Single FETs, MOSFETs

Product OverviewThe MDES08N019RH is a single N-channel Trench MOSFET from Magnachip Semiconductor Ltd., utilizing advanced MV MOSFET Technology. It offers high performance with excellent on-state resistance and fast switching capabilities. This MOSFET is suitable for motor drive and general-purpose applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Certifications: RoHS, Halogen FreeTechnical SpecificationsCharacteristicsSymbolRatingUnitTest ConditionMin.Typ.Max

Product OverviewThe ME80N75F is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design significantly minimizes on-state resistance, offering exceptionally low RDS(ON) and maximum DC current capability. It is ideal for power management, DC/DC converters, and load switch applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Pb

Product Overview The MCG50N03 is an N-CHANNEL MOSFET featuring Trench Power LV MOSFET Technology. It offers an excellent package for heat dissipation and a high-density cell design for low RDS(on). This MOSFET is designed for applications requiring high efficiency and reliability, with its epoxy meeting UL 94 V-0 flammability rating and being Moisture Sensitivity Level 1 compliant. It is available as Lead Free Finish/RoHS Compliant, with a Halogen Free option available upon

Product OverviewThe MGX40N120N is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-performance power electronics applications. It offers a high blocking voltage with low on-resistance, high-speed switching capabilities due to low capacitances, and a fast, robust intrinsic body diode. The optimized package includes a separate driver source pin, making it easy to parallel for increased current handling. This MOSFET is ideal for use in Switch Mode Power Supplies,

Product Overview The LP1488WT1G is a P-Channel Power MOSFET designed for power management applications. It is suitable for use in notebooks, portable equipment, battery-powered systems, load switches, and DSCs. This device complies with RoHS requirements and is Halogen Free. Product Attributes Brand: Leshan Radio Company, LTD. Material Compliance: RoHS, Halogen Free Device Type: P-Channel Power MOSFET Package Type: SC70 (SOT-323) Technical Specifications Parameter Symbol Min.

Product OverviewThe MDD50N03D is a 30V N-Channel Enhancement Mode MOSFET featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation, a high-density cell design for low RDS(ON), and is Halogen Free. This MOSFET is suitable for high current load applications, load switching, hard switched, and high frequency circuits, as well as uninterruptible power supplies.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not

Product OverviewThe ME7232S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits requiring low power loss in a very small outline surface mount package. Its key features include extremely low RDS(ON) through super

Product OverviewThe MS130N20JDC0/T0 H1.01 Maspower is a high-efficiency N-channel MOSFET designed for power switching applications. It features low gate charge, low Crss, and fast switching speeds, making it suitable for high efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and UPS systems. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring robust performance in demanding environments. It is also RoHS

Product OverviewThe MS2N300HGC0 H1.02 is a high-performance Maspower MOSFET designed for high-voltage switching applications. It features 100% avalanche tested, fast intrinsic diode, minimized gate charge, very low intrinsic capacitances, and high-speed switching capabilities. Ideal for High Voltage Power Supplies, PV Inverters, and general switching applications.Product AttributesBrand: MaspowerModel: MS2N300HGC0 H1.02Technical SpecificationsParameterSymbolTest conditionsMin

Product OverviewThe M2M-0080-120K is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET designed for high-performance power applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its avalanche ruggedness contributes to system reliability. This MOSFET is halogen-free and RoHS compliant, leading to higher system efficiency, reduced cooling requirements, increased power

Product Overview The MDD2301 is a -20V P-Channel Enhancement Mode MOSFET designed for load switching and DC/DC converter applications in portable devices. It features low RDS(on) performance and is housed in a SOT-23 package. Product Attributes Brand: Microdiode Electronics (Shenzhen) Package: SOT-23 Technical Specifications Parameter Symbol Condition Min Typ Max Unit Absolute Maximum Ratings VDS (TA=25unless otherwise noted) -20 V VGS 12 V ID -3.8 A Power Dissipation PD

Product OverviewThe MS220N10JDT0(P0) H1.01 Maspower is a high-performance power MOSFET designed for demanding applications. It features low RDS(on), fast switching speeds, and 100% avalanche tested for reliability. Its low package inductance and low intrinsic rectifier contribute to efficient operation. This device is suitable for a wide range of power electronics applications including DC-DC converters, battery chargers, switched-mode power supplies, AC motor drives, and

Product Overview This document details the LN4812LT1G and S-LN4812LT1G, 30V N-Channel Enhancement-Mode MOSFETs from Leshan Radio Company, LTD. These MOSFETs feature high density cell design for ultra low on-resistance, advanced trench process technology, and high power and current handling capability. The S-prefix variants are designed for automotive and other applications requiring unique site and control change requirements, are AEC-Q101 qualified, and PPAP capable. They

Product Overview The S-LNB2306ELT1G is an N-Channel 30V (D-S) MOSFET featuring ESD protection. It is designed with a super high density cell structure for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for power management in notebooks, portable equipment, and load switches. The material of the product complies with RoHS requirements and is Halogen Free. The S- prefix indicates suitability for automotive and

Product OverviewThe ME4548 is an N+P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low power loss in a compact surface-mount package.Product AttributesBrand: ME (Matsuki

Product OverviewThe MS140N30HGB3/C0 H1.06 Maspower is a high-performance N-channel MOSFET designed for power switching applications. It features a VDS of 300V and an ID of 140A, with an ultra-low RDS(on) of less than 32m at VGS=10V due to its high-density cell design. This product offers low gate charge and improved dv/dt capability, making it suitable for isolated DC/DC converters in Telecom and Industrial sectors, as well as synchronous rectification in DC/DC converters. It

Product Overview The LPB3407LT1G and S-LPB3407LT1G are 30V P-Channel Enhancement-Mode MOSFETs designed for load switch and PWM applications. Leveraging advanced trench technology, these devices offer low on-state resistance (RDS(ON)) at various gate-source voltages (VGS) and drain currents (ID). The S-prefix variants are specifically tailored for automotive and other applications with unique site and control change requirements, meeting AEC-Q101 qualification and PPAP

Product OverviewThe ME3424D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection and a super

Product Overview The LNTA7002NT1G and S-LNTA7002NT1G are small signal MOSFETs designed for power management load switching and level shifting applications. These devices are ideal for portable electronics such as cell phones, media players, digital cameras, PDAs, video games, and handheld computers. Key features include low gate charge for fast switching, a small 1.6 x 1.6 mm footprint, and ESD-protected gates. The S-prefix variant is AEC-Q101 qualified and PPAP capable,

Product OverviewThis N-Channel MOSFET is manufactured using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with an excellent soft body diode. It is designed for power management applications in telecom, industrial automation, motor drives, and uninterruptible power supplies, as well as current switching in DC/DC and AC/DC sub-systems.Product AttributesBrand: MDDOrigin: Shenzhen (implied by company name