Single FETs, MOSFETs
Low Threshold Voltage Power MOSFET LBSS139LT1G with 1500V ESD Protection and AEC Q101 Qualification
Product Overview The LBSS139LT1G and S-LBSS139LT1G are N-Channel Power MOSFETs designed for low voltage applications. These devices feature a low threshold voltage (VGS(th): 0.5V to 1.5V) and ESD protection up to 1500V. The S-prefix variants are qualified for automotive applications requiring unique ...
power MOSFET MASPOWER MS60N20HGT0 featuring 200V drain source voltage and 60A continuous drain current
Product OverviewThe MS60N20HGT0 H1.03 by Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features a high breakdown voltage of 200V and a continuous drain current of 60A, with improved dv/dt capability and fast switching characteristics. This device is ...
Energy P Channel MOSFET LRC LBSS84LT1G suitable for DC DC converters and portable device power circuits
Product Overview LESHAN RADIO COMPANY, LTD. presents the LBSS84LT1G and LBSS84LT3G P-Channel SOT-23 MOSFETs. These miniature surface-mount devices are engineered to reduce power loss and conserve energy, making them ideal for small power management circuitry. Typical applications include DC-DC ...
MATSUKI ME4454 G N Channel DMOS Trench Power Transistor Suitable for Low Voltage High Side Switching
Product OverviewThe ME4454 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook ...
Low Gate Charge Silicon Carbide MOSFET Littelfuse LSIC1MO170T0750 Rated MSL 1 and RoHS Compliant Device
Product OverviewThe LSIC1MO170T0750 is a 1700 V, 750 mOhm N-Channel Silicon Carbide MOSFET designed for high-frequency, high-efficiency applications. It features extremely low gate charge and output capacitance, low gate resistance for enhanced switching performance, and normally-off operation ...
Low On Resistance Complementary N and P Channel MOSFET LRC S LNP2010DT2AG for Automotive Applications
Product Overview The S-LNP2010DT2AG is a complementary N- and P-Channel Enhancement Mode MOSFET designed for automotive and other applications requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable. This device offers low on-resistance characteristics for ...
30V P Channel Enhancement Mode MOSFET LRC LP3475T1G with Low On State Resistance and RoHS Compliance
Product Overview The LP3475T1G is a 30V P-Channel Enhancement-Mode MOSFET designed for various applications. It offers low on-state resistance with RDS(ON) as low as 65m at VGS = -10V and 90m at VGS = -4.5V. This device complies with RoHS requirements and is Halogen Free, ensuring material ...
P Channel logic enhancement MOSFET MATSUKI ME4457 designed to minimize power loss in compact devices
Product OverviewThe ME4457 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as ...
high voltage MOSFET MASPOWER MS2N350HGC0 optimized for capacitor discharge pulse circuits and X-ray generation
Product OverviewThe MS2N350HGC0 H1.02 from Maspower is a high-speed switching power MOSFET designed for demanding high-voltage applications. It features a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, enabling efficient and rapid switching. This MOSFET is ideal ...
SOT 23 Package P Channel MOSFET LRC LP2301BLT1G Featuring Low On Resistance and RoHS Compliant Design
Product Overview The LP2301BLT1G is a P-Channel Enhancement-Mode MOSFET designed for simple drive requirements and features a small package outline in a SOT-23 (TO-236AB) surface mount device. It utilizes advanced trench process technology and a high-density cell design for ultra-low on-resistance. ...
Compact Power MOSFET LRC LP3415ELT1G P Channel Device Featuring Trench Process and Low On Resistance
Product Overview The S-LP3415ELT1G is a P-Channel Enhancement-Mode MOSFET from LESHAN RADIO COMPANY, LTD., designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. Packaged in a small outline SOT-23 (TO-236AB) surface mount device, it is suitable ...
N Channel Depletion Mode FET Littelfuse CPC5602CTR Designed for Power Supply and Data Access Systems
CPC5602 N-Channel Depletion Mode FETThe CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) designed for various applications including telecommunications, security systems, and power supplies. It is particularly suited as a support component for LITELINK Data Access Arrangements ...
Avalanche Rated Power MOSFET Littelfuse IXFA72N30X3 for Robotics and Servo Control Applications
Product OverviewThe IXFA72N30X3 is an N-Channel Enhancement Mode Avalanche Rated X3-Class HiPerFETTM Power MOSFET from IXYS. It features international standard packaging, low RDS(ON) and QG, avalanche rating, and low package inductance, offering high power density, easy mounting, and space savings. ...
N channel Trench MOSFET MagnaChip Semicon MDP1723TH designed for synchronous rectification solutions
Product OverviewThe MDP1723TH is a single N-channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET Technology to deliver high performance in on-state resistance and fast switching. It offers excellent quality and is suitable for synchronous rectification in server and general...
Low voltage N channel MOSFET MATSUKI ME2320D G with ESD protection and compact surface mount package
Product OverviewThe ME2320D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook ...
Low Voltage N Channel MOSFET LRC L2N7002KN3T5G Featuring RoHS Compliance and Halogen Free Material
Product Overview The L2N7002KN3T5G is a N-Channel Small Signal MOSFET from LESHAN RADIO COMPANY, LTD., designed for a variety of low-power applications. This device features ESD protection, low on-resistance (RDS(on)), and comes in a compact SOT883 surface mount package. It is suitable for use in ...
200 mAmps 50 Volts N Channel Power MOSFET SC 88 Package LRC LBSS138DW1T1G for Electronic Applications
Product Overview The LBSS138DW1T1G and S-LBSS138DW1T1G are N-Channel Power MOSFETs designed for low voltage applications, featuring a low threshold voltage (VGS(th): 0.5V to 1.5V). The 'S-' prefix models are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other ...
N Channel Power Trench MOSFET LRC LN7910DT1WG Designed for Low RDSon DC DC Conversion Applications
Product Overview The LN7910DT1WG is an N-Channel Power Trench MOSFET designed for DC-DC conversion applications. It features an advanced package and silicon combination for low RDS(on) and high efficiency. The product complies with RoHS requirements and is Halogen Free. Product Attributes Brand: ...
600V 20A power MOSFET MagnaChip Semicon MMP60R190PTH designed for low switching losses and reduced EMI
Product OverviewThe MMP60R190P is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling and offers designers the advantage of low EMI and ...
power management solution featuring LRC S-LP2309LT1G P Channel 60V MOSFET with low RDS ON resistance
Product Overview The S-LP2309LT1G is a P-Channel 60V (D-S) MOSFET designed for efficient power management in various electronic applications. It features an extremely low RDS(ON) due to its super high-density cell design, offering exceptional on-resistance and maximum DC current capability. This ...
