Single FETs, MOSFETs
40V 100A N Channel MOSFET HUASHUO HSBA4048 Ideal for Synchronous Rectification and Power Conversion
Product Overview The HSBA4048 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 40V drain-source voltage and a continuous drain current of up to 100A, this MOSFET is built with advanced trench technology, offering low gate charge and high current capability. ...
High Current Power MOSFET HUAYI HYG025N06LS2B with 60 Volt Drain Source Voltage and Low On Resistance
Product OverviewThe HYG025N06LS2P/B is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and is available in lead-free (RoHS Compliant) versions. This MOSFET is ideal ...
Power switching n channel enhancement mode mosfet HUAYI HYG028N10NS1P with 100 volt 230 amp capability
HYG028N10NS1/B N-Channel Enhancement Mode MOSFET The HYG028N10NS1/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages such as 100V/230A capability, low on-resistance (RDS(ON)=2.6m typ. @ VGS ...
Power Management MOSFET HUAYI HY3008B Featuring Low On State Resistance and 80V High Breakdown Voltage
Product OverviewThe HY3008 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high breakdown voltage of 80V and a continuous drain current of 100A, with a low on-state resistance of 6.6m (typ.) at VGS = 10V. This device ...
power MOSFET HUAYI HYG072N08NR1P designed for inverter systems electric vehicle controllers and lithium battery protection
Product OverviewThe HYG1N15P3 is a single channel enhancement mode MOSFET designed for various power management applications. It offers high reliability, ruggedness, and is available in lead-free devices. This MOSFET is compliant with RoHS standards and is suitable for use in inverter systems, ...
power switching P channel MOSFET HUASHUO HSS2301C with trench technology and low gate charge design
Product Overview The HSS2301C is a P-channel, 20V fast switching MOSFET utilizing high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
Low Gate Charge Dual N P Channel MOSFET Device HXY MOSFET HXY4612S for Switching and Battery Protection
Product OverviewThe HXY4612S is a Dual N+P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, ...
200V N Channel SGT MOSFET H18N20D with Lead Free Construction and Enhanced Switching Performance
H18N20D 200V SGT N-Channel MOSFETThe H18N20D is a 200V N-Channel SGT MOSFET designed for high-speed switching applications. It features fast switching speed, 100% avalanche tested, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous ...
Power Management N Channel Enhancement Mode MOSFET HUAYI HY3410P with 100A Continuous Drain Current
HY3410 N-Channel Enhancement Mode MOSFET The HY3410 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low on-state resistance (RDS(ON) = 6.2 m typ. @ VGS=10V) and a continuous drain current of 100A. ...
P Channel Enhancement Mode MOSFET HUAYI HYG400P10LR1B with 100V Drain Source Voltage and 40A Current
Product OverviewThe HYG400P10LR1P/B is a P-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a -100V drain-source voltage and -40A continuous drain current, with low on-state resistance (RDS(ON) = 42m typ. @ VGS = -10V). This MOSFET is 100% avalanche tested and ...
Power Management MOSFET HUAYI HY1310D Featuring Low RDS ON and Robust Avalanche Rating for Industrial
Product OverviewThe HY1310D/U/V is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers reliable and rugged performance with features like avalanche rating and low RDS(ON). Available in lead-free and green (RoHS compliant) options.Product AttributesBrand: ...
SiC Power MOSFET N Channel Enhancement Mode HXY MOSFET UJ3C065030T3S HXY for Industrial Power Systems
SiC Power MOSFET N-Channel Enhancement ModeThe HUAXUANYANG HXY SiC Power MOSFET is an N-Channel Enhancement Mode device designed for high-performance power applications. Leveraging Wide bandgap SiC MOSFET technology, it offers reduced switching losses, increased system switching frequency, and ...
Fast Switching N Channel MOSFET HUASHUO HSP15810C Featuring Trench Technology for High Frequency Switching Circuits
Product Overview HSP15810C is a N-Channel, 100V Fast Switching MOSFET designed for high-frequency switching applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS Guaranteed performance. This MOSFET is ideal for applications such as motor ...
Fast Switching N Channel MOSFET HSM4062 Featuring Low Gate Charge and Guaranteed EAS Performance
Product Overview The HSM4062 is a N-Channel Fast Switching MOSFET designed for efficient power management. Featuring advanced Trench MOS technology, it offers low gate charge and guaranteed 100% EAS performance. This device is ideal for applications such as power management functions, DC-DC ...
Low drain source ON resistance N Channel MOSFET HUASHUO HSBE2738 with RoHS and Green Product approval
Product Overview The HSBE2738 is a low RDS(ON) trenched N-Channel MOSFET with robust ESD protection, designed for fast switching applications. This product is particularly suitable for Lithium-ion battery pack applications and meets RoHS and Green Product requirements with full function reliability ...
Power Management and Switching MOSFET HUAYI HY4903P N Channel Enhancement Mode with Avalanche Tested
Product OverviewThe HY4903P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features low on-resistance, 100% avalanche tested, and excellent CdV/dt effect decline, making it suitable for high-efficiency power solutions. ...
P Channel Enhancement Mode MOSFET HUAYI HYG065P03LQ1D with low on resistance and high current rating
Product OverviewThe HYG065P03LQ1 is a P-Channel Enhancement Mode MOSFET featuring low on-resistance and high current capabilities. It is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions. This MOSFET is designed for power management applicatio...
Single N Channel Enhancement Mode MOSFET HUAYI HYG020N06LS1P with Lead Free and Halogen Free Package
Product OverviewThe HYG020N06LS1P is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-resistance (RDS(ON)=2m typ. @ VGS = 10V), 100% avalanche tested, and offers a reliable and rugged design. This device is available in lead...
HXY MOSFET IMZA120R014M1HXKSA1-HXY SiC Power MOSFET with High Blocking Voltage and Low On Resistance
Product OverviewThe HUAXUANYANG HXY ELECTRONICS CO.,LTD SiC Power MOSFET, model IMZA120R014M1HXKSA1, is an N-Channel Enhancement Mode device designed for high-performance power applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitance, and is ...
20V P channel MOSFET HUASHUO HSS2305A featuring trench technology and low gate charge for power conversion
Product Overview The HSS2305A is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has ...
