Single FETs, MOSFETs
Low RDS on N Channel MOSFET LRC S L2N7002SLT1G with Halogen Free Compliance and SOT 23 Package Type
Product Overview The L2N7002SLT1G and S-L2N7002SLT1G are N-Channel Small Signal MOSFETs designed for various electronic applications. They offer low RDS(on), ESD protection, and compliance with RoHS and Halogen Free requirements. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable, ...
Small Signal N Channel MOSFET LRC SRK7002LT1G Offering Fast Switching and ESD Protection up to 2000V
Product Overview The SRK7002LT1G and S-SRK7002LT1G are N-Channel Small Signal MOSFETs designed for efficient power management. These devices offer low on-resistance, fast switching speeds, and low-voltage drive capabilities, making them suitable for easily designed drive circuits. They are also easy ...
Low RDSon P Channel MOSFET LP4435T1G 30V Trench Technology Designed for Load Switches and Motor Drives
Product Overview The LP4435T1G is a P-Channel 30V (D-S) MOSFET featuring low RDS(on) achieved through trench technology, low thermal impedance, and fast switching speeds. It is designed for applications such as load switches, DC/DC conversion, and motor drives. This device is manufactured by Leshan ...
Low RDSon 12V P Channel Enhancement MOSFET LRC LP3218DT1G in Compact DFN 2x2x0.62 Millimeter Package
Product Overview The LP3218DT1G is a 12V P-Channel Enhancement MOSFET designed for space-saving applications. It features an ultra-low RDS(on) and a low-profile DFN 2.0x2.0x0.62 mm package. This device is suitable for applications such as battery switches and high-side load switches. It is a Pb-Free ...
Power Field Effect Transistor MATSUKI ME7114S G N Channel MOSFET for Low Side Switching Circuits
Product OverviewThe ME7114S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
High cell density DMOS trench transistor MATSUKI ME4920 for low voltage battery powered applications
Product OverviewThe ME4920 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power ...
Low Input Capacitance N Channel Transistor LGE BSS138DW for Electronic Applications and Rapid Switching
Product OverviewThe BSS138DW is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for applications requiring ...
N Channel MOSFET MASPOWER MS170N65HGF4 Featuring Fast Intrinsic Diode and High Avalanche Energy for Industrial
Product OverviewThe MS170N65HGF4 H1.02 is an N-Channel power MOSFET from Maspower, featuring low RDS(on), high current handling capability, a fast intrinsic diode, and avalanche rating. It is designed for applications such as DC-DC converters, UPS, AC motor drives, battery chargers, and switched...
N Channel Small Signal MOSFET LRC L2N7002DW1T1G with 1000V ESD Protection and AEC Q101 Qualification
Product Overview The L2N7002DW1T1G and S-L2N7002DW1T1G are N-Channel Small Signal MOSFETs designed for automotive and general applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, featuring RoHS compliance and Halogen-Free ...
Durable N channel MOSFET LGE 2N7002K with low RDS on and voltage controlled switching capability
Product OverviewThis N-channel MOSFET features a high-density cell design for low RDS(on) and acts as a voltage-controlled small signal switch. It is rugged, reliable, and offers high saturation current capability. It also includes ESD protection up to 2KV.Product AttributesBrand: LG SEMIModel: ...
12V P Channel Enhancement Mode MOSFET LRC LP2305DSLT1G with Ultra Low On Resistance and SOT 23 Package
Product Overview The S-LP2305DSLT1G is a 12V P-Channel Enhancement-Mode MOSFET from LESHAN RADIO COMPANY, LTD. Featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance, this surface mount device (SOT-23) offers fully characterized avalanche voltage and ...
Power Switching MOSFET Littelfuse IXFN230N20T Featuring N Channel Avalanche Rated Diode and Low RDSon
Product OverviewThe IXFN230N20T is a GigaMOSTM Power MOSFET from IXYS, featuring N-Channel Enhancement Mode with Avalanche Rated and Fast Intrinsic Diode. It offers high current handling capability, low RDS(on), and is designed for easy mounting and space savings, enabling high power density. This ...
LN2324DT2AG 20V N Channel MOSFET Featuring Trench Technology for Driver Circuits and Power Routing
Product Overview The LN2324DT2AG and S-LN2324DT2AG are 20V N-Channel (D-S) MOSFETs designed for various power applications. They feature low RDS(ON) achieved through trench technology, low thermal impedance, and fast switching speeds. These devices are RoHS compliant and Halogen Free. The S-prefix ...
600V Power MOSFET MagnaChip Semicon MMQ60R078RFTH designed for telecom server power and soft switching applications
Product OverviewThe MMQ60R078RF is a 600V N-channel Power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve very low on-resistance and gate charge. Its low gate charge and ultra-fast body diode enhance turn-off performance, providing excellent efficiency ...
Power MOSFET Littelfuse IXTX200N10L2 Featuring Linear Operation and Forward Bias Safe Operating Area
Product OverviewThe IXTK200N10L2 and IXTX200N10L2 are N-Channel Enhancement Mode Power MOSFETs designed for linear operation. They feature avalanche rating and guaranteed FBSOA (Forward-Bias Safe Operating Area). These MOSFETs offer advantages such as easy mounting, space savings, and high power ...
High Voltage Planar Process NPN MOS MASPOWER MS12N120HJC0 with Ultra Low RDS on and Low Gate Charge
Product OverviewThe MS12N120HJC0 is a Planar Process NPN MOS H1.05 Maspower device designed for high-voltage applications. It features a VDS of 1200V and ID of 12A with an ultra-low RDS(on) of less than 3 at VGS=10V, achieved through a high-density cell design. This device offers low gate charge and ...
Power transistor MagnaChip Semicon MMD60R400RFZRH with continuous drain current rating up to 11 amps
Product OverviewThe MMD60R400RFZ is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve very low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling and offers designers the advantage of low EMI and reduced ...
P Channel Enhancement Mode Power MOSFET IXTH90P10P PolarPTM Device for High Side Switch Applications
IXTT90P10P / IXTH90P10P PolarPTM Power MOSFETs The IXTT90P10P and IXTH90P10P are P-Channel Enhancement Mode PolarPTM Power MOSFETs designed for high-performance applications. These devices feature an international standard package, avalanche rating, fast intrinsic diode, and rugged PolarPTM process, ...
Power management solution LGE LGE2300 with trench processing and lead free rohs compliant features
Product OverviewThe 2300 is designed using trench processing techniques to achieve extremely low on-resistance, fast switching speed, and improved transfer efficiency. These features make it an efficient and reliable device for a variety of DC-DC applications. Key advantages include low on...
Load Switching Voltage Controlled Small Signal Switch Leiditech 2N7002KT for Portable and DC DC Converter
Product Overview The 2N7002KT is a voltage-controlled small signal switch featuring a high-density cell design for low RDS (ON). It offers rugged reliability and high saturation current capability, making it suitable for load switching in portable devices and DC/DC converters. Product Attributes ...
