Single FETs, MOSFETs
Power Management N Channel MOSFET HUAYI HYG420N06LR1D 60 Volt 22 Amp Low RDS ON for DC DC Conversion
HYG420N06LR1D/U/V N-Channel Enhancement Mode MOSFETThe HYG420N06LR1D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for power management applications, including DC/DC conversion and synchronous rectification. It offers a 60V/22A rating with low on-resistance of 35m (typ.) at ...
Fast Switching N Channel and P Channel MOSFETs HUASHUO HSSK8402 Featuring Ultra Low On Resistance for Load Switch
Product Overview The HSSK8402 is a series of N-Channel and P-Channel Fast Switching MOSFETs designed with advanced trench technology. This technology ensures excellent RDS(ON) and low gate charge, making it suitable for ultra-low on-resistance applications. The HSSK8402 is ideal for use as a load ...
N Channel MOSFET HUASHUO HSS4002 40V Fast Switching Trench Technology Device Suitable for Load Switch
Product Overview The HSS4002 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. The HSS4002 meets RoHS and Green Product requirements, ...
Green device compliant P channel MOSFET HUASHUO HSP120P03 with fast switching and low on resistance
Product Overview The HSP120P03 is a P-channel MOSFET featuring a 30V breakdown voltage and fast switching capabilities. Designed with high cell density trench technology, it offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets ...
High Current MOSFET HUAYI HY5110NA2W with Low On State Resistance and Lead Free Green Device Options
Product OverviewThe HY5110NA2W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 100V and a continuous drain current of 295A, with a low on-state resistance of 2.4m (typ.) at VGS = 10V. This device is 100% avalanche tested, ...
rugged N Channel Enhancement Mode MOSFET HUAYI HYG025N06LS2P ideal for synchronous buck converters
HYG025N06LS2P/B N-Channel Enhancement Mode MOSFET The HYG025N06LS2P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It features low on-resistance (RDS(ON)) of 2.7 m (typ.) at VGS = 10V and 3.8 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a ...
Power Management N Channel MOSFET HUAYI HYG032N08NS1B6 with RoHS Compliant Halogen Free Green Material
Product OverviewThe HYG032N08NS1B6 is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a low on-resistance of 2.5 m (typ.) at VGS=10V, 100% avalanche tested, and a reliable, rugged construction. This device is available in halogen-free and green (RoHS ...
HXY MOSFET HXY3407AI P Channel MOSFET Offering Low Gate Threshold and Excellent Switching Performance
Product OverviewThe HXY3407AI is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching ...
High current n channel mosfet HUASHUO HSP3018B with excellent gate charge and rds on characteristics
Product Overview The HSP3018B is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function ...
Load Switch Applications with HXY MOSFET AO3401 ED P Channel Device Offering Low Gate Charge and RDS
Product OverviewThe AO3401-ED is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 1.8V. This device is ideal for load switch and PWM applications.Product AttributesBrand: HUAXUANYANG ...
HSK4101 P channel MOSFET featuring trench technology and fast switching for power management devices
Product Overview The HSK4101 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements ...
N Channel MOSFET HUAYI HY1906B 60 Volt 120 Amp Power Management Component for Industrial Electronics
Product Overview The HY1906P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 60V/120A rating and low on-resistance (RDS(ON) = 6.0 m typ. @ VGS=10V). This device is avalanche rated, reliable, rugged, and available in lead...
N Channel Enhancement Mode MOSFET HUAYI HYG080N10LS1P 100V 90A Low On Resistance for Power Systems
Product OverviewThe HYG080N10LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a 100V/90A rating with low on-state resistance (RDS(ON) = 8m typ. @ VGS = 10V). This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen...
Power MOSFET HUAYI HY3906W N Channel 60V 190A Low RDS ON for Switching and Power Applications
Product OverviewThe HY3906W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers reliable and rugged performance with key features like 60V/190A ratings and low RDS(ON) of 3.5 m (typ.) at VGS=10V. This device is available ...
Fast switching P channel MOSFET HUASHUO HSH120P03 30V trench technology low RDS ON for power circuits
Product Overview The HSH120P03 is a P-channel 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS ...
Trench technology N channel MOSFET HUASHUO HSP18N20 providing and low gate charge in power circuits
Product Overview The HSP18N20 is a high-performance N-channel MOSFET featuring an extreme high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requiremen...
Fast switching N channel MOSFET HUASHUO HSS3N06 with advanced trench technology and low gate charge
Product Overview The HSS3N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and ...
N Channel Enhancement Mode MOSFET HUAYI HYG043N10NS2B with 100V 164A rating and low on state resistance
HYG043N10NS2P/B N-Channel Enhancement Mode MOSFETThe HYG043N10NS2P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It features a low on-state resistance of 3.5 m (typ.) at VGS = 10V, 100V/164A rating, and 100% avalanche tested for reliability. This ...
N Channel Enhancement Mode MOSFET HUAYI HY3712B 125V 170A Rating and Low RDS ON for Inverter Systems
Product OverviewThe HY3712 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 125V/170A rating and a low RDS(ON) of 6.3 m (typ.) at VGS=10V. This device is reliable, rugged, and available in Lead ...
N Channel Enhancement Mode MOSFET HUAYI HY3906B with 60 Volt 190 Amp Power Management Rating
Product OverviewThe HY3906P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 60V/190A rating and low on-resistance (RDS(ON) = 4.0m typ. @ VGS=10V). This device is reliable, rugged, and available in lead-free and green ...
