Single FETs, MOSFETs

Product Overview The ASA65R220E and ASB65R220E are N-channel Silicon MOSFETs designed for high-efficiency power applications. They feature low drain-source on-resistance (RDS(ON) = 0.19 typ.) and easy gate switching control in an enhancement mode. These MOSFETs are ideal for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge. They are suitable for applications

Product Overview The ASDM4606S is a 30V N-channel and P-channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for PWM applications, load switching, and power management. The MOSFET is available in a SOP-8 surface mount package. Product Attributes Brand: Ascend Semiconductor Co., Ltd. Product Type: N AND P-Channel MOSFET Package Type: SOP-8 Lead Free: Yes Date: NOV 2018 Version: 1.0 Technical Specifications Parameter

Product Overview The AUP023N06 is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features a low drain-source on-resistance of 1.9m (typ.), enhanced body diode dv/dt capability, and superior avalanche ruggedness. This MOSFET is ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), as well as hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Product Attributes Brand: AUP Model:

Product Overview The ASA65R850E, ASU65R850, and ASD65R850E are N-Channel Silicon MOSFETs designed for high-efficiency power conversion applications. These devices offer a low drain-source on-resistance (RDS(on)) and are easy to control via gate switching. Key applications include boost PFC switches, single-ended flyback and two-transistor forward topologies, PC power supplies, PD adaptors, and LCD & PDP TVs and LED lighting. Product Attributes Brand: Not specified Origin: Not

N-Channel MOSFET Product Overview The ASA60R150E and ASW60R150E are Silicon N-Channel MOSFETs designed for high-efficiency power applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and are easy to control via the gate. They are ideal for use as Boost PFC switches and in various half-bridge and asymmetric half-bridge topologies. Applications include PC power supplies, adapters, LCD & PDP TVs, telecom power systems, UPS, LED lighting,

Product Overview The AUP045N12 and AUB045N12 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They feature low drain-source on-resistance (RDS(on) = 4.1m typ.), enhanced body diode dv/dt capability, and improved avalanche ruggedness. These MOSFETs are ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Product Attributes

Product Overview This series of N-Channel enhancement mode MOSFETs, including models ASW65R120EFD, ASA65R120EFD, ASR65R120EFD, and ASB65R120EFD, offers a low drain-source on-resistance (RDS(ON) = 0.105 typ.) and easy gate control. Designed for high-efficiency power conversion, these MOSFETs are suitable for applications such as Boost PFC switches, Half bridge, Asymmetric half bridge, Series resonance half bridge, and Full bridge topologies. Key application areas include

Product OverviewThe ARK Microelectronics DMS8515E/DMD8515E is an 850V N-Channel Depletion-Mode Power MOSFET designed for applications requiring high breakdown voltage and fast switching speeds. It features ESD improved capability, a proprietary advanced planar technology, and a rugged polysilicon gate cell structure. This device is suitable for use in audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators, and active loads.Product

Product Overview The ASDM40N40E is a 40V N-Channel MOSFET from Ascend Semiconductor Co., Ltd., designed for efficient power management applications. It features low on-resistance, fast switching speeds, and excellent package thermal dissipation, making it suitable for DC/DC converters and onboard power for servers, particularly in synchronous rectification applications. This MOSFET is 100% avalanche tested for reliability. Product Attributes Brand: Ascend Semiconductor Co.,

Product OverviewThe DMZ0622E/DMX0622E series of depletion mode Power MOSFETs from ARK Microelectronics are designed with proprietary ultrahigh threshold voltage technology. These devices are suitable for applications requiring stable power delivery and voltage clamping, such as Quick Charge (QC4.0) and Type C PD chargers. They can operate with wide input voltages up to 70V and provide a stable output voltage, protecting loads without the need for additional components like

Product Overview The ASM65R265E is a Silicon N-Channel MOS Power MOSFET designed for single-ended flyback or two-transistor forward topologies. It offers a low drain-source on-resistance of 230m (typ.) and is easy to control with a gate switching enhancement mode. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Product Attributes Brand: ASM Type: Silicon N-Channel MOS Mode: Enhancement mode Technical Specifications Parameter Symbol

Product Overview The ASDM4614S is a 40V N-Channel and P-Channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for surface mount applications, including PWM applications, load switching, and power management. This MOSFET offers robust performance with features like high current handling and efficient switching characteristics. Product Attributes Brand: Ascend Semiconductor Package: SOP-8 Lead Free: Yes Version: 1.0 Date:

Product OverviewThe FTS01N15G is a 150V N-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features ESD improved capability, a high-density cell design for extremely low RDS(ON), and a rugged polysilicon gate cell structure. This RoHS compliant and halogen-free available MOSFET is suitable for applications such as relay drivers, high-speed line drivers, and logic level translators.Product AttributesBrand: ARK Microelectronics Co., Ltd.Certifications:

Product OverviewThe FTZ50P01G5 is a 20V P-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features a proprietary advanced planar technology, a rugged polysilicon gate cell structure, and fast switching speed. This RoHS compliant and optionally halogen-free component is designed for high efficiency SMPS, adaptors/chargers, and active PFC applications.Product AttributesBrand: ARK Microelectronics Co., Ltd.Origin: Chengdu, ChinaCertifications: RoHS

Product Overview The Ascend Semiconductor ASDM3080KQ is a 30V N-CHANNEL MOSFET designed for efficient load switching and PWM applications. It features advanced trench technology, providing excellent RDS(ON) and low gate charge. This MOSFET offers robust performance with a continuous drain current of 80A at 25 and 50A at 100, making it suitable for demanding industrial uses. Product Attributes Brand: Ascend Semiconductor Model: ASDM3080KQ Technology: Advanced Trench Technology

Product Overview The ASA65R550E, ASU65R550E, and ASD65R550E are N-Channel MOSFET transistors designed for high-efficiency power conversion applications. These devices are optimized for Boost PFC topologies, power adapters, LCD & PD applications, and LED lighting. Key features include low drain-source on-resistance, easy gate control, and enhanced switching performance, making them suitable for flyback or two-ended flyback converters. Product Attributes Brand: Not specified

Product Overview The Ascend Semiconductor ASDM60N50KQ is a 60V N-Channel MOSFET designed for high-performance applications. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for power management solutions. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and efficiency in demanding environments. Its robust design and excellent electrical characteristics make it suitable for various industrial

Product Overview This series of N-Channel enhancement mode MOSFETs, including models ASW65R120EFD, ASA65R120EFD, ASR65R120EFD, and ASB65R120EFD, are designed for high-performance power applications. They feature low drain-source on-resistance (RDS(ON) = 0.105 typ.) and easy gate control, making them suitable for demanding switching applications. Key applications include Boost PFC switches, half bridge, asymmetric half bridge, series resonance half bridge, and full bridge

Product Overview The ASDM30N90Q is a 30V N-Channel MOSFET featuring advanced trench technology and low gate charge. It offers excellent RDS(ON) and high power and current handling capabilities, making it suitable for load switch, PWM applications, and power management scenarios. This MOSFET provides a low gate charge and is designed for efficient power conversion. Product Attributes Brand: Ascend Semiconductor Co.,Ltd Product Line: ASDM Technology: Advanced Trench Technology

Product OverviewThe Analog Power AMA460N is an N-Channel 60-V MOSFET featuring low rDS(on) trench technology, low thermal impedance, and fast switching speed. It is suitable for DC/DC conversion circuits and motor drives.Product AttributesBrand: Analog PowerModel: AMA460NType: N-Channel MOSFETOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source VoltageVDS60V