Single FETs, MOSFETs

Product Overview The ASA65R220E and ASB65R220E are N-Channel Silicon MOSFETs designed for power switching applications. They offer a low drain-source on-resistance and easy gate control, making them suitable for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge. These MOSFETs are ideal for PC power supplies, adapters, LCD & PDP TVs, LED lighting, server power

MOSFET Silicon N-Channel Product Overview The ASW65R046EFD, ASQ65R046EFD, and ASR65R046EFD are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 39m typ.) and are easy to control for gate switching. They are ideal for single-ended flyback or two-transistor forward topologies, finding application in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Product

Product Overview The AUD069N10A is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features low drain-source on-resistance, enhanced body diode dv/dt capability, and improved avalanche ruggedness. This MOSFET is ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Product Attributes Brand: Not specified Origin: Not

Product Overview The ASA50R130E and ASW50R130E are N-Channel Silicon MOSFETs designed for applications in single-ended flyback or two-transistor forward topologies. They are suitable for use in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Key features include low drain-source on-resistance (RDS(ON) = 0.113 typ.), easy gate switching control, and enhancement mode operation with a threshold voltage (Vth) of 2.5 to 3.5 V. These MOSFETs offer high performance

Product Overview The AUB040N10 and AUP042N10 are N-Channel Silicon MOSFETs designed for high-performance applications. They are ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters within the telecommunications and industrial sectors. Key features include low drain-source on-resistance, high-speed power switching capabilities, an enhanced body diode with dv/dt capability, and improved avalanche ruggedness.

Product Overview The ASA60R170E is a Silicon N-Channel MOS field-effect transistor designed for high-efficiency power switching applications. It features a low drain-source on-resistance (RDS(ON) = 0.139 typ.) and is easy to control due to its enhancement mode gate switching. This MOSFET is suitable for various power supply topologies including Boost PFC, single-ended flyback, and two-transistor forward, as well as HB, AHB, and LLC topologies. It finds application in PC power

AUA/AUB/AUP/AUN/AUD062N08 - N-Channel Power MOSFET The AUA/AUB/AUP/AUN/AUD062N08 series are N-Channel Power MOSFETs designed for synchronous rectification and hard switching applications. These devices are suitable for high-speed circuits, telecom applications, and industrial SMPS. Key features include low drain-source on-resistance, high switching speed, enhanced body diode, and ruggedness against dv/dt. Product Attributes Brand: AU (implied by part numbering and package

Product Overview The ASA60R090EFDA and ASW60R090EFDA are N-Channel Silicon MOSFETs designed for soft switching applications. They are ideal for use as Boost PFC switches and in Half bridge, Asymmetric half bridge, Series resonance half bridge, and Full bridge topologies, including phase-shift-bridge (ZVS) and LLC configurations. These MOSFETs are well-suited for power supplies in Application Servers, Telecom, EV Charging, and Solar Inverters, offering low drain-source on

Product Overview The AUN036N10, AUP039N10, AUA039N10, and AUB039N10 are N-Channel Silicon MOSFETs designed for efficient power management applications. These enhancement-mode devices feature low drain-source on-resistance and are easy to control, making them ideal for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting solutions. Product Attributes Brand: Not specified Origin: Not

Product Overview The ASA60R150E and ASW60R150E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. Featuring low drain-source on-resistance (RDS(on)) and easy gate control, these enhancement-mode devices are ideal for use as Boost PFC switches, single-ended flyback converters, and in half-bridge or asymmetric half-bridge topologies. They are well-suited for a wide range of applications including PC power supplies, adapters, LCD & PDP TVs, telecom

Product Overview The ASA70R600E, ASU70R600, and ASD70R600E are N-Channel Silicon MOSFETs designed for power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. Key applications include PD adaptors, LCD & PDP TVs, and LED lighting. Product Attributes Brand: Not specified Origin: Not specified Material: Silicon Type: N

Product Overview The ASD65R270E and ASA65R270E are N-Channel Silicon MOSFETs designed for single-ended flyback or two-transistor forward topologies. These enhancement-mode MOSFETs are easy to control and feature low drain-source on-resistance. They are suitable for applications such as PC power supplies, power adapters, LCD & PDP TVs, and LED lighting. Product Attributes Brand: Not specified Origin: Not specified Material: Silicon Color: Not specified Certifications: Not

Product Overview The AUD034N04LA is a Silicon N-Channel MOSFET designed for automotive applications. It is suitable for single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Key features include low drain-source on-resistance (RDS(ON) = 2.9m typ.), easy gate switching control, enhancement mode operation with a gate threshold voltage (Vth) of 1 to 2.3 V, and a high operating temperature of

Product Overview The AP90N02NF is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is specifically designed for battery protection and other switching applications, providing reliable performance in demanding environments. Product Attributes Brand: APM Microelectronics Product ID: AP90N02NF Technology: Advanced Trench Technology Mode:

Product Overview The SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. BSS138 is an N-Channel MOSFET in a SOT-23 plastic-encapsulated package. It features a high-density cell design for extremely low RDS(on) and a rugged, reliable construction. This MOSFET is designed for direct logic-level interface with TTL/CMOS and is suitable for driving relays, solenoids, lamps, hammers, displays, memories, and transistors. It is also ideal for battery-operated systems and solid-state

Product Overview The AP40P04D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching applications. Product Attributes Brand: APM Microelectronics Product ID: AP40P04D Technology: Advanced Trench Technology Mode: P-Channel Enhancement Mode Origin: (Yongyuan Microelectronics

Product Overview The AO3415 is a P-Channel MOSFET from Shenzhen Long Jing Micro-Electronics Co., Ltd., designed with advanced trench technology. It offers excellent low on-resistance (RDS(ON)) and low gate charge, with operation possible at gate voltages as low as 1.8V. This device is ESD protected and suitable for applications such as load switches and PWM applications. Product Attributes Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. Product Type: P-Channel MOSFET

Product Overview The 2N7002K is an N-Channel MOSFET from Shenzhen Long Jing Micro-Electronics Co., Ltd., designed with a high-density cell structure for low RDS (ON) and serves as a voltage-controlled small signal switch. It is rugged, reliable, and offers high saturation current capability. This MOSFET is ESD protected up to 2KV and is suitable for various applications requiring efficient switching and low on-resistance. The device is encapsulated in a SOT-23 plastic package

Product Overview The AP120N06P/T is an N-Channel Enhancement Mode MOSFET from APM Microelectronics, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, suitable for operation with gate voltages as low as 10V. This device is designed for battery protection and other switching applications, providing high continuous drain current and low on-resistance. Product Attributes Brand: APM Microelectronics () Technology: Advanced Trench Technology

Product Overview The APJ14N65D is a 650V N-Channel Enhancement Mode MOSFET from the CoolFET II family, engineered with charge balance technology to deliver extremely low on-resistance and low gate charge performance. This MOSFET is ideal for applications demanding superior power density and outstanding efficiency, such as Uninterruptible Power Supplies (UPS) and Power Factor Correction (PFC) circuits. Product Attributes Brand: APM Microelectronics () Product Family: CoolFET