARK Microelectronics. It offers fast switching speed, low on-resistance, and a small footprint, making it suitable for charger switches, load switches for portable devices, and DC/DC converters. It features typical ESD protection of 2500V and is RoHS compliant and Halogen-free available.Product AttributesBrand: ARK Microelectronics Co., Ltd.Origin: Chengdu,

Product OverviewThe FTE02P15G and FTP02P15G are 150V P-Channel Enhancement Mode MOSFETs from ARK Microelectronics Co., Ltd. They feature a high-density cell design for low RDS(ON) and a rugged polysilicon gate cell structure. These MOSFETs are RoHS compliant and available in halogen-free options. They are 100% avalanche tested and suitable for applications such as reset switches for active clamp reset and DC-DC converters.Product AttributesBrand: ARK Microelectronics Co., Ltd

Product Overview This P-Channel Enhancement Mode Field Effect Transistor, manufactured by SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD., is designed for electronic applications. It is encapsulated in a SOT-23-3L plastic package. Product Attributes Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. Package Type: SOT-23-3L Encapsulation: Plastic Mode: P-Channel Enhancement Mode Transistor Type: Field Effect Transistor Technical Specifications Pin Configuration Specification

Product OverviewThe AKF30N5P0SX is a 30V N-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features low RDS(ON), low gate charge, and advanced high cell density trench technology. This RoHS compliant and Halogen-free available MOSFET is 100% avalanche tested and is suitable for high efficiency DC/DC converters, synchronous rectification, UPS inverters, power management, and battery-powered systems.Product AttributesBrand: ARK Microelectronics Co., Ltd

Product Overview The SI2302 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process is engineered to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is particularly well-suited for low-voltage applications such as power management in notebooks, portable equipment, battery-powered systems, and load switches, where high-side switching

ARK Microelectronics DMS6014E Depletion-Mode Power MOSFET The DMS6014E is a depletion-mode (normally on) power MOSFET from ARK Microelectronics, featuring ESD improved capability and a proprietary advanced planar technology with a rugged polysilicon gate cell structure. It offers fast switching speeds and is suitable for applications requiring normally-on switches, SMPS start-up circuits, linear amplifiers, converters, and constant current sources, particularly in the telecom

Product Overview The AP80N03D is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching applications. Product Attributes Brand: APM Microelectronics (implied by context) Product ID: AP80N03D Technology: Advanced Trench Technology Channel Type: N-Channel Mode: Enhancement