Single FETs, MOSFETs
switching power MOSFET MagnaChip Semicon MMP60R360PTH with rugged dv dt and avalanche energy ratings
Product OverviewThe MMP60R360P is a power MOSFET utilizing Magnachip's advanced super junction technology. It offers very low on-resistance and gate charge, leading to significantly higher efficiency through optimized charge coupling technology. These user-friendly devices provide designers with the ...
High Speed P Channel MOSFET LRC LSI1013XT1G with 1.8 Volt Gate Source and PPAP Capable S Prefix Model
Product Overview The LSI1013XT1G and S-LSI1013XT1G are P-Channel 1.8-V (G-S) MOSFETs designed for high-speed switching applications. These devices feature a fast switching speed of 14 ns, high-side switching capability, and Gate to Source ESD protection up to 2000V. They are RoHS compliant and ...
Compact DFN2020-6D package transistor LRC LRC6N33YT1G with epitaxial planar type and RoHS compliance
Product Overview The LRC6N33YT1G is a general-purpose transistor featuring a Power MOSFET. It offers ESD protection up to 1500V and a high current capacity within a compact DFN2020-6D package. Its epitaxial planar type construction and low threshold voltage (0.9V to 1.5V) make it suitable for low ...
High Speed N Channel MOSFET LRC LSI1012XT1G with Continuous Drain Current and Gate Source Protection
Product Overview The LSI1012XT1G and S-LSI1012XT1G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. They feature gate-source ESD protection, low on-resistance (0.7 typical), and a low threshold voltage (0.8V typical) for efficient operation. These devices offer fast ...
High cell density p channel power mosfet MATSUKI ME4425 G providing switching in low voltage circuits
Product OverviewThe ME4425 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as ...
Automotive MOSFET LRC L2N7002KX4T5G featuring switching amplification RoHS compliance and Halogen Free materials
Product Overview The L2N7002KX4T5G and S-L2N7002KX4T5G are small signal MOSFETs designed for automotive and general applications. The S-prefix variant is specifically qualified for automotive use with unique site and control change requirements, meeting AEC-Q101 standards and PPAP capabilities. ...
Power transistor MATSUKI ME15N25F suitable for in notebooks LCD display inverters and load switches
Product OverviewThe ME15N25F is a high-performance N-Channel logic enhancement mode power field effect transistor. Utilizing advanced high cell density DMOS trench technology, it offers extremely low on-state resistance and exceptional DC current capability. This makes it ideal for power management ...
40V 100A N Channel Trench MOSFET Featuring Low On Resistance MagnaChip Semicon MDU04N010VRH Component
Product OverviewThe MDU04N010VRH is a single N-Channel Trench MOSFET from Magnachip Semiconductor, featuring 40V breakdown voltage, 100A continuous drain current, and very low on-resistance (< 1.0m). It utilizes advanced MOSFET technology for high performance in on-state resistance and fast ...
High Speed Switching N Channel MOSFET LRC LSI1012BN3T5G featuring 1.8 Volt Gate Source Voltage rating
Product Overview The LSI1012BN3T5G and S-LSI1012BN3T5G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. They offer a low on-resistance of 0.7 and a low threshold voltage of 0.8V (typ), enabling ease in driving switches and low-voltage operation. With a fast switching ...
Low On Resistance 60V N Channel Enhancement Mode MOSFET LRC LN2308LT1G for Battery Powered Equipment
Product Overview The LN2308LT1G is a 60V N-Channel Enhancement-Mode MOSFET designed for efficient power management. It features an extremely low on-resistance (RDS(ON) 100m@VGS =10V) due to its super high density cell design, offering exceptional on-resistance and maximum DC current capability. This ...
load switch component LRC LP7411DT1WG 60V P Channel MOSFET with trench technology and RoHS compliance
Product Overview The LP7411DT1WG is a 60V P-Channel (D-S) MOSFET designed for various power management applications. It features low RDS(on) with trench technology, low thermal impedance, and fast switching speed, making it suitable for load switches, DC/DC conversion, and motor drives. This device ...
Low On State Resistance LP2301ALT1G P Channel Enhancement Mode MOSFET with 20V Maximum Voltage Rating
Product Overview The LP2301ALT1G and S-LP2301ALT1G are 20V P-Channel Enhancement-Mode MOSFETs designed for power management in notebooks, portable equipment, battery-powered systems, load switches, and DSC applications. These devices offer low on-state resistance and are compliant with RoHS ...
Surface mount n channel mosfet MCC BSS123W TP featuring low r dson and lead free rohs compliant epoxy
Product Overview This product is a high-density N-channel MOSFET designed for extremely low RDS(ON). It features voltage-controlled small-signal switching and comes in a surface mount package. The epoxy meets UL 94V-0 flammability rating and the device is Moisture Sensitivity Level 1. It is also ...
RoHS compliant power MOSFET LRC LN2302LT1G featuring 20V drain to source voltage and low on resistance for power
Product Overview The LN2302LT1G is a 20V N-Channel Enhancement-Mode MOSFET designed for high-density cell applications, offering ultra-low on-resistance and improved shoot-through Figure of Merit (FOM). This device is compliant with RoHS requirements and is Halogen-Free. Key features include a Drain...
PPAP Capable N Channel MOSFET LRC S LN4501SLT1G Designed for Load Switching in Portable Electronics
Product Overview The S-LN4501SLT1G is a 20V N-Channel (D-S) MOSFET designed for load/power switching in portable and computing applications, as well as DC-DC conversion. It features a low voltage gate drive rated at 2.5V and complies with RoHS requirements and Halogen Free. The device is AEC-Q101 ...
N Channel Power MOSFET Featuring High Cell Density DMOS Trench Technology MATSUKI ME4626 for Switching
Product OverviewThe ME4626/ME4626-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
Compact SOP 8 Package MATSUKI MEE4294-G Power MOSFET Designed for AC DC Adapter and PC Power Supplies
Product OverviewThe MEE4294-G is a preliminary N-Channel logic enhancement mode power MOSFET manufactured using high cell density EMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like synchronous rectification in AC/DC adapters or PC ...
Compact SOT 23 Package N Channel Power MOSFET LRC LN4501LT1G with Fast Switching and Low Gate Charge
Product Overview The LN4501LT1G is a N-Channel Power MOSFET designed for load and power switching applications in portable and computing devices. It features leading planar technology for low gate charge and fast switching, a 2.5 V rating for low voltage gate drive, and a SOT-23 surface mount ...
Single N Channel MOSFET LRC LNTK4003M3T5G with halogen free material and low gate voltage threshold
Product Overview This N-Channel, Single MOSFET with Gate ESD Protection is designed for various electronic applications requiring efficient switching and reliable performance. It features a low gate voltage threshold for simplified drive circuit design and low gate charge for fast switching speeds. ...
Low RDSon N Channel MOSFET MCC SI3404HE3 TPA01 with RoHS Compliance and UL 94 V 0 Flammability Rating
Product Overview The SI3404HE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a high-density cell design for extremely low RDS(on), making it ideal for efficient power management. This device is AEC-Q101 Qualified, Halogen Free, and RoHS Compliant, ensuring ...
