Single FETs, MOSFETs
Dual N P Channel Enhancement Mode HXY MOSFET FDS4559 HXY with Low Gate Charge and 60V Voltage Rating
FDS4559-HXY Dual N+P-Channel Enhancement Mode MOSFET The FDS4559-HXY utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This dual N+P-Channel MOSFET is suitable for battery protection and various switching ...
High Speed Switching Huixin H15N10D Single N Channel MOSFET Suitable for Motor Control and UPS Systems
Product OverviewThe H15N10D is a single N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, ...
Battery Protection P Channel MOSFET HXY MOSFET AOD403 HXY with Low Gate Charge and Trench Technology
Product OverviewThe AOD403-HXY is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications...
Durable Huixin H10N65F 650V N Channel MOSFET designed for power conversion in SMPS and charger units
Product OverviewThe H10N65F is a 650V N-Channel MOSFET designed for high-efficiency power applications. It features fast switching speeds, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS), adapters, ...
HXY MOSFET BSC097N06NS HXY N Channel MOSFET with Excellent Switching Performance and Low Gate Charge
Product OverviewThe BSC097N06NS is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBra...
Low Gate Charge and Low RDS ON N Channel MOSFET HXY MOSFET SI1032R T1 GE3 HXY for Switching Circuits
Product OverviewThe SI1032R-T1-GE3 is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It features advanced trench technology, offering excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery ...
N Channel Power MOSFET Huixin H15N65D Featuring Low Conduction Losses and Ultra Low Gate Charge for Switching
Product OverviewThe H15N65D is an N-Channel Super Junction Power MOSFET featuring new technology for high voltage devices. It offers low on-resistance, low conduction losses, and a small package with ultra-low gate charge for reduced driving requirements. This device is 100% avalanche tested and ...
Power Switching Device HXY MOSFET IRFR024NT N Channel Enhancement Mode with Low Gate Charge and RDS
Product OverviewThe IRFR024NT is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications.Product Attributes...
RU20P7C P Channel Power MOSFET Featuring Low On Resistance and Lead Free RoHS Compliant Package
Product Overview The RU20P7C is a P-Channel Advanced Power MOSFET designed for efficient load switching and power management applications. It features a super high-density cell design, offering low On-Resistance of 20m (Typ.) at VGS=-4.5V and 30m (Typ.) at VGS=-2.5V. This MOSFET is reliable, rugged, ...
Low Gate Voltage P Channel MOSFET HXY MOSFET IRFR5305TRPBF HXY for Switching and Battery Protection
Product OverviewThe IRFR5305TRPBF is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other ...
High Saturation Current N Channel Enhancement Mode Transistor Huixin MMBT7002 for Switching Circuits
Product OverviewThe MMBT7002 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON) and high saturation current capability. It is suitable for voltage-controlled small signal switching and high-speed switching applications.Product ...
high frequency switching transistor Jilin Sino Microelectronics JS65R170FM with avalanche tested
Product OverviewThe JS65R170M is a N-channel enhancement mode field-effect transistor designed for high-frequency switching applications. It features low gate charge, low Crss, fast switching speed, and improved dv/dt capability. The product is 100% avalanche tested and RoHS compliant. Applications ...
SiC MOSFET HXY MOSFET HC3M0045065D Featuring Separate Driver Source Pin and Optimized Package Design
SiC Power MOSFET N-Channel Enhancement Mode The HUAXUANYANG HXY HC3M0045065D is a 3rd generation SiC Power MOSFET featuring an N-Channel Enhancement Mode design. It utilizes optimized package with a separate driver source pin for enhanced performance. This MOSFET offers high blocking voltage with ...
Jilin Sino Microelectronics JCS2N60VC IPAK MOSFET ideal for switch mode power supplies and lighting
Product OverviewThe JCS2N60C is a high-performance N-channel MOSFET designed for high efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss (typical 3.1pF), fast switching speed, 100% avalanche tested, and improved dv/dt ...
P Channel Enhancement Mode MOSFET HUAYI HY12P03S with High Junction Temperature and Avalanche Rating
HOOYI HY12P03S P-Channel Enhancement Mode MOSFET The HOOYI HY12P03S is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers a reliable and rugged solution with features such as low on-state resistance and avalanche rating. ...
Low Gate Charge and Excellent RDS ON HXY MOSFET IRLZ44NPBF HXY N Channel Enhancement Mode Transistor
Product OverviewThe IRLZ44NPBF is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for high-efficiency switch-mode power supplies and power factor ...
switching component HXY MOSFET 5N10-HXY N Channel transistor with low gate charge and 100 volt rating
Product OverviewThe 5N10-HXY N-Channel MOSFET utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ...
High Current MOSFET HUAYI HYG032N08NS1B Featuring Low On Resistance and Avalanche Tested Reliability
Product OverviewThe HYG032N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features a high continuous drain current of 180A and a low on-state resistance of 3 m (typ.) at VGS = 10V. This MOSFET is 100% ...
Fast switching MOSFET Jilin Sino Microelectronics JCS50N20WT with TO 247 package and low gate charge
Product OverviewThe JCS50N20T is a high-performance N-channel MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speeds, 100% avalanche tested, and improved dv/dt capability. This RoHS...
High Current MOSFET HXY MOSFET IRFP450-HXY with Low RDS ON and Gate Voltage Operation from 4.5 Volts
Product DescriptionThe IRFP450 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible using gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications...
