Single FETs, MOSFETs
HXY MOSFET BSC0702LS HXY N Channel MOSFET optimized for power supply and motor control applications
BSC0702LS N-SGT Enhancement Mode MOSFET The BSC0702LS is an N-Channel MOSFET utilizing advanced SGT technology, designed to deliver low RDS(ON), minimal gate charge, fast switching speeds, and excellent avalanche characteristics. This device offers enhanced ruggedness, making it suitable for various ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG027N04LR1D Suitable for Lithium Battery Protection Boards
Product OverviewThe HYG027N04LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers high performance with a low on-state resistance (RDS(ON)) of 2.6 m typ. at VGS = 10V and 3.1 m typ. at VGS = 4.5V...
1200V 100A SiC Power MOSFET HXY UF4C120070K4S-HXY N Channel Enhancement Mode for EV Battery Chargers
Product OverviewThe HUAXUANYANG UF4C120070K4S is a 3rd generation SiC Power MOSFET designed for high-efficiency power conversion. It features a 3rd generation SiC MOSFET technology, an optimized package with a separate driver source pin, high blocking voltage with low on-resistance, and high-speed ...
Switching MOSFET HUAYI HY4004P N Channel Enhancement Mode with 40V 208A and Low On State Resistance
Product OverviewThe HY4004P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a reliable and rugged performance with key features like 40V/208A capability and low on-state resistance (RDS(ON) = 2.5 m typ. @ VGS=10V). ...
Battery Protection MOSFET HYG015N03LR1P N Channel Enhancement Mode with Low RDS ON and Reliability
HYG015N03LR1/B N-Channel Enhancement Mode MOSFETThe HYG015N03LR1/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications and battery protection. It features low on-resistance (RDS(ON)) of 1.8m(typ.) at VGS=10V and 2.4m(typ.) at VGS=4.5V, 100% avalanche ...
Power MOSFET HUAYI HYG035N10NS2P N Channel Type with High Current Capability and Rugged Construction
Product OverviewThe HYG035N10NS2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a voltage rating of 100V and a continuous drain current of 180A. Key features include a low on-state resistance of 3.2m (typ.) at VGS = 10V, 100% ...
Power Switching MOSFET HUAYI HY1720W N Channel Enhancement Mode with Low RDS ON and High Reliability
HY1720W N-Channel Enhancement Mode MOSFETThe HY1720W is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages such as a low on-resistance (RDS(ON) of 27 m typ. at VGS = 10V), 100% avalanche tested, ...
Power MOSFET HXY MOSFET AOD2610E HXY N Channel Enhancement Mode with 60V Drain Source Voltage Rating
Product OverviewThe AOD2610E-HXY is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is ideally suited for ...
N channel MOSFET Jilin Sino Microelectronics JCS6N70VC IPAK for high frequency switching applications
Product OverviewThe JCS6N70C is an N-channel MOSFET designed for high-frequency switching applications. It features low gate charge, fast switching speeds, improved dv/dt capability, and is 100% avalanche tested. Ideal for use in high frequency switching mode power supplies, electronic ballasts, and ...
High Current Handling N Channel MOSFET HXY MOSFET AON7400A HXY with 25A continuous drain current rating
Product DescriptionThe AON7400A utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.Product AttributesBrand: HXY (Shenzhen ...
N Channel Enhancement Mode MOSFET HUAYI HYG023N04NR1B with Halogen Free and RoHS Compliant Features
Product OverviewThe HYG023N04NR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, particularly in Li-battery protection. It features a low on-state resistance (RDS(ON) of 2.2 m typ. @VGS = 10V), 45V/200A rating, 100% avalanche and DVDS tested, and a ...
High Current N Channel MOSFET HUAYI HY3403B Designed for Switching and Power Management Applications
Product OverviewThe HY3403P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers low on-resistance, high continuous drain current capability, and robust avalanche performance, making it suitable for demanding power ...
Power Switching MOSFET HUAYI HY3010P N Channel 100 Volt 100 Ampere Avalanche Tested
Product OverviewThe HY3010P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 100V/100A rating and a low on-state resistance of 10m (typ.) at VGS = 10V. Key features include 100% avalanche tested, reliability, and availability in ...
rugged mosfet transistor HUAYI HYG045P03LQ1D for power management dc dc converters motor control applications
Product DescriptionThis MOSFET is designed for channel enhancement mode applications, offering reliable and rugged performance. It is available in Halogen-Free and Green Devices, RoHS Compliant options. Applications include power management in DC-DC converters, load switching, and motor control...
Low On Resistance Power MOSFET HUAYI HY3210P N Channel Enhancement Mode with RoHS Compliant Materials
Product OverviewThe HY3210P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers reliable and rugged performance with low on-resistance and is available in lead-free and green (RoHS compliant) versions.Product ...
High Frequency Switching Jilin Sino-Microelectronics JCS6N70BC-262 N Channel MOSFET for Power Supplies
Product OverviewThe JCS6N70C is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, fast switching speeds, and improved dv/dt capability, with 100% avalanche testing for reliability. RoHS compliant.Product ...
High Power MOSFET HUAYI HY4008P N Channel Enhancement Mode with Robust Electrical Characteristics
Product OverviewThe HY4008P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and a robust, reliable design. Available in various lead-free and green device options, it ...
N Channel SiC Power MOSFET HXY MOSFET SCT3022ALHRC11-HXY with TO 247 Package and High Voltage Rating
SiC Power MOSFET N-Channel Enhancement ModeThe HUAXUANYANG HXY SiC Power MOSFET is a high-performance N-channel enhancement mode device utilizing Wide Bandgap SiC MOSFET technology. It offers reduced switching losses, increased system switching frequency, and higher power density, leading to reduced ...
Dual N P Channel Enhancement Mode HXY MOSFET AON3611 HXY with Low Gate Charge and Trench Technology
Product OverviewThe AON3611-HXY is a Dual N+P-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery ...
High voltage 500V MOSFET Huixin H13N50F designed for switching power supplies and adapter applications
Product OverviewThe H13N50F is a 500V N-Channel MOSFET designed for high-efficiency switching applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is ideal for use in Switch Mode Power Supplies ...
