Single FETs, MOSFETs
N Channel MOSFET with Low RDS on MCC SI3134KL3 TP UL 94 V0 Flammability Rating and RoHS Compliance
Product Overview The SI3134KL3 is an N-Channel MOSFET designed for low logic level gate drive applications. It features a low RDS(on) as an N-Channel switch and meets UL 94 V-0 flammability rating. This component is Moisture Sensitivity Level 1 and is Halogen Free available upon request. It is lead...
Power MOSFET Minos IRF3205S suitable for uninterruptible power supplies and high frequency switching
Product OverviewThe IRF3205S is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power ...
Power MOSFET MaxLinear XR46000ESETR featuring fast switching and improved ESD capability for LED lighting drivers
Product OverviewThe XR46000 is a silicon N-channel enhanced power MOSFET designed for various power supply systems, particularly for AC step driving applications in LED lighting. It offers low conduction loss, good switching performance, and high avalanche energy, making it suitable for LED lighting ...
High Current Minos MD20N50H Power MOSFET with 80A Pulsed Drain Current and 30V Gate to Source Voltage
Product OverviewThe MD20N50H is a silicon N-Channel Enhanced Power MOSFET utilizing advanced technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. It is suitable for high-frequency switching mode power supplies (SMPS) and general-purpose applications...
MCC MCAC150N03A TP MOSFET with Trench Power MV Technology and low RDS ON in compact DFN5060 package
Product Overview The MCAC150N03A is an N-Channel MOSFET featuring Trench Power MV MOSFET Technology and a high-density cell design for low RDS(ON). It offers excellent heat dissipation due to its DFN5060 package. This device is Moisture Sensitivity Level 1, Halogen Free ("Green" Device), and meets ...
Depletion mode transistor MICROCHIP DN3525N8-G with low input capacitance and fast switching speeds
DN3525 N-Channel Depletion-Mode Vertical DMOS FET The DN3525 is a low-threshold, normally-on depletion-mode transistor featuring an advanced vertical DMOS structure. It offers high input impedance, low input capacitance, fast switching speeds, and low on-resistance, combined with the power handling ...
Low on resistance MEM2302XG transistor designed for battery management and power conversion systems
The MEM2302X is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. It is particularly suited for low voltage applications and low power dissipation in a very small outline surface mount package (SOT23). Key ...
P Channel Enhancement Mode Field Effect Transistor MCC SI3415 TP for Load Switching and PWM Applications
Product Overview The SI3415 is a P-Channel Enhancement Mode Field Effect Transistor designed for load switching and PWM applications. It features excellent RDS(ON) and low gate charge, operating with low gate voltages. This transistor is RoHS compliant, lead-free, and meets UL 94 V-0 flammability ...
Power Switching Silicon N Channel MOSFET Minos MPG100N06 Featuring Low RDS ON and High ESD Capability
Product DescriptionThe MPG100N06 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high-frequency circuits, and uninterruptible ...
Silicon N Channel Power MOSFET Minos MPF3N150 with Low On Resistance and High Voltage Rating
Product OverviewThe MPF3N150 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapters/chargers, offering low ON resistance and low reverse transfer capacitances...
Low threshold P Channel Vertical DMOS FET MICROCHIP VP3203N8-G suitable for switching applications
Product OverviewThe Supertex VP3203 is a low threshold, P-Channel, enhancement-mode (normally-off) Vertical DMOS FET. It utilizes Supertexs silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS ...
Durable MOSFET transistor MATSUKI ME2N7002E designed for low voltage and low current switching needs
Product OverviewThe ME2N7002E is an N-Channel enhancement mode field-effect transistor utilizing high cell density DMOS technology. It is designed for low on-state resistance, providing rugged, reliable, and fast switching performance. This transistor is suitable for applications requiring up to ...
Silicon N channel MOSFET transistor Minos MPF50N25 with 250V drain to source voltage and 50A current
Product OverviewMPF50N25 is a silicon N-channel Enhanced MOSFET utilizing advanced MOSFET technology to minimize conduction loss, improve switching performance, and enhance avalanche energy. This transistor is ideal for SMPS, high-speed switching, and general-purpose applications.Product AttributesB...
Power MOSFET Miracle Power MPF06N90 with High Breakdown Voltage and Low Reverse Transfer Capacitance
Product Overview The MPF06N90 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a high breakdown voltage of 900V and a continuous drain current of 6A at 25C. This MOSFET offers low ON resistance (Typ. 1.95 @ VGS = ...
N Channel MOSFET MIRACLE POWER MS0003Y with 4.5 Milliohm On Resistance and 100V Drain Source Voltage
Product Overview The MS0003Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device offers a 100V drain-source voltage and a continuous drain current of 103A at 25C, with a low on-resistance of 4.5m (typ.) at VGS = 10V. It is designed for high-frequency switching and ...
ME6968ED Dual N Channel Power MOSFET with Maximum DC Current Capability and Low On State Resistance
Product OverviewThe ME6968ED Dual N-Channel logic enhancement mode power field effect transistors utilize high cell density, DMOS trench technology, optimized for minimal on-state resistance. These devices are ideal for low-voltage applications such as power management in cellular phones, notebook ...
High Breakdown Voltage N Channel Vertical DMOS FET MICROCHIP TN5325K1-G with Silicon Gate Technology
Product OverviewThe TN5325 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET utilizing a vertical DMOS structure and silicon gate manufacturing. It offers the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This ...
Power MOSFET MIRACLE POWER MPF13N65 650V 13A Continuous Drain Current Low On Resistance for E Bike Charger Designs
Product Overview The MPF13N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V breakdown voltage, a continuous drain current of 13A, and a low on-resistance of 0.60 (typ.) at VGS = 10V. This MOSFET is characterized by low ...
N channel power mosfet MEM4N60A3G with 600 volt drain source voltage and fast switching capabilities
MEM4N60 N-CHANNEL POWER MOSFET The MEM4N60 is a high-voltage, high-speed N-channel Power MOSFET designed for switching regulator and general switching applications. It offers features such as low CRSS and fast switching capabilities. Product Attributes Brand: Microne Origin: www.microne.com.cn ...
Super Junction MOSFET Minos MLS60R380D for High Speed Switching and General Purpose Power Electronics
Product OverviewThe MLS60R380D is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design minimizes conduction losses and enhances switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose application...
