Single FETs, MOSFETs
High current MOSFET MASPOWER MS290N10HDC0 designed for industrial power supplies and load switching
Product OverviewThe MS290N10HDC0 H1.03 from Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features a VDS of 100V and a continuous ID of 290A, with low Crss and low gate charge, making it suitable for secondary synchronous rectification, load switching, ...
Compact P Channel MOSFET MATSUKI ME2323D with Low Gate Leakage Current and High Switching Performance
Product OverviewThe ME2323D(-G) is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well ...
Industrial N Channel Trench MOSFET MagnaChip Semicon MDES14N045RH with Low Rds on and Fast Switching
Product OverviewThe MDES14N045RH is Magnachip's latest generation of MV MOSFET Technology, offering high performance with the lowest Rds(on), fast switching capabilities, and excellent quality. This single N-channel trench MOSFET is designed for industrial applications including low power drives for ...
High voltage MOSFET MASPOWER MS50N85IDC0 designed for continuous and pulsed drain current operation
Product OverviewThe MS50N85IDC0 H1.02 Maspower is a high-performance power semiconductor designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitance, and very low on-resistance, making it ideal for use ...
Low On State Resistance P Channel MOSFET LGE G2301S Suitable for General Switching Circuits
Product OverviewThe G2301S is a P-Channel Advanced Power MOSFET designed for high-side load switching and general switching circuit applications. It offers low On-State Resistance (RDS(on)) at various gate-source voltages, including -3.3V logic level control, and comes in a Pb-free, RoHS compliant ...
LRC L2N7002SDW1T1G MOSFET N Channel Device with Automotive Grade S Prefix and Halogen Free Materials
Product Overview The L2N7002SDW1T1G and S-L2N7002SDW1T1G are N-Channel Small Signal MOSFETs designed for various electronic applications. These devices are RoHS compliant and Halogen Free, ensuring environmental responsibility. The S-prefix variant is specifically qualified for automotive and other ...
Power Management and Signal Switching LGE BSS138W N Channel Logic Level Enhancement Mode Transistor
Product OverviewThe BSS138W is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers key advantages such as low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for ...
Low RDS ON 20V P Channel MOSFET LRC LP2501DT1G designed for power management in DSC and load switch devices
Product Overview The LESHAN RADIO COMPANY, LTD. LP2501DT1G is a 20V P-Channel Enhancement-Mode MOSFET designed for power management applications. It features a super high density cell design for extremely low RDS(ON), making it suitable for notebook power management, portable equipment, battery...
50V 0.2A N Channel MOSFET LGE BSS139 with Pb Free RoHS Compliance and ESD Protection up to 2000V
Product OverviewThe BSS139 is a 50V/0.2A N-Channel Advanced Power MOSFET designed for various applications including LED lighting, ON/OFF switching, and networking. It features low RDS(on) at VGS=10V, 3.3V logic level control, and ESD protection up to 2000V. This device is Pb-Free and RoHS Compliant...
Robust MOS Power Transistor MASPOWER MS5N100FD Planar Process 1000V N Channel for Switching Circuits
Product OverviewThe MS5N100/S/FT/FE/FD is a Planar Process N-channel 1000V MOS power transistor. It offers extremely high dv/dt capability, is 100% avalanche tested, and features minimized gate charge and very low intrinsic capacitances, ensuring good manufacturing repeatability. This device is ...
Depletion Mode MOSFET N Channel Littelfuse IXTH16N20D2 for High Power Density and Circuit Protection
IXTT16N20D2 / IXTH16N20D2 Depletion Mode MOSFET N-ChannelThis N-Channel Depletion Mode MOSFET offers a "Normally ON" mode, making it suitable for various applications requiring easy mounting, space savings, and high power density. It is designed for use in audio amplifiers, start-up circuits, ...
Low On Resistance N Channel 30V MOSFET LRC LN3406DT2AG Designed for DC DC Converters and Automotive
Product Overview The LN3406DT2AG is an N-Channel 30V (D-S) MOSFET featuring low RDS(on) trench technology, fast switching speed, and low thermal impedance. It is designed for applications such as white LED boost converters and DC-DC converters, making it suitable for automotive systems. This device ...
switching MOSFET MagnaChip Semicon MDF13N65BTH suitable for in power factor correction and SMPS applications
Product OverviewThe MDF13N65B is an N-channel MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET technology to deliver low on-state resistance, high switching performance, and excellent quality. This device is well-suited for applications requiring high-speed switching and general...
N Channel Silicon Carbide MOSFET 1700 Volt 750 Milliohm Littelfuse LSIC1MO170E0750 for Power Control
Product Overview The LSIC1MO170E0750 is a 1700 V, 750 mOhm N-Channel Silicon Carbide MOSFET optimized for high-frequency, high-efficiency applications. It features extremely low gate charge and output capacitance, low gate resistance for high-frequency switching, and normally-off operation at all ...
30V P Channel MOSFET LRC LP3401LT1G Featuring Advanced Trench Technology and Ultra Low On Resistance
Product Overview The LP3401LT1G is a 30V P-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This device is compliant with RoHS requirements and Halogen Free. It is designed for various applications requiring ...
low RDSON MOSFET LRC LN2302ALT1G designed for highdensity cell applications and portable electronics
Product Overview The LN2302ALT1G and S-LN2302ALT1G are 20V N-Channel Enhancement-Mode MOSFETs designed for high-density cell applications, offering extremely low RDS(ON) and exceptional on-resistance with high DC current capability. These devices comply with RoHS requirements and are Halogen Free. ...
Power Field Effect Transistor MATSUKI ME50N06A G Featuring High Cell Density DMOS Trench Technology
Product OverviewThe ME50N06A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as LCD inverters, computer power management, and ...
power transistor MATSUKI ME4565 featuring N channel and P channel devices for surface mount power solutions
Product OverviewThe ME4565 is an N- and P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making these devices ideal for low-voltage applications such as power management in ...
Silicon Carbide MOSFET LGE LGE3M30065Q for Enhanced System Efficiency and Thermal Runaway Protection
Product OverviewThe LGE3M30065Q is a Silicon Carbide Power MOSFET designed for high-efficiency and high-reliability applications. It offers advantages such as higher system efficiency, convenience for parallel device configurations without thermal runaway, suitability for high-temperature applicatio...
LRC L2N7002KN3T5G OP N Channel Small Signal MOSFET with RoHS Compliance and Halogen Free Material
Product Overview The L2N7002KN3T5G and S-L2N7002KN3T5G are N-Channel Small Signal MOSFETs designed for various electronic applications. These devices are RoHS compliant and Halogen Free, with the 'S-' prefix variant offering AEC-Q101 qualification and PPAP capability for automotive and other ...
