Single FETs, MOSFETs

quality 20 Volt N Channel MOSFET LGE G2302 Power Transistor Designed for Portable Electronics and Converters factory

20 Volt N Channel MOSFET LGE G2302 Power Transistor Designed for Portable Electronics and Converters

G2302 N-Channel 20-V (D-S) MOSFETThe G2302 is a TrenchFET Power MOSFET designed as a load switch for portable devices and DC/DC converters. It offers efficient power management for various electronic applications.Product AttributesBrand: LGE SemiconductorModel: G2302Channel Type: N-ChannelMarking: ...

quality IXTA120P065T Power MOSFET Featuring Extended FBSOA and Fast Intrinsic Diode for Current Regulation factory

IXTA120P065T Power MOSFET Featuring Extended FBSOA and Fast Intrinsic Diode for Current Regulation

Product OverviewThe IXTA120P065T, IXTP120P065T, and IXTH120P065T are P-Channel Enhancement Mode Power MOSFETs from IXYS, designed for demanding applications. These devices feature an international standard package, avalanche rating, extended FBSOA, fast intrinsic diode, and low RDS(ON) and QG. Their ...

quality Surface Mount Power MOSFET LRC LDN2367T1G Lead Free Device for Load Switching and Power Management factory

Surface Mount Power MOSFET LRC LDN2367T1G Lead Free Device for Load Switching and Power Management

Product Overview The LDN2367T1G and S-LDN2367T1G are N-Channel Enhancement Mode Power MOSFETs designed for applications requiring high power and current handling capability. These devices are RoHS compliant and Halogen Free, with the S- prefix variant qualified for automotive and other demanding ...

quality N channel Power MOSFET MagnaChip Semicon MMF80R290RTH featuring low EMI and reduced switching losses factory

N channel Power MOSFET MagnaChip Semicon MMF80R290RTH featuring low EMI and reduced switching losses

Product OverviewThe MMF80R290R is a high-performance N-channel Power MOSFET utilizing MagnaChip's advanced super junction technology. It offers very low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling technology. This device provides ...

quality Silicon Carbide Power MOSFET LGE LGE3M40120Q 1200V 40m Low On Resistance Fast Switching Device factory

Silicon Carbide Power MOSFET LGE LGE3M40120Q 1200V 40m Low On Resistance Fast Switching Device

Product OverviewThe LGE3M40120Q is a 1200V, 40m Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It features low on-resistance, fast switching speeds with low capacitances, and a fast intrinsic diode with low reverse recovery. Its benefits include higher ...

quality Power MOSFET 20V 4.2A N Channel LGE AO3414 Designed for Switching and DC DC Converters factory

Power MOSFET 20V 4.2A N Channel LGE AO3414 Designed for Switching and DC DC Converters

Product OverviewThe AO3414 is a 20V/4.2A N-Channel Advanced Power MOSFET designed for various switching applications. It features low RDS(on) at VGS=4.5V, 3.3V logic-level control, and is housed in a Pb-free, RoHS compliant SOT23 package. This device is ideal for load switching, DC/DC converters, ...

quality Low RDS ON 20V N Channel Enhancement Mode MOSFET LRC LN108N3T5G Suitable for Load Switches and DSCs factory

Low RDS ON 20V N Channel Enhancement Mode MOSFET LRC LN108N3T5G Suitable for Load Switches and DSCs

Product Overview The LN108N3T5G is a 20V N-Channel Enhancement-Mode MOSFET designed for power management applications. It features a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is compliant with RoHS requiremen...

quality Lewa Micro LWS60110A23 SOT 223 Package P Channel Power MOSFET with Low Gate Charge and ROHS Compliance factory

Lewa Micro LWS60110A23 SOT 223 Package P Channel Power MOSFET with Low Gate Charge and ROHS Compliance

LWS60110A23 LW Silicon P-Channel Power MOSFETThe LWS60110A23 is a Silicon P-Channel Power MOSFET utilizing SGT technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications. The device features fast switching, low gate charge, low RDS...

quality Miniature surface mount P channel MOSFET LGE BSS84 optimized for load switching and power management factory

Miniature surface mount P channel MOSFET LGE BSS84 optimized for load switching and power management

Product OverviewThe BSS84 is a P-CHANNEL MOSFET designed for energy efficiency and high-speed switching. It features a low threshold voltage and a miniature surface mount package, making it ideal for space-constrained applications. This MOSFET is suitable for DC-DC converters, load switching, and ...

quality High Stability N Channel Enhancement Mode MOSFET Leiditech DMTH10H025LPSQ for Motor Control Systems factory

High Stability N Channel Enhancement Mode MOSFET Leiditech DMTH10H025LPSQ for Motor Control Systems

Product Overview The DMTH10H025LPSQ is an N-Channel enhancement mode MOSFET utilizing advanced SGT MOSFET technology. It is engineered to deliver low RDS(on), low gate charge, fast switching speeds, and excellent avalanche characteristics. This device is specifically designed for enhanced ruggedness ...

