Single FETs, MOSFETs
N Channel MOSFET HUAYI HYG020N04NR1P Featuring Low RDS ON 1.9 Milliohms and 40V 220A Specifications
Product OverviewThe HYG020N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a 40V/220A rating and a low RDS(ON) of 1.9 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green ...
N Channel Power MOSFET HUAYI HYG050N13NS1B 135V 200A Drain Current Low On Resistance Suitable for UPS
Product OverviewThe HYG050N13NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 135V and a continuous drain current of 200A, with a low on-resistance of 4.0m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, ...
Silicon Carbide MOSFET HXY MOSFET HC3M0045065K1 with Fast Intrinsic Diode and Minimized Gate Ringing
Product OverviewThe HC3M0045065K1 is a 3rd generation SiC MOSFET from HUAXUANYANG HXY ELECTRONICS CO.,LTD, featuring an optimized package with a separate driver source pin. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode ...
Low Gate Voltage Operation HXY MOSFET IRLR8726T N Channel Enhancement Mode MOSFET with Excellent RDS
Product OverviewThe IRLR8726T is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product ...
Low Gate Charge N Channel MOSFET HUAYI HY1603D Designed for High Frequency Isolated DC DC Converters
Product OverviewThe HOOYI HY1603D/U/S is a N-Channel Enhancement Mode MOSFET featuring super low gate charge, advanced high cell density Trench technology, and excellent CdV/dt effect decline. It offers 100% EAS guaranteed and is available in a Halogen-Free device. This MOSFET is ideal for high...
Single N Channel Enhancement Mode MOSFET HUAYI HY1920B 200V 72A Low On Resistance Device
Product OverviewThe HY1920B is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a high breakdown voltage of 200V and a continuous drain current of 72A, with a low on-state resistance of 22m (typ.) ...
N Channel Enhancement Mode MOSFET HUAYI HY3704B with 120 Amp Continuous Drain Current at 100 Celsius
Product OverviewThe HY3704P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested, ensuring ...
Avalanche Tested HUAYI HYG011N04LS1TA N Channel MOSFET 40V 320A for Switching and Battery Management
Product OverviewThe HYG011N04LS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a low on-state resistance of 0.9 m (typ.) at VGS = 10V and 1.3 m (typ.) at VGS = 4.5V. This device is 100% ...
100 volt 160 amp n channel enhancement mode mosfet HUAYI HYG042N10NS1P with rugged design and testing
HYG042N10NS1/B N-Channel Enhancement Mode MOSFETThe HYG042N10NS1/B is a 100V/160A N-Channel Enhancement Mode MOSFET designed for power switching applications and DC-DC converters. It features low on-resistance (RDS(ON)=3.5m typ. @ VGS = 10V), 100% avalanche testing, and a reliable, rugged design. ...
High Current MOSFET HUAYI HYG065N07NS1C2 N Channel 70 Volt 70 Ampere Rating for Switching and Power Management
Product OverviewThe PDFN5*6 HYG065N07NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low on-resistance of 5.3 m (typ.) at VGS = 10V, 70V/70A rating, and is 100% avalanche ...
N Channel Enhancement Mode MOSFET HUAYI HY4004B Suitable for DC DC Converters and Power Management
Product OverviewThe HY4004P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers reliable and rugged performance with a low on-state resistance and is available in lead-free and green (RoHS compliant) options. This device ...
N Channel Enhancement Mode MOSFET HUAYI HYG026N03LS1C2 with RoHS Compliant Green Device Certification
HYG026N03LS1C2 - N-Channel Enhancement Mode MOSFET The HYG026N03LS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for various switching applications. It features low on-resistance, 100% avalanche tested, and is available in Halogen Free and Green (RoHS Compliant) options. Ideal ...
Electronic device HUAYI HY1920P halogen free lead free designed for RoHS and IPC J STD 020 compliance
Product OverviewHUAYI offers lead-free and halogen-free products that are fully compliant with RoHS and meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020 for MSL classification. The term "Green" signifies lead-free (RoHS compliant) and halogen-free (Br or Cl does not exceed 900ppm by ...
Low RDS ON P Channel MOSFET HUAYI HYG260P03LR1S Designed for Battery Protection and Power Switching
Product OverviewThe HYG260P03LR1S is a P-Channel Enhancement Mode MOSFET designed for power management and switching applications. It features a low RDS(ON) of 21.6m (typ.) at VGS = -10V and 42m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen ...
Switching Huixin H40N25 N Channel Power MOSFET with Low Gate Charge and High Power Dissipation Rating
Product OverviewThe H40N25 is an N-Channel Power MOSFET featuring advanced high cell density Trench technology, super low gate charge, and excellent Cdv/dt effect decline. It is designed for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switch ...
Power MOSFET HUAYI HYG009N04LS1C2 designed for switching and power management in electronic circuits
Product OverviewThe HYG009N04LS1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in DC/DC converters. It features low on-state resistance (RDS(ON) = 0.75m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. ...
Avalanche Tested N Channel Enhancement Mode MOSFET HUAYI HYG014N03LR1P Suitable for Inverter Systems
HYG014N03LR1P/B N-Channel Enhancement Mode MOSFET The HYG014N03LR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It features low on-resistance (RDS(ON) = 1.3m typical at VGS = 10V and 1.6m typical at VGS = 4.5V), 100% avalanche tested, and a reliable...
Low On Resistance P Channel MOSFET HUAYI HYG110P04LQ2C2 Suitable for DC DC Converter Power Management
Product OverviewThe HYG110P04LQ2C2 is a single P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 9.0 m (typ.) at VGS = -10V and 13.0 m (typ.) at VGS = -4.5V, 100% avalanche tested, and a reliable, rugged ...
SiC Power MOSFET with low capacitance and fast switching characteristics HXY MOSFET NTH4L027N65S3F HXY
Product OverviewThe NTH4L027N65S3F is a 3rd generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS, featuring an N-Channel Enhancement Mode design. It is optimized with a separate driver source pin for improved performance, offering high blocking voltage with low on-resistance, and high-speed ...
Fast Switching N Channel MOSFET HSU150N03 with High Cell Density and Low Gate Charge Characteristics
Product Overview The HSU150N03 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements, is 100% EAS ...
