Single FETs, MOSFETs
Single P Channel Enhancement Mode MOSFET HUAYI HYG350P13NA1B for Power Applications and Networking
Product OverviewThe HYG350P13NA1B is a single P-Channel Enhancement Mode MOSFET designed for various power applications. It features a low on-resistance of 35m (typ.) at VGS = -10V, 100% avalanche testing for reliability, and a rugged construction. This device is available in lead-free and green ...
HXY MOSFET SI2333CDS HXY P Channel Enhancement Mode MOSFET ideal for uninterruptible power supplies
SI2333CDS P-Channel Enhancement Mode MOSFETThe SI2333CDS is a P-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications, offering advantages like low on-resistance for efficient power handling. Its applications ...
switching N channel MOSFET Jilin Sino Microelectronics JCS6N70RC DPAK designed for power electronics
Product DescriptionThe JCS6N70C is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, low Crss (typical 14pF), and fast switching speeds. The device is 100% avalanche tested and offers improved dv/dt capability...
Low on resistance N channel MOSFET HUAYI HY3306P ideal for battery powered and portable applications
Product Overview The HY10N30 is a N-channel enhancement mode MOSFET featuring advanced trench technology for low on-resistance. It is avalanche tested, reliable, and rugged, with lead-free and RoHS compliant options available. This MOSFET is suitable for portable equipment and battery-powered ...
Power Management N Channel Enhancement Mode MOSFET HUAYI HY1606D with Low RDS ON and Avalanche Rating
Product OverviewThe HY1606D/U/V is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers reliable and rugged performance with features like avalanche rating and low RDS(ON). Lead-free and green devices are available, compliant with RoHS standards.Product ...
Silicon Carbide N-Channel MOSFET HXY MOSFET DIW065SIC015-HXY with low On-Resistance and high voltage capability
SiC Power MOSFET N-Channel Enhancement Mode The HUAXUANYANG HXY SiC Power MOSFET is an N-Channel Enhancement Mode device designed for high-performance applications. Leveraging Wide bandgap SiC MOSFET technology, it offers low On-Resistance with high blocking voltage, low capacitances for high-speed ...
Jilin Sino Microelectronics JCS10N65ST S AR N channel FET for high frequency switching and UPS systems
Product OverviewThe JCS10N65T is a N-channel enhancement mode field-effect transistor designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss (typical 20pF), fast switching speed, 100% avalanche tested, improved dv/dt ...
RoHS Compliant HUAYI HYG090N06LS1C2 N Channel MOSFET Designed for High Frequency Point of Load Converters
Product OverviewThe HYG090N06LS1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features low on-resistance (RDS(ON)= 7.7 m typ. @VGS = 10V, 11.8 m typ. @VGS = 4.5V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and ...
Power Management MOSFET HYG080ND03LA1S Dual N Channel 30V 11A Halogen Free RoHS Compliant Component
Product OverviewThe HYG080ND03LA1S is a Dual N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It offers low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested for reliability, and is available in Halogen Free and Green (RoHS ...
High Voltage SiC MOSFET HXY MOSFET HC3M0015065D N Channel Enhancement Mode for Power Applications
Product OverviewThe HC3M0015065D is a 3rd Generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD, designed for high-efficiency power applications. This N-Channel Enhancement Mode MOSFET offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a ...
Low On Resistance N Channel MOSFET Model HYG024N03LR1C2 Suitable for Battery Protection Circuits
Product OverviewThe HYG024N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, ensuring ...
HUAYI HYG006N04LS1B6 Single N Channel MOSFET with Avalanche Tested Reliability and Low On Resistance
Product OverviewThe HYG006N04LS1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-resistance of 0.55m (typ.) at VGS = 10V and 0.72m (typ.) at VGS = 4.5V, with a high continuous drain current of 530A. This MOSFET is 100% ...
HXY MOSFET Si7850DP HXY N Channel Enhancement Mode with Gate Voltage Operation Starting at 4.5 Volts
Product DescriptionThe Si7850DP-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching ...
Power MOSFET HUAYI HYG023N04LS1B N Channel Enhancement Mode Device with Avalanche Tested Reliability
Product OverviewThe HYG023N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for power management applications. It features a low on-resistance (RDS(ON)) of 2.1 m typ. at VGS = 10V and 2.9 m typ. at VGS = 4.5V, with a continuous drain current of 170A. This device is 100% ...
N Channel Enhancement Mode MOSFET HUAYI HYG055N08NS1B with 80V 120A Low On State Resistance
Product OverviewThe HYG055N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a robust and reliable performance with key advantages such as low on-state resistance (RDS(ON)=5.3 m typ. @ VGS = 10V), ...
HXY MOSFET AOD409 HXY P Channel Enhancement Mode Device Designed for Low Gate Charge and High Current
Product OverviewThe AOD409 is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching ...
N Channel Enhancement Mode MOSFET HUAYI HY4504B Ideal for DC DC Converter and Switching Applications
Product OverviewThe HY4504P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-resistance, high current capability, and a reliable, rugged design. Lead-Free and Green devices are available, ...
N Channel Enhancement Mode HXY MOSFET SI2308 Suitable for Battery Protection Load Switching Applications
Product OverviewThe SI2308 is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. Utilizing advanced trench technology, this device offers excellent RDS(ON) and is suitable for applications such as battery protection and load switching, including PWM applications and uninterruptible ...
Lead Free High Current MOSFET HUAYI HY3312B with 125 Volt Voltage Rating and Low On State Resistance
Product OverviewThe HY3312 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous drain current of 130A, featuring a low on-state resistance of 7.7 m (typ.) at VGS...
HXY MOSFET SI2301 ZE P Channel Enhancement Mode Transistor in SOT 23 Package for PWM and Load Switch
Product OverviewThe SI2301-ZE is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 1.8V. This MOSFET is ideal for PWM applications and serves as an effective load switch.Product ...