quality Load switch and PWM application P Channel MOSFET featuring low gate voltage LGE KI2301 with excellent RDS factory

Load switch and PWM application P Channel MOSFET featuring low gate voltage LGE KI2301 with excellent RDS

Product OverviewThe KI2301 is a P-Channel MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It operates with gate voltages as low as 2.5V, making it suitable for load switch and PWM applications. This device offers high power and current handling capability and ...

quality P Channel MOSFET Littelfuse IXTA52P10P suitable for automatic test equipment and high side switching factory

P Channel MOSFET Littelfuse IXTA52P10P suitable for automatic test equipment and high side switching

Product OverviewThe IXTA52P10P, IXTH52P10P, IXTP52P10P, and IXTQ52P10P are P-Channel Enhancement Mode Power MOSFETs featuring the PolarPTM process. These devices are avalanche rated and offer fast intrinsic diodes, dynamic dV/dt rating, and rugged construction. They are designed for high-side ...

quality N Channel Enhancement Mode Avalanche Rated Power MOSFET Littelfuse IXTT36N50P Designed for High Voltage Switching factory

N Channel Enhancement Mode Avalanche Rated Power MOSFET Littelfuse IXTT36N50P Designed for High Voltage Switching

IXYS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated This high-performance N-Channel Enhancement Mode Avalanche Rated Power MOSFET is designed for demanding applications. It features international standard packages, Unclamped Inductive Switching (UIS) rating, and low package ...

quality IXFP80N25X3 Power MOSFET Featuring Low Package Inductance for Switch Mode and Resonant Mode Supplies factory

IXFP80N25X3 Power MOSFET Featuring Low Package Inductance for Switch Mode and Resonant Mode Supplies

IXFP80N25X3, IXFQ80N25X3, IXFH80N25X3 N-Channel Enhancement Mode Power MOSFETsThese X3-Class HiPerFETTM Power MOSFETs are designed for high-density, space-saving applications. They feature international standard packages, low RDS(ON) and QG, avalanche rating, and low package inductance, making them ...

quality Power P Channel MOSFET LRC LP2371LT1G 100 Volt Device with Fast Switching and Halogen Free Material factory

Power P Channel MOSFET LRC LP2371LT1G 100 Volt Device with Fast Switching and Halogen Free Material

Product Overview This P-Channel 100-V (D-S) MOSFET, available under the LP2371LT1G and S-LP2371LT1G models, is designed for efficient power management in various electronic applications. It features low RDS(on) with trench technology, fast switching speeds, and compliance with RoHS and Halogen Free ...

quality IXTH102N15T Power MOSFET N Channel Trench Gate Avalanche Rated Device for Switching in TO 247 Package factory

IXTH102N15T Power MOSFET N Channel Trench Gate Avalanche Rated Device for Switching in TO 247 Package

Product OverviewThe IXTA102N15T, IXTH102N15T, IXTP102N15T, and IXTQ102N15T are Trench Gate Power MOSFETs designed for high-speed power switching applications. These N-Channel Enhancement Mode devices are avalanche rated and offer features such as international standard packages, easy mounting, space ...

quality P Channel Power MOSFET Load Switch PWM Applications Featuring Leiditech NVTR4502P with Low Gate Charge factory

P Channel Power MOSFET Load Switch PWM Applications Featuring Leiditech NVTR4502P with Low Gate Charge

Product Overview The NVTR4502P is a P-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON), low gate charge, and efficient operation with gate voltages as low as 2.5V. This device is ideally suited for use as a load switch or in Pulse Width Modulation (PWM) ...

quality N Channel MOSFET LRC LN2302BLT1G Featuring Low RDS ON for in Power Management and Portable Equipment factory

N Channel MOSFET LRC LN2302BLT1G Featuring Low RDS ON for in Power Management and Portable Equipment

Product Overview The S-LN2302BLT1G and LN2302BLT1G are N-Channel Enhancement-Mode MOSFETs from Leshan Radio Company, Ltd., designed for power management applications. These devices feature a super high-density cell design for extremely low RDS(ON), offering exceptional on-resistance and maximum DC ...

quality High Speed Power MOSFET Littelfuse IXFK20N120P Featuring Low Gate Charge and Avalanche Energy Rating factory

High Speed Power MOSFET Littelfuse IXFK20N120P Featuring Low Gate Charge and Avalanche Energy Rating

Product OverviewThe IXFK20N120P and IXFX20N120P are N-Channel Enhancement Mode PolarTM HiPerFETTM Power MOSFETs featuring fast intrinsic diodes, dynamic dv/dt rating, avalanche rating, low RDS(ON) and QG, and low package inductance. These MOSFETs offer high power density, are easy to mount, and ...

quality Leiditech SQ2308CES 60V N Channel Enhancement Mode MOSFET Suitable for Load Switches and UPS Systems factory

Leiditech SQ2308CES 60V N Channel Enhancement Mode MOSFET Suitable for Load Switches and UPS Systems

Product Overview The SQ2308CES is a 60V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications. Key ...