Single FETs, MOSFETs

Product Overview The AUP052N085, AUB050N085, and AUN045N085 are N-Channel Silicon MOSFETs designed for efficient switching applications. These enhancement-mode MOSFETs are easy to control and feature low drain-source on-resistance (RDS(ON)). They are ideal for use in single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting systems. Product Attributes Brand: Not specified Origin: Not specified

Product Overview The AP50P03NF is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching applications, including wireless impact and mobile phone fast charging. Product Attributes Brand: APM Microelectronics () Product ID: AP50P03NF Technology: P-Channel Enhancement Mode

Product Overview The ASA65R550E, ASU65R550E, ASD65R550E, and ASE65R550E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(on) = 0.50 typ.) and easy gate control for switching. They are ideal for use as boost PFC switches and in single-ended flyback or two-transistor forward topologies. Common applications include PD adaptors, LCD & PDP TVs, and LED lighting. Product

Product Overview The ASA70R600E is a Silicon N-Channel MOS Field-Effect Transistor designed for applications in single-ended flyback or two-transistor forward topologies. It is suitable for use in PD adaptors, LCD & PDP TVs, and LED lighting. Key features include a low drain-source on-resistance of 0.540 (typ.) and easy gate switching control due to its enhancement mode operation with a threshold voltage (Vth) ranging from 2.8 to 4.2 V. Product Attributes Brand: ASA Type:

Product Overview The SI2301 is a P-Channel logic enhancement mode power MOSFET manufactured using high cell density, DMOS trench technology. This advanced design is optimized to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power management applications in notebooks, portable equipment, battery-powered systems, load switches, and DSCs. Product Attributes Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.

Product Overview The AUN053N10, AUB056N10, and AUP056N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly suited for synchronous rectification in Switch Mode Power Supplies (SMPS), as well as hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Key features include low drain-source on-resistance (RDS(ON)) across various packages (DFN5X6, TO263, TO220), high-speed power switching

Product Overview The AP4N65D/Y is a 650V N-Channel Enhancement Mode VDMOSFET manufactured using a self-aligned planar technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is suitable for various power switching circuits, including Uninterruptible Power Supplies (UPS) and Power Factor Correction (PFC) applications. Product Attributes Brand: APM Microelectronics () Technology:

Product Overview The APM3095PU is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a super high-density cell design, offering reliable and rugged performance. Key specifications include -30V drain-source voltage and -8A continuous drain current. This lead-free device is compliant with RoHS standards and is suitable for power management in desktop computers and DC/DC converters. Product Attributes Brand: ANPEC Product Type: P-Channel

Product Overview The ASA80R900E is a Silicon N-Channel MOS Field-Effect Transistor (MOSFET) designed for high-efficiency power conversion applications. It features a low drain-source on-resistance (RDS(ON) = 620m typ.) and is easy to control with a gate switching enhancement mode. Ideal for single-ended flyback or two-transistor forward topologies, this MOSFET is suitable for use in PC power supplies, PD Adapters, LCD & PDP TVs, and LED lighting applications. Product

Product Overview The APG110N10NF is a 100V N-Channel Enhancement Mode MOSFET from APM Microelectronics, utilizing advanced APM-SGT technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, including DC/DC converters and LED backlighting. Product Attributes Brand: APM Microelectronics () Technology: APM-SGT Mode: N-Channel Enhancement Mode

Product Overview The AP60N03NF is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching applications. Product Attributes Brand: APM Microelectronics () Technology: Advanced Trench Technology Mode: N-Channel Enhancement Mode Technical Specifications Parameter

Product Overview The AO3401 is a P-Channel Enhancement Mode Field Effect Transistor designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This makes it suitable for applications such as load switches or Pulse Width Modulation (PWM). The standard AO3401 is Pb-free, meeting ROHS & Sony 259 specifications. The AO3401L is a Green Product ordering option, and both AO3401 and AO3401L

Product Overview The ASW65R110E is a Silicon N-Channel Power MOSFET designed for high-efficiency power conversion applications. It features low drain-source on-resistance (RDS(on)) of 0.095 (typ.) and easy gate control. This enhancement mode MOSFET is suitable for use in Boost PFC switches, half-bridge or resonance half-bridge topologies, server power supplies, telecom power, EV charging, solar inverters, and UPS applications. Product Attributes Brand: Not explicitly stated,

Product Overview The AP3P10MI is a P-Channel Enhancement Mode MOSFET from APM Microelectronics, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 5V. This MOSFET is designed for applications such as battery protection and general switching tasks. It features a VDS of -100V and a continuous drain current of -3A. Product Attributes Brand: APM Microelectronics Product ID: AP3P10MI Technology: Advanced

Product Overview The ASA60R180EFD is a Silicon N-Channel MOS MOSFET designed for high-efficiency power conversion applications. It features a low drain-source on-resistance (RDS(ON) = 0.140 typ.) and is easy to control, operating in enhancement mode. This MOSFET is ideal for use in half bridge, asymmetric half bridge, and series resonance half bridge topologies, commonly found in server power supplies, telecom power systems, and EV charging equipment. Product Attributes Brand

Product Overview The ADQ120N040BH and ADW120N040BH are 1200V N-Channel Silicon Carbide Power MOSFETs designed for high-efficiency power conversion applications. These devices offer a low drain-source on-resistance (RDS(ON) = 40m typ.) and are easy to control, featuring enhancement mode operation with a threshold voltage (Vth) of 2 to 4V. They are suitable for use in asymmetrical bridge converters, inverters, and single-switch forward and flyback topologies. Product Attributes

ASW65R038EFD MOSFET Silicon N-Channel MOS Product Overview The ASW65R038EFD is a Silicon N-Channel MOSFET designed for soft switching applications. It is suitable for Boost PFC switch, HB, AHB, and LLC half-bridge and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC applications. Key application areas include Server Power, Telecom Power, EV Charging, and Solar Inverters. This enhancement mode MOSFET features a low drain-source on-resistance (RDS(ON)) of 0

Product Overview The ASA70R380E, ASD70R380E, and ASB70R380E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. They are ideal for applications such as PC power supplies, PD adapters, LCD & PDP TVs, and LED lighting. Product Attributes Brand: Not specified Origin: Not

Product Overview The ASA65R550E, ASU65R550E, and ASD65R550E are N-Channel MOSFET transistors designed for high-efficiency power switching applications. These devices are optimized for boost PFC topologies, LCD & PD adaptors, and LED lighting. Key features include low drain-source on-resistance, easy gate control, and enhanced switching performance. They are suitable for forward or two-ended flyback converters and can be used in TV and LED lighting applications. Product

Product Overview The AUN065N10 is a Silicon N-Channel MOSFET designed for applications such as synchronous rectification, power management, and load switching. It features proprietary new trench technology, a fast recovery body diode, and low gate charge to minimize switching loss. This MOSFET is packaged in a DFN5x6 and offers a drain-source breakdown voltage of 100V. Product Attributes Brand: AUN Model: AUN065N10 Technology: Silicon N-Channel MOS Package: DFN5x6 Technical